25-31-GHz Low Noise Amplifiers in 0.15-µm GaN/SiC HEMT Process

Chen, Shih‐Yun; Wu, C.S.; Lee, Ling-Yu; Chen, Tzu-Hung; Chen, Yumin; Wang, Huei

doi:10.1109/rfit54256.2022.9882439

Cited by 5 publications

(1 citation statement)

References 8 publications

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“…A 90 nm GaN LNA demonstrated a gain of 14.3-24.4 dB from 18-44 GHz with a 1.5-2.5 dB NF [7]. A 150 nm GaN on SiC LNA measured a gain of 15-17 dB from 25-31 GHz with a 2.2 dB NF and OP1dB of 17.4 dBm [8]. A previously reported LNA in 40 nm GaN had also shown 1-1.6 dB NF at 30-39.3 GHz with OP1dB of 11 dBm [9].…”

Section: Introductionmentioning

confidence: 99%

A Survey of GaN HEMT Technologies for Millimeter-Wave Low Noise Applications

Miller,

Arias-Purdue,

Arkun

et al. 2023

IEEE J. Microw.

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This article presents a set of measured benchmarks for the noise and gain performance of six different millimeter-wave (mm-wave) gallium nitride (GaN) high electron mobility transistor (HEMT) technologies fabricated at four different foundries in the United States. Measurements of the GaN transistors were collected on two independent noise parameter (NP) systems from 8-50 GHz and 75-110 GHz. The resulting raw NPs were stitched together to yield ultra broadband 8-110 GHz smoothed NPs. Several comparisons and summaries of the minimum noise figure and associated gain are reported for the six different GaN technologies. This work seeks to provide an initial database for noise and gain of GaN HEMTs at mm-wave frequencies to quantify progress on technology in the future.INDEX TERMS Gallium nitride (GaN), high electron mobility transistor (HEMT), noise parameters, low noise amplifier.

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Section: Introductionmentioning

confidence: 99%

A Survey of GaN HEMT Technologies for Millimeter-Wave Low Noise Applications

Miller,

Arias-Purdue,

Arkun

et al. 2023

IEEE J. Microw.

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A GaN‐on‐SiC Millimeter‐Wave Low Noise Amplifier Using Hybrid‐Matching Technique for 5G n258 Applications

Lan,

Zhang,

Huang

et al. 2024

Micro & Optical Tech Letters

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This letter details the design and implementation of a millimeter‐wave (mm‐Wave) low noise amplifier (LNA) employing 150‐nm gallium nitride on silicon carbide (GaN‐on‐SiC) high electron mobility transistor technology, specifically tailored for fifth‐generation (5G) applications. The proposed GaN‐based LNA integrates a hybrid matching topology alongside a co‐design strategy, thereby optimizing the noise figure (NF) by minimizing interstage matching components. The fabricated LNA, spanning a total chip area of 2.3 × 1.4 mm², exhibits a linear gain in the range of 17.41–19.2 dB and maintains an NF within 2.32–3.06 dB. Additionally, commendable input/output return losses exceeding 7.5 dB are achieved across the 23–27.5 GHz, with the apparatus consuming approximately 150 mW.

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