24-GHz modulation bandwidth and passive alignment of flip-chip mounted DFB laser diodes

Lindgren, S.; Åhlfeldt, Henrik; Backlin, L.; Forssen, L.; Vieider, C.; Elderstig, H.; Svensson, Magnus; Granlund, L.; Andersson, LP; Keržar, B.; Broberg, B.; Kjebon, O.; Schatz, Richard; Forzelius, E.; Nilsson, S.

doi:10.1109/68.556055

Cited by 27 publications

(5 citation statements)

References 8 publications

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“…We present initial results on large area flip-chip mounted HB-LEDs that employ electroplated Au/Sn/Au for the flip-chip assembly. This lead-free solder can be bonded without flux and has the potential of reliable operation [7,8]. In our approach more than 65% of the chip surface is in direct contact with the solder.…”

Section: Introductionmentioning

confidence: 99%

LED flip‐chip assembly with electroplated AuSn alloy

Maaskant¹,

Akhter²,

Cordero³

et al. 2005

phys. stat. sol. (c)

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PACS 78.66.Fd, 81.15.Pq, 85.30.De, 85.60.Jb InGaN based high brightness (HB)-LED chips have been fabricated and bonded to substrates that were coated with electroplated Au/Sn/Au solder. The assemblies yielded a forward voltage of 5.6 V and an optical output power of 42 mW when tested at 1,000 mA bias. The electroluminescence distribution was mapped with a CCD camera to determine the current spreading into the p-contact region. Computational fluid dynamics (CFD) was used to check the effect of non-uniform current spreading on the thermal resistance of the assemblies. We show that a good knowledge of the non-uniform heat generation is required to obtain accurate modelling results. The bond strength of the AuSn solder joints exceeded the norm, when shear tested according to MIL-STD-883E (method 2019.5).

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Section: Introductionmentioning

confidence: 99%

LED flip‐chip assembly with electroplated AuSn alloy

Maaskant¹,

Akhter²,

Cordero³

et al. 2005

phys. stat. sol. (c)

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“…The demonstrator structure we decided upon, in collaboration with colleges at IMC, is a detector module for high-frequency telecommunication using a silicon, micromachined motherboard with a flip-chip mounted InP detector array. The v-grooves for the fibres are etched with a 45 • mirror in the end, and a self-aligning flip-chip technique, especially developed at IMC for this project, is used for the mounting of the InP chip [10]. With this technique, the chip is initially positioned on the electroplated AuSn solder bumps with an accuracy of about ±20 µm.…”

Section: Resultsmentioning

confidence: 99%

Micromechanics in optical microsystems - with focus on telecom systems

Bäcklund¹

1997

J. Micromech. Microeng.

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As micromachining in semiconductor materials is known to be precise with micrometre or even submicrometre dimension control, it is well suited for building optical microsystems. In this paper the potentials for microstructure technologies (MSTs) are presented, with focus on optical telecommunication systems. The specific parts and requirements for telecom systems are presented, as well as areas where future MST can be advantageous to use. Our own work at Uppsala University in this field is also presented. It has mainly been focused on how to use MST for passive alignment when building hybrid micro optical systems.

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“…2, and can be easily measured in the optical spectrum. The common measurement method involves measuring the laser transfer function with a network analyzer 19 . Normalized bias current (I bias /I th -1)…”

Section: Relaxation Oscillationsmentioning

confidence: 99%

Characterization of 1.55 μm VCSELs using high-resolution and high-dynamic range measurements of the CW optical spectrum

2007

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We present a methodology for the characterization of the main parameters of VCSELs for its use in direct modulation. Power response, chirp parameter alpha, linewidth, side-mode suppression ratio, relaxation oscillations peak frequency, damping rate and relative intensity noise (RIN) are obtained from measurements of the emitted optical spectrum in continuous wave (CW) operation by means of a high resolution (10 MHz) and high dynamic range (80 dB) optical spectrum analyzer. Many of the main static and dynamic parameters of VCSEL lasers can be obtained from the analysis of the optical spectrum when emitting in CW operation, but traditional spectrum analysis techniques do not achieve enough high resolution and dynamic range and high signal to noise ratio to perform it. Recent developments in high resolution optical spectrum analyzer (OSA) technology allow a deeper characterization of the main properties of VCSELs for its applications in optical communication systems by analyzing their CW emitted spectrum.

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24-GHz modulation bandwidth and passive alignment of flip-chip mounted DFB laser diodes

Cited by 27 publications

References 8 publications

LED flip‐chip assembly with electroplated AuSn alloy

LED flip‐chip assembly with electroplated AuSn alloy

Micromechanics in optical microsystems - with focus on telecom systems

Characterization of 1.55 μm VCSELs using high-resolution and high-dynamic range measurements of the CW optical spectrum

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