2014 44th European Solid State Device Research Conference (ESSDERC) 2014
DOI: 10.1109/essderc.2014.6948750
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Terahertz electronics: The last frontier

Abstract: The terahertz gap is a roughly decade-wide spectral band geometrically centered at 1THz, for which neither conventional electronics nor room-temperature photonics is particularly well suited. This paper reviews applications that reside in the gap, mapped against the capabilities of various technologies. Lithographic scaling will deliver devices with adequate small-signal performance in the THz band, but the lack of efficient, high-power (watt-level) sources remains a significant impediment to further progress.… Show more

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Cited by 6 publications
(2 citation statements)
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References 15 publications
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“…Recently, the chip-to-chip wireless communication using on-chip antennas shows the potential to overcome the limitations of broad-band wireline signal transmission. Meanwhile, terahertz science and technologies have attracted attention due to the huge bandwidth of THz waves and its potential for use Manuscript in extra ordinary applications such as non-harmful biomedical imaging, radar, spectroscopy as well as high-rate short-range wireless communication [1]- [11]. Compound semiconductors such as InP is the first choice of today's THzICs.…”
Section: Introductionmentioning
confidence: 99%
“…Recently, the chip-to-chip wireless communication using on-chip antennas shows the potential to overcome the limitations of broad-band wireline signal transmission. Meanwhile, terahertz science and technologies have attracted attention due to the huge bandwidth of THz waves and its potential for use Manuscript in extra ordinary applications such as non-harmful biomedical imaging, radar, spectroscopy as well as high-rate short-range wireless communication [1]- [11]. Compound semiconductors such as InP is the first choice of today's THzICs.…”
Section: Introductionmentioning
confidence: 99%
“…However, since the distance between the floating gate and the border trap-sites is too large for electrons to be tunneled directly and the energy level of trap sites is too deep to be thermally excited at PV1 and ERS states, trapped electrons are rarely tunneled out to the floating gate during the bake time unlike the electrons contributing to detrapping mechanism. 30) Figure 3 shows the charge behavior (loss or gain) at PV1 and ERS states in 5K cycled NAND flash main-chip according to the bake time. It is observed that N it recovery and detrapping mechanisms are served as the charge loss.…”
Section: Resultsmentioning
confidence: 99%