25 Gb/s Silicon Photonics Interconnect Using a Transmitter Based on a Node-Matched-Diode Modulator

Kupijai, Sebastian; Rhee, H.; Al-Saadi, Aws; Henniges, Marvin; Bronzi, Danilo; Selicke, David; Theiss, Christoph; Otte, Sven; Eichler, Hans Joachim; Woggon, U.; Stolarek, David; Richter, H.; Zimmermann, Lars; Tillack, Bernd; Meister, Stefan

doi:10.1109/jlt.2015.2489840

Cited by 12 publications

(9 citation statements)

References 9 publications

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“… 6 . Accuglass-T by Honeywell was used for the oxide upper cladding, resulting in a multi-layer structure widely used in PICs 7 , 8 . SU-8 polymer ( n ~ 1.58 at 1550 nm) was selected for the waveguide, but the possibility of using other low-index materials has also been demonstrated 6 .…”

Section: Methodsmentioning

confidence: 99%

Wavelength stability in a hybrid photonic crystal laser through controlled nonlinear absorptive heating in the reflector

et al. 2018

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The need for miniaturized, fully integrated semiconductor lasers has stimulated significant research efforts into realizing unconventional configurations that can meet the performance requirements of a large spectrum of applications, ranging from communication systems to sensing. We demonstrate a hybrid, silicon photonics-compatible photonic crystal (PhC) laser architecture that can be used to implement cost-effective, high-capacity light sources, with high side-mode suppression ratio and milliwatt output output powers. The emitted wavelength is set and controlled by a silicon PhC cavity-based reflective filter with the gain provided by a III–V-based reflective semiconductor optical amplifier (RSOA). The high power density in the laser cavity results in a significant enhancement of the nonlinear absorption in silicon in the high Q-factor PhC resonator. The heat generated in this manner creates a tuning effect in the wavelength-selective element, which can be used to offset external temperature fluctuations without the use of active cooling. Our approach is fully compatible with existing fabrication and integration technologies, providing a practical route to integrated lasing in wavelength-sensitive schemes.

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Section: Methodsmentioning

confidence: 99%

Wavelength stability in a hybrid photonic crystal laser through controlled nonlinear absorptive heating in the reflector

et al. 2018

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“…For DCI applications, a low-cost fiber coupling manufactured in a scalable technology is required. For that purpose, grating couplers (GRCs) are already established for intra DCIs [19,20]. For dual polarization applications, 1D-GRC (single polarization) are extended toward 2D-GRC (polarization independent), which are of a particular interest due to their intrinsic polarization splitting and the possibility of on-wafer testing.…”

Section: In-/out-couplingmentioning

confidence: 99%

Toward coherent O-band data center interconnects

Seiler

Georgieva

Winzer

et al. 2021

Front. Optoelectron.

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Upcoming generations of coherent intra/inter data center interconnects currently lack a clear path toward a reduction of cost and power consumption, which are the driving factors for these data links. In this work, the tradeoffs associated with a transition from coherent C-band to O-band silicon photonics are addressed and evaluated. The discussion includes the fundamental components of coherent data links, namely the optical components, fiber link and transceivers. As a major component of these links, a monolithic silicon photonic BiCMOS O-band coherent receiver is evaluated for its potential performance and compared to an analogous C-band device.

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“…the effect of free charges concentration in silicon on the real and imaginary parts of the refractive index [35]. While carrier injection has a high efficiency, it also suffers from low speed limitations due to minority carrier lifetime, and needs pre-emphasis on the electrical signal to reach high data rates [36]. Devices using carrier accumulation have received a lot of attention for their high efficiency [37], but their fabrication relies on polycrystalline silicon which adds high optical losses, and their speed is limited by a large capacitance.…”

Section: Design Principlesmentioning

confidence: 99%

Co-integrated 13µm hybrid III-V/silicon tunable laser and silicon Mach-Zehnder modulator operating at 25Gb/s

Ferrotti¹,

Blampey²,

Jany³

et al. 2016

Opt. Express

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In this paper, the 200mm silicon-on-insulator (SOI) platform is used to demonstrate the monolithic co-integration of hybrid III-V/silicon distributed Bragg reflector (DBR) tunable lasers and silicon Mach-Zehnder modulators (MZMs), to achieve fully integrated hybrid transmitters for silicon photonics. The design of each active component, as well as the fabrication process steps of the whole architecture are described in detail. A data transmission rate up to 25Gb/s has been reached for transmitters using MZMs with active lengths of 2mm and 4mm. Extinction ratios of respectively 2.9dB and 4.7dB are obtained by applying drive voltages of 2.5V peak-to-peak on the MZMs. 25Gb/s data transmission is demonstrated at 1303.5nm and 1315.8nm, with the possibility to tune the operating wavelength by up to 8.5nm in each case, by using metallic heaters above the laser Bragg reflectors.

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25 Gb/s Silicon Photonics Interconnect Using a Transmitter Based on a Node-Matched-Diode Modulator

Cited by 12 publications

References 9 publications

Wavelength stability in a hybrid photonic crystal laser through controlled nonlinear absorptive heating in the reflector

Wavelength stability in a hybrid photonic crystal laser through controlled nonlinear absorptive heating in the reflector

Toward coherent O-band data center interconnects

Co-integrated 13µm hybrid III-V/silicon tunable laser and silicon Mach-Zehnder modulator operating at 25Gb/s

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