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Tang, Thomas Li‐Ping; Tang, David Shin‐Hsiung; Tang, Cindy.

doi:10.1023/a:1003990230121

Cited by 28 publications

(20 citation statements)

References 24 publications

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“…3 Rather, it is the size of school and its gross operating budget that determines administrator compensation. This contrasts with the US findings reported in Tang et al (2000). Though they find that overall size is the most important determinant of university presidents' compensation, they also show that schools with greater resources per student paid their presidents more.…”

Section: Cross-university Cross-position Patternscontrasting

confidence: 83%

“…As noted above, there are US analyses of university administrators' salaries. Tang et al (2000), for example, undertake a cross-sectional analysis of salaries of US university administrators. They find that salaries of presidents of private colleges and universities depend on the type of institution, presence of professional schools, academic reputation ranking and university expenditures.…”

Section: Introductionmentioning

confidence: 99%

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Silent escalation: salaries of senior university administrators in Ontario, 1996–2006

Essaji

Horton

2009

High Educ

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The real compensation of senior university administrators in Ontario has increased by over 43% in the last decade. The escalation is especially pronounced for presidents and provosts: their pay has risen by 63% in real terms between 1996 and 2006. These trends have been evident in universities of all types, for both genders and for professional as well as non-professional faculties. Besides documenting this hitherto unnoticed phenomenon, we explore the determinants of this escalation. Increased university size, and the consequent complication of administrators' duties undoubtedly plays some role in the increase, though it likely does not explain all of it. Increased competition in the market for senior administrators may be contributing to the escalation, as may heightened rent-seeking behaviour.

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Section: Cross-university Cross-position Patternscontrasting

confidence: 83%

Section: Introductionmentioning

confidence: 99%

Silent escalation: salaries of senior university administrators in Ontario, 1996–2006

Essaji

Horton

2009

High Educ

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“…Implemented in a 40nm conventional CMOS process (f max = 0.35THz), the array uses a combination of superregenerative amplification and heterodyning to permit reception at 0.5THz (roughly double f t ). [12] The performance of the array is evident in these images of a teddy bear (original at left, below), taken at three frequencies (53GHz, 201GHz,, and 249GHz). The minimum requirement for a superregenerative amplifier to function is the ability to oscillate.…”

Section: Technology Status and Trendsmentioning

confidence: 99%

“…An excellent modern exploitation of the superregenerative principle is the THz imaging array described in [12]. Implemented in a 40nm conventional CMOS process (f max = 0.35THz), the array uses a combination of superregenerative amplification and heterodyning to permit reception at 0.5THz (roughly double f t ).…”

Section: Technology Status and Trendsmentioning

confidence: 99%

Terahertz electronics: The last frontier

Lee¹

2014

2014 44th European Solid State Device Research Conference (ESSDERC)

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The terahertz gap is a roughly decade-wide spectral band geometrically centered at 1THz, for which neither conventional electronics nor room-temperature photonics is particularly well suited. This paper reviews applications that reside in the gap, mapped against the capabilities of various technologies. Lithographic scaling will deliver devices with adequate small-signal performance in the THz band, but the lack of efficient, high-power (watt-level) sources remains a significant impediment to further progress. The paper concludes with an enumeration of work still to be done, and some suggestions for how it might be done, including a recommendation not to overlook appropriately reconceived vacuum electronic devices.

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“…For example, terahertz-capable transistors would allow negative feedback to confer significant improvements in the linearity and bandwidth of functional blocks operating at lower frequencies. [9] Considerable investment continues to sustain lithographic scaling, with direct benefits to conventional silicon CMOS technology. To a first approximation, maximum CMOS ft is given by:…”

mentioning

confidence: 99%

Terahertz CMOS integrated circuits

Lee

2014

2014 IEEE International Symposium on Radio-Frequency Integration Technology

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Advances in circuit techniques, aided by continued lithographic scaling, will deliver CMOS technology capable of operation in the submillimeter-wave bands. Many building blocks operating at near-THz frequencies in silicon-based technologies (SiGe and CMOS) have appeared in the recent literature. Although many significant challenges remain, these results suggest that CMOS THz ICs are an inevitability. Applications that reside in the "terahertz gap," mapped against the projected capabilities of CMOS, provide a context for identifying the most important remaining problems. The lack of efficient, high-power (watt-level) sources remains the most conspicuous impediment to further progress. The talk concludes with an examination of the potential of vacuum electronic devices to solve the transmit power problem.

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Untitled

Cited by 28 publications

References 24 publications

Silent escalation: salaries of senior university administrators in Ontario, 1996–2006

Silent escalation: salaries of senior university administrators in Ontario, 1996–2006

Terahertz electronics: The last frontier

Terahertz CMOS integrated circuits

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