A 40-Gb/s 1.5-µm VCSEL Link with a Low-Power SiGe VCSEL Driver and TIA Operated at 2.5 V

Soenen, Wouter; Moeneclaey, Bart; Yin, Xin; Spiga, Silvia; Amann, Markus‐Christian; Neumeyr, Christian; Ortsiefer, M.; Mentovich, Elad; Apostolopoulos, D.; Bakopoulos, P.; Bauwelinck, Johan

doi:10.1364/ofc.2017.th3g.4

Cited by 3 publications

(3 citation statements)

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“…To enhance the modulation speed, a lot of effort has been recently devoted to both develop novel VCSEL designs and dedicated driver circuits implementing feed forward equalization (FFE), sometimes combined with multi-level modulation formats [3], [5], [10]- [22]. Concerning the VCSEL design, Vertilas has already demonstrated, through its InP platform, 1.55 µm-VCSELs with a bandwidth up to 18 GHz and an optical power up to 4 mW at room temperature [3], [6], and the 1.3 µm solution presented in this manuscript achieves similar performance.…”

Section: Introductionmentioning

confidence: 99%

“…Hence, there is a strong need to limit the supply voltage discrepancy between driver and cathode-driven VCSELs so as to reduce the power consumption and simplify the supply voltage interfacing provided by vendors. Ultimately, a single supply operated VCSEL driver or even VCSEL link is pursued as already reported in [5].…”

Section: Introductionmentioning

confidence: 99%

“…Here we present a transmitter assembly that embeds a novel high-speed 1325 nm-VCSEL wire bonded to the low-power SiGe driver circuit including 2-tap FFE from [5], targeting 28 Gb/s and 40 Gb/s over an unprecedented SSMF length. The manuscript represents an extension of [23].…”

Section: Introductionmentioning

confidence: 99%

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Optical Transmitter Based on a 1.3-μm VCSEL and a SiGe Driver Circuit for Short-Reach Applications and Beyond

Malacarne

Neumeyr

Soenen

et al. 2018

J. Lightwave Technol.

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Long-wavelength vertical-cavity surface-emitting lasers (LW-VCSELs) with emission wavelength in the 1.3-µm region for intensity modulation (IM)/direct detection optical transmissions enable longer fiber reach compared to C-band VCSELs, thanks to the extremely low chromatic dispersion impact at that wavelength. A lot of effort has been recently dedicated to novel cavity designs in order to enhance LW-VCSELs' modulation bandwidth to allow higher data rates. Another approach to further improve VCSEL-based IM speed consists of making use of dedicated driver circuits implementing feedforward equalization (FFE). In this paper, we present a transmitter assembly incorporating a fourchannel 0.13-µm SiGe driver circuit wire-bonded to a novel dual 1.3-µm VCSEL array. The short-cavity indium phosphide buried tunnel junction VCSEL design minimizes both the photon lifetime and the device parasitic currents. The integrated driver circuit requires 2.5-V supply voltage only due to the implementation of a pseudobalanced regulator; it includes a two-tap asymmetric FFE, where magnitude, sign, relative delay, and pulse width distortion of the taps can be modified. Through the proposed transmitter, standard single-mode fiber reach of 20 and 4.5 km, respectively, for 28-and 40-Gb/s data rate has been demonstrated with stateof-the-art power consumption. Transmitter performance has been analyzed through pseudorandom bit sequences of both 2 7 −1 and 2 31 −1 length, and the additional benefit due to the use of the driver circuit has been discussed in detail. A final comparison with stateof-the-art VCSEL drivers is also includedt.

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