25-Gbps&amp;#x00D7;4 optical transmitter with adjustable asymmetric pre-emphasis in 65-nm CMOS

Yazaki, Toru; Chujo, Norio; Yamashita, Hiroyuki; Tokuda, Takashi; Lee, Yong; Matsuoka, Y.

doi:10.1109/iscas.2014.6865728

Cited by 18 publications

(9 citation statements)

References 4 publications

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“…A cascade of three delay stages controls the delay and the polarity of the pre-emphasis pulse for A0 and A1. As already demonstrated by [10], introducing explicitly pulse width distortion (PWD) in the main data path A0 can result in an asymmetric equalized response. For this design, the asymmetric behavior is further expanded by introducing PWD in the other data path A1 as well.…”

Section: A Descriptionmentioning

confidence: 89%

“…To enhance the modulation speed, a lot of effort has been recently devoted to both develop novel VCSEL designs and dedicated driver circuits implementing feed forward equalization (FFE), sometimes combined with multi-level modulation formats [3], [5], [10]- [22]. Concerning the VCSEL design, Vertilas has already demonstrated, through its InP platform, 1.55 µm-VCSELs with a bandwidth up to 18 GHz and an optical power up to 4 mW at room temperature [3], [6], and the 1.3 µm solution presented in this manuscript achieves similar performance.…”

Section: Introductionmentioning

confidence: 99%

“…Concerning the VCSEL design, Vertilas has already demonstrated, through its InP platform, 1.55 µm-VCSELs with a bandwidth up to 18 GHz and an optical power up to 4 mW at room temperature [3], [6], and the 1.3 µm solution presented in this manuscript achieves similar performance. Concerning the use of proper drivers, the majority of the proposed transmitters including driving circuits, drives the anode of the VCSEL to minimize the supply voltage for both the output and biasing stage [10]- [16]. Nevertheless, in all cases the driver circuit still operates at a lower supply voltage than the VCSEL or output stage.…”

Section: Introductionmentioning

confidence: 99%

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Optical Transmitter Based on a 1.3-μm VCSEL and a SiGe Driver Circuit for Short-Reach Applications and Beyond

Malacarne

Neumeyr

Soenen

et al. 2018

J. Lightwave Technol.

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Long-wavelength vertical-cavity surface-emitting lasers (LW-VCSELs) with emission wavelength in the 1.3-µm region for intensity modulation (IM)/direct detection optical transmissions enable longer fiber reach compared to C-band VCSELs, thanks to the extremely low chromatic dispersion impact at that wavelength. A lot of effort has been recently dedicated to novel cavity designs in order to enhance LW-VCSELs' modulation bandwidth to allow higher data rates. Another approach to further improve VCSEL-based IM speed consists of making use of dedicated driver circuits implementing feedforward equalization (FFE). In this paper, we present a transmitter assembly incorporating a fourchannel 0.13-µm SiGe driver circuit wire-bonded to a novel dual 1.3-µm VCSEL array. The short-cavity indium phosphide buried tunnel junction VCSEL design minimizes both the photon lifetime and the device parasitic currents. The integrated driver circuit requires 2.5-V supply voltage only due to the implementation of a pseudobalanced regulator; it includes a two-tap asymmetric FFE, where magnitude, sign, relative delay, and pulse width distortion of the taps can be modified. Through the proposed transmitter, standard single-mode fiber reach of 20 and 4.5 km, respectively, for 28-and 40-Gb/s data rate has been demonstrated with stateof-the-art power consumption. Transmitter performance has been analyzed through pseudorandom bit sequences of both 2 7 −1 and 2 31 −1 length, and the additional benefit due to the use of the driver circuit has been discussed in detail. A final comparison with stateof-the-art VCSEL drivers is also includedt.

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Section: A Descriptionmentioning

confidence: 89%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Optical Transmitter Based on a 1.3-μm VCSEL and a SiGe Driver Circuit for Short-Reach Applications and Beyond

Malacarne

Neumeyr

Soenen

et al. 2018

J. Lightwave Technol.

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“…Transistors can be stacked to reach multiples of breakdown voltages. This is a technique common for drivers in CMOS such as [22], [23], or [24]. However, this technique is sensitive to start-up sequences and might breakdown on transient peaks.…”

Section: Design Of the Laser Diode Drivermentioning

confidence: 99%

20–25 Gbit/s low-power inductor-less single-chip optical receiver and transmitter frontend in 28 nm digital CMOS

Szilágyi

Belfiore

Henker

et al. 2017

Int. J. Microw. Wireless Technol.

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The design of an analog frontend including a receiver amplifier (RX) and laser diode driver (LDD) for optical communication system is described. The RX consists of a transimpedance amplifier, a limiting amplifier, and an output buffer (BUF). An offset compensation and common-mode control circuit is designed using switched-capacitor technique to save chip area, provides continuous reduction of the offset in the RX. Active-peaking methods are used to enhance the bandwidth and gain. The very low gate-oxide breakdown voltage of transistors in deep sub-micron technologies is overcome in the LDD by implementing a topology which has the amplifier placed in a floating well. It comprises a level shifter, a pre-amplifier, and the driver stage. The single-chip frontend, fabricated in a 28 nm bulk-digital complementary metal–oxide–semiconductor (CMOS) process has a total active area of 0.003 mm2, is among the smallest optical frontends. Without the BUF, which consumes 8 mW from a separate supply, the RX power consumption is 21 mW, while the LDD consumes 32 mW. Small-signal gain and bandwidth are measured. A photo diode and laser diode are bonded to the chip on a test-printed circuit board. Electro-optical measurements show an error-free detection with a bit error rate of 10−12at 20 Gbit/s of the RX at and a 25 Gbit/s transmission of the LDD.

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“…Anode drive has the potential to lower the supply voltage of the VCSEL driver, whereas cathode drive avoids the use of the slower p-type transistors in the high-speed path. Both still have one thing in common though, namely that the VCSEL driver is operated from multiple supply voltages to lower power consumption [1][2][3][4], with laser supply voltages ranging from 3.3 V to 5.8 V. In this paper, we will further focus on cathode drive and propose a solution to get rid of the multiple supply voltages.…”

Section: Introductionmentioning

confidence: 99%

A 40-Gb/s 1.5-µm VCSEL Link with a Low-Power SiGe VCSEL Driver and TIA Operated at 2.5 V

Soenen

Moeneclaey

Yin

et al. 2017

Optical Fiber Communication Conference

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25-Gbps×4 optical transmitter with adjustable asymmetric pre-emphasis in 65-nm CMOS

Cited by 18 publications

References 4 publications

Optical Transmitter Based on a 1.3-μm VCSEL and a SiGe Driver Circuit for Short-Reach Applications and Beyond

Optical Transmitter Based on a 1.3-μm VCSEL and a SiGe Driver Circuit for Short-Reach Applications and Beyond

20–25 Gbit/s low-power inductor-less single-chip optical receiver and transmitter frontend in 28 nm digital CMOS

A 40-Gb/s 1.5-µm VCSEL Link with a Low-Power SiGe VCSEL Driver and TIA Operated at 2.5 V

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