22 kV, 1 cm<sup>2</sup>, 4H-SiC n-IGBTs with improved conductivity modulation

Brunt, Edward Van; Cheng, Lin; O’Loughlin, Michael J.; Capell, Craig; Jonas, Charlotte; Lam, Khiem; Richmond, Jim; Pala, Vipindas; Ryu, Sei‐Hyung; Allen, Scott T.; Burk, Albert A.; Palmour, John W.; Scozzie, Charles

doi:10.1109/ispsd.2014.6856050

Cited by 70 publications

(39 citation statements)

References 4 publications

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“…Since the Bevel-JTE is fabricated with a dicing blade, it can be simply applied to any vertical device in SiC that has a drift layer of different thickness by adjusting the dicing depth. In fact, it is more attractive to use the Bevel-JTE structure for higher voltage devices because a significantly large area of the wafer is occupied by edge termination structures using the conventional approaches [12].…”

Section: Resultsmentioning

confidence: 99%

Bevel Junction Termination Extension—A New Edge Termination Technique for 4H-SiC High-Voltage Devices

Sung

Huang

Baliga

2015

IEEE Electron Device Lett.

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A new edge termination method, referred to as a bevel junction termination extension (Bevel-JTE), is presented for high-voltage silicon carbide devices. The 4H-SiC PiN rectifiers, with a breakdown voltage of 1600 V (∼95% of the theoretical value), were fabricated using Bevel-JTEs. The Bevel-JTE technique significantly reduces the chip size by decreasing space occupied by edge termination while providing broad process latitude for parameter variations, such as implantation dose and activation anneal condition.

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Section: Resultsmentioning

confidence: 99%

Bevel Junction Termination Extension—A New Edge Termination Technique for 4H-SiC High-Voltage Devices

Sung

Huang

Baliga

2015

IEEE Electron Device Lett.

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“…In recent years, ultrahigh-voltage SiC pin diodes [11][12][13], thyristors [14], bipolar junction transistors [15], and insulated-gate bipolar transistors (IGBTs) [16][17][18] have been reported. Using 10 kV SiC MOSFETs or 15 kV SiC IGBTs, several power converters such as boost converters and modular-leg converters have been fabricated, demonstrating good power efficiencies [19][20][21][22].…”

Section: Of 15mentioning

confidence: 99%

Promise and Challenges of High-Voltage SiC Bipolar Power Devices

et al. 2016

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Although various silicon carbide (SiC) power devices with very high blocking voltages over 10 kV have been demonstrated, basic issues associated with the device operation are still not well understood. In this paper, the promise and limitations of high-voltage SiC bipolar devices are presented, taking account of the injection-level dependence of carrier lifetimes. It is shown that the major limitation of SiC bipolar devices originates from band-to-band recombination, which becomes significant at a high-injection level. A trial of unipolar/bipolar hybrid operation to reduce power loss is introduced, and an 11 kV SiC hybrid (merged pin-Schottky) diodes is experimentally demonstrated. The fabricated diodes with an epitaxial anode exhibit much better forward characteristics than diodes with an implanted anode. The temperature dependence of forward characteristics is discussed.

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“…To achieve high breakdown voltages (BV) for the planar junction close to its theoretical voltage, using a proper edge termination structures is essential. In the past few decades, a large number of edge termination structures have been investigated and applied in SiC power devices, including field plate (FP) [6,7], floating field rings (FFRs) [8,9,10], and junction termination extension (JTE) [11,12,13]. FP is easy to design and fabricate, but introduces electric field (EF) peaks at the end, which limits their application to high-voltage devices.…”

Section: Introductionmentioning

confidence: 99%

Step-Double-Zone-JTE for SiC Devices with Increased Tolerance to JTE Dose and Surface Charges

et al. 2018

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In this paper, an edge termination structure, referred to as step-double-zone junction termination extension (Step-DZ-JTE), is proposed. Step-DZ-JTE further improves the distribution of the electric field (EF) by its own step shape. Step-DZ-JTE and other termination structures are investigated for comparison using numerical simulations. Step-DZ-JTE greatly reduces the sensitivity of breakdown voltage (BV) and surface charges (SC). For a 30-μm thick epi-layer, the optimized Step-DZ-JTE shows 90% of the theoretical BV with a wide tolerance of 12.2 × 1012 cm−2 to the JTE dose and 85% of the theoretical BV with an improved tolerance of 3.7 × 1012 cm−2 to the positive SC are obtained. Furthermore, when combined with the field plate technique, the performance of the Step-DZ-JTE is further improved.

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22 kV, 1 cm², 4H-SiC n-IGBTs with improved conductivity modulation

Cited by 70 publications

References 4 publications

Bevel Junction Termination Extension—A New Edge Termination Technique for 4H-SiC High-Voltage Devices

Bevel Junction Termination Extension—A New Edge Termination Technique for 4H-SiC High-Voltage Devices

Promise and Challenges of High-Voltage SiC Bipolar Power Devices

Step-Double-Zone-JTE for SiC Devices with Increased Tolerance to JTE Dose and Surface Charges

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22 kV, 1 cm2, 4H-SiC n-IGBTs with improved conductivity modulation

Cited by 70 publications

References 4 publications

Bevel Junction Termination Extension—A New Edge Termination Technique for 4H-SiC High-Voltage Devices

Bevel Junction Termination Extension—A New Edge Termination Technique for 4H-SiC High-Voltage Devices

Promise and Challenges of High-Voltage SiC Bipolar Power Devices

Step-Double-Zone-JTE for SiC Devices with Increased Tolerance to JTE Dose and Surface Charges

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Product

Resources

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22 kV, 1 cm², 4H-SiC n-IGBTs with improved conductivity modulation