24.7% Record Efficiency HIT Solar Cell on Thin Silicon Wafer

Taguchi, Mikio; Yano, Ayumu; Tohoda, Satoshi; Matsuyama, K.; Nakamura, Yuya; Nishiwaki, Takeshi; Fujita, Kazunori; Maruyama, Eiji

doi:10.1109/jphotov.2013.2282737

Cited by 1,020 publications

(585 citation statements)

References 6 publications

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“…This result is in fact comparable to the 23% efficiency exhibited by HIT cells made on silicon wafers with a 200 m thickness [8]. Recently, a HIT device exhibiting a record efficiency of 24.7% and manufactured with a silicon wafer of industrial size and a thickness of 98 m has been reported [9]. Based on these successful results, the interest to investigate more in the preparation of more efficient HJ solar cells is obvious.…”

Section: Introductionsupporting

confidence: 57%

Laser Induced Forward Transfer for front contact improvement in silicon heterojunction solar cells

Colina

Morales-Vilches

Voz

et al. 2015

Applied Surface Science

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a b s t r a c tIn this work the Laser Induced Forward Transfer (LIFT) technique is investigated to create n-doped regions on p-type c-Si substrates. The precursor source of LIFT consisted in a phosphorous-doped hydrogenated amorphous silicon layer grown by Plasma Enhanced Chemical Vapor Deposition (PECVD) onto a transparent substrate. Transfer of the doping atoms occurs when a sequence of laser pulses impinging onto the doped layer propels the material toward the substrate. The laser irradiation not only transfers the doping material but also produces a local heating that promotes its diffusion into the substrate. The laser employed was a 1064 nm, lamp-pumped system, working at pulse durations of 100 and 400 ns. In order to obtain a good electrical performance a comprehensive optimization of the applied laser fluency and number of pulses was carried out. Subsequently, arrays of n + p local junctions were created by LIFT and the resulting J-V curves demonstrated the formation of good quality n+ regions. These structures were finally incorporated to enhance the front contact in conventional silicon heterojunction solar cells leading to an improvement of conversion efficiency.

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Section: Introductionsupporting

confidence: 57%

Laser Induced Forward Transfer for front contact improvement in silicon heterojunction solar cells

Colina

Morales-Vilches

Voz

et al. 2015

Applied Surface Science

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“…Both properties are already successfully exploited in the intrinsic buffer layers used in SHJ solar cells, yielding conversion efficiencies as high as 24.7%, to date. 7 As with most device structures containing a-Si:H(i), a strong restriction on the temperature of processing is required, as annealing may irreversibly deteriorate the microstructure and passivation properties of the films. The presence of doped over-layers and metals may place even greater restrictions on the thermal processing of the device.…”

Section: Introductionmentioning

confidence: 99%

Amorphous silicon passivated contacts for diffused junction silicon solar cells

Bullock

Yan

Wan

et al. 2014

Journal of Applied Physics

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Carrier recombination at the metal contacts is a major obstacle in the development of high-performance crystalline silicon homojunction solar cells. To address this issue, we insert thin intrinsic hydrogenated amorphous silicon [a-Si:H(i)] passivating films between the dopant-diffused silicon surface and aluminum contacts. We find that with increasing a-Si:H(i) interlayer thickness (from 0 to 16 nm) the recombination loss at metal-contacted phosphorus (n+) and boron (p+) diffused surfaces decreases by factors of ∼25 and ∼10, respectively. Conversely, the contact resistivity increases in both cases before saturating to still acceptable values of ∼ 50 mΩ cm2 for n+ and ∼100 mΩ cm2 for p+ surfaces. Carrier transport towards the contacts likely occurs by a combination of carrier tunneling and aluminum spiking through the a-Si:H(i) layer, as supported by scanning transmission electron microscopy–energy dispersive x-ray maps. We explain the superior contact selectivity obtained on n+ surfaces by more favorable band offsets and capture cross section ratios of recombination centers at the c-Si/a-Si:H(i) interface.

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“…2 In recent years, a-Si:H layers also garnered significant attention, thanks to their excellent crystalline silicon (c-Si) surface passivation properties, even when only a few nm thin. [3][4][5][6][7][8] This property is exploited with remarkable success for passivating-contact fabrication in silicon heterojunction (SHJ) solar cells, [9][10][11][12][13][14][15][16][17][18][19][20][21][22] with reported conversion cell efficiencies as high as 26.3%. 23 For any solar cell technology, an important criterion for ultimate device performance is its stability under prolonged light exposure.…”

mentioning

confidence: 99%

Light-induced performance increase of silicon heterojunction solar cells

Kobayashi

Wolf

Levrat

et al. 2016

Applied Physics Letters

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Silicon heterojunction solar cells consist of crystalline silicon (c-Si) wafers coated with doped/intrinsic hydrogenated amorphous silicon (a-Si:H) bilayers for passivating-contact formation. Here, we unambiguously demonstrate that carrier injection either due to light soaking or (dark) forward-voltage bias increases the open circuit voltage and fill factor of finished cells, leading to a conversion efficiency gain of up to 0.3% absolute. This phenomenon contrasts markedly with the light-induced degradation known for thin-film a-Si:H solar cells. We associate our performance gain with an increase in surface passivation, which we find is specific to doped a-Si:H/c-Si structures. Our experiments suggest that this improvement originates from a reduced density of recombination-active interface states. To understand the time dependence of the observed phenomena, a kinetic model is presented.

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24.7% Record Efficiency HIT Solar Cell on Thin Silicon Wafer

Cited by 1,020 publications

References 6 publications

Laser Induced Forward Transfer for front contact improvement in silicon heterojunction solar cells

Laser Induced Forward Transfer for front contact improvement in silicon heterojunction solar cells

Amorphous silicon passivated contacts for diffused junction silicon solar cells

Light-induced performance increase of silicon heterojunction solar cells

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