25–31 GHz GaN-Based LNA MMIC Employing Hybrid-Matching Topology for 5G Base Station Applications

Ahn, Hyun Bae; Ji, Hong−Gu; Choi, Yongjun; Lee, Sanghun; Kang, Dong Min; Han, Junghwan

doi:10.1109/lmwc.2022.3201075

Cited by 13 publications

(3 citation statements)

References 19 publications

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“…Recently, several GaN LNAs operating at Ka-band have been recorded [1,[3][4][5][6]. Depending on the substrate material, GaN LNAs are mainly classified into two types, one with GaN-on-Si process [1,3,4] and the other with GaN-on-SiC process [5][6][7]. The study of discrete components on Si substrate has been mature, leading to the conclusion that the GaN LNA with SiC substrate is not completely superior in terms of performance compared to the GaN LNA with Si substrate.…”

Section: Introductionmentioning

confidence: 99%

“…The study of discrete components on Si substrate has been mature, leading to the conclusion that the GaN LNA with SiC substrate is not completely superior in terms of performance compared to the GaN LNA with Si substrate. The SiC substrate with high thermal conductivity allows for efficient dissipative power density, and no leakage problem as with Si substrate, which further guarantees the robustness of GaN LNA [6][7]. Moreover, with the requirement of high speed, high power, and high detection accuracy for RF front-ends, it is imperative to develop GaN LNA with wider bandwidth, lower noise, and lower power consumption.…”

Section: Introductionmentioning

confidence: 99%

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A Low-power, High-gain and Excellent Noise Figure GaN-on-SiC LNA Monolithic Microwave Integrated Circuit (MMIC) operating at Ka-band for 5G/6G Application

Dai,

Li,

Yan

et al. 2024

ACES Journal

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A 25-40 GHz monolithic low-noise amplifier (LNA) is designed and fabricated with the 100 nm gallium nitride on silicon carbide (GaN-on-SiC) technology. This four-stage-cascade monolithic LNA performs a low DC power consumption of 150 mW and noise figure of 1.6-2.2 dB. Moreover, the gain of 34-37 dB with the continuous wave of more than 2 W over 24 hours can be achieved covering the operating bandwidth. Hence, this state-of-art LNA possesses a great potential to be directly integrated with GaN power amplifiers and other microwave components to realize the high-integration, high-reliability, and high-power RF front-end.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

A Low-power, High-gain and Excellent Noise Figure GaN-on-SiC LNA Monolithic Microwave Integrated Circuit (MMIC) operating at Ka-band for 5G/6G Application

Dai,

Li,

Yan

et al. 2024

ACES Journal

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“…Compared with gallium arsenide (GaAs), GaN-based materials can effectively reduce the number of transceivers and circuit size while providing higher power handling ability and higher cutoff frequency [ 8 , 9 , 10 , 11 ]. Due to the high expenditure of using homogeneous materials, heterogeneous materials are mostly used for GaN technology, including GaN-on-Si and GaN-on-SiC.…”

Section: Introductionmentioning

confidence: 99%

An MMIC LNA for Millimeter-Wave Radar and 5G Applications with GaN-on-SiC Technology

Huang

Zhang

Wang

et al. 2023

Sensors

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This paper presents a monolithic microwave integrated circuit (MMIC) low noise amplifier (LNA) that is compatible with n257 (26.5–29.5 GHz) and n258 (24.25–27.5 GHz) frequency bands for fifth-generation mobile communications system (5G) and millimeter-wave radar. The total circuit size of the LNA is 2.5 × 1.5 mm2. To guarantee a trade-off between noise figure (NF) and small signal gain, the transmission lines are connected to the source of gallium nitride (GaN)-on-SiC high electron mobility transistors (HEMT) by analyzing the nonlinear small signal equivalent circuit. A series of stability enhancement measures including source degeneration, an RC series network, and RF choke are put forward to enhance the stability of designed LNA. The designed GaN-based MMIC LNA adopts hybrid-matching networks (MNs) with co-design strategy to realize low NF and broadband characteristics across 5G n257 and n258 frequency band. Due to the different priorities of these hybrid-MNs, distinguished design strategies are employed to benefit small signal gain, input-output return loss, and NF performance. In order to meet the testing conditions of MMIC, an impeccable system for measuring small has been built to ensure the accuracy of the measured results. According to the measured results for small signal, the three-stage MMIC LNA has a linear gain of 18.2–20.3 dB and an NF of 2.5–3.1 dB with an input–output return loss better than 10 dB in the whole n257 and n258 frequency bands.

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A 26‐GHz Low Noise Amplifier With 1.6‐dB Minimum Noise Figure in 0.15‐μm GaN‐on‐SiC Process

Mao,

Chen,

et al. 2024

Micro & Optical Tech Letters

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A 24.8–29.1‐GHz four‐stage gallium nitride (GaN) low noise amplifier (LNA) monolithic microwave integrated circuit (MMIC) is presented in this letter which is fabricated in a 0.15‐μm GaN‐on‐SiC process. The proposed GaN LNA utilizes gate/drain bypass networks and source degeneration (SD) to achieve both 0–40‐GHz unconditional stability and broadband simultaneous noise and input matching (SNIM). The measured results show a peak gain of 19.9 dB with a 3‐dB bandwidth of 4.3 GHz and a low noise figure (NF) of 1.58–2.57 dB. The input and output return losses are better than 11 dB and the output‐referred third‐order intercept point (OIP3) is greater than 21 dBm. The presented LNA has a core area of 4.2 mm2 and consumes a power dissipation of 150 mW. Compared with other state‐of‐the‐art GaN LNA designs, the proposed LNA exhibits competitive NF and overall performance.

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25–31 GHz GaN-Based LNA MMIC Employing Hybrid-Matching Topology for 5G Base Station Applications

Cited by 13 publications

References 19 publications

A Low-power, High-gain and Excellent Noise Figure GaN-on-SiC LNA Monolithic Microwave Integrated Circuit (MMIC) operating at Ka-band for 5G/6G Application

A Low-power, High-gain and Excellent Noise Figure GaN-on-SiC LNA Monolithic Microwave Integrated Circuit (MMIC) operating at Ka-band for 5G/6G Application

An MMIC LNA for Millimeter-Wave Radar and 5G Applications with GaN-on-SiC Technology

A 26‐GHz Low Noise Amplifier With 1.6‐dB Minimum Noise Figure in 0.15‐μm GaN‐on‐SiC Process

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