2D and Quasi‐2D Halide Perovskites: Applications and Progress

Kim, Hyojung; Huynh, Kim Anh; Kim, Soo Young; Le, Quyet Van; Jang, Ho Won

doi:10.1002/pssr.201900435

Cited by 44 publications

(37 citation statements)

References 133 publications

(136 reference statements)

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“…To resolve low stability issue under ambient conditions, quasi‐2D and 2D halide perovskites were synthesized by inserting large organic layer into 3D perovskite frameworks, which can not only prevent the moisture intrusion but also expand the on/off ratio of resistance state. [ 32–35 ] Kim et al. synthesized (PEA) 2 Cs 3 Pb 4 I 13 as insulating and demonstrated RRAM with ultrahigh on/off ratio of 10 9 and high stability under ambient environment.…”

Section: Introductionmentioning

confidence: 99%

Van der Waals Epitaxy of Horizontally Orientated Bismuth Iodide/Silicon Heterostructure for Nonvolatile Resistive‐Switching Memory with Multistate Data Storage

Kuo

et al. 2020

Adv Materials Inter

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The film quality of insulators significantly affects performance of resistive random‐access memories (RRAMs), particularly in current leakage and degradation. In this study, a facile and practical method is employed to achieve the van der Waals epitaxy of bismuth iodide (BiI3) on silicon by using a self‐assembled monolayer of octadecyltrichlorosilane (OTS) as a buffer layer. The BiI3 layer is compact and has high crystallinity, a pinhole‐free, and compact surface; every BiI3 crystal is horizontally aligned with OTS–Si substrate. The RRAMs with the Si++/OTS/BiI3/Au structure exhibit excellent resistive switching properties with a very high on/off ratio of 109, long‐term stability for data retention, high endurance in write–erase cycles, and multistate information storage capacity. The crystal orientation, anisotropic carrier transport, morphology, deposition rate, and roughness considerably influence the resistive switching results. These are thoroughly investigated by analyzing the current–voltage characteristics at various temperatures, scanning electron microscope, atomic force microscope, X‐ray photoemission spectroscopy, and X‐ray diffraction patterns. It is proposed that the resistive switching mechanisms is caused by the iodine ion migration, which changes the valence charge of bismuth. This leaves a partially formed conductive metallic bismuth filament in the BiI3 layer under the electrical field that enables multistate data storage.

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Section: Introductionmentioning

confidence: 99%

Van der Waals Epitaxy of Horizontally Orientated Bismuth Iodide/Silicon Heterostructure for Nonvolatile Resistive‐Switching Memory with Multistate Data Storage

Kuo

et al. 2020

Adv Materials Inter

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“…The inset of Figure 1a shows an optical image of an MAPbBr3 single crystal with dimensions of ∼ 6×7×2 mm 3 . Figure 1a presents the typical XRD 2θ scan data of the MAPbBr3 single crystal at room temperature.…”

Section:  Results and Discussionmentioning

confidence: 99%

“…Currently, hybrid organic-inorganic perovskites (HOIPs) have been dynamically investigated for the potential applications in solar cells, 1 light-emitting diodes, 2,3 photodetectors, 2,3 lasers 4 and transistors. 5 For perovskite solar cells, a large electrical hysteresis in current-voltage (I-V) curves has been frequently reported, which is generally attributed to ferroelectricity, 6 charge trapping, 7 or ion migration.…”

Section:  Introductionmentioning

confidence: 99%

Electric modulation of conduction in MAPbBr3 single crystals

Luo

Gong

et al. 2020

Preprint

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The resistive switching (RS) mechanism of hybrid organic-inorganic perovskites is an open question until now. Here, a switchable diode-like RS behavior in MAPbBr3 single crystals using Au (or Pt) symmetric electrodes is reported. Both the high resistance state (HRS) and low resistance state (LRS) are electrode-area dependent and light responsive. We propose an electric-field-driven inner p-n junction accompanied by a trap-controlled SCLC conduction mechanism to explain this switchable diode-like RS behavior in MAPbBr3 single crystals.

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“…Furthermore, the large organic cation between the quasi-2D perovskite layers prevents the device from breaking down because of the hydrophobicity of the alkyl amines [36][37][38][39] . Recently, ReRAM devices were reported with ON/OFF ratios ranging from 10 5 to 10 7 , which are still too low to show commercial promise 40,41 .…”

Section: Introductionmentioning

confidence: 99%

Quasi-2D halide perovskites for resistive switching devices with ON/OFF ratios above 109

et al. 2020

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Resistive random-access memory (ReRAM) devices based on halide perovskites have recently emerged as a new class of data storage devices, where the switching materials used in these devices have attracted extensive attention in recent years. Thus far, three-dimensional (3D) halide perovskites have been the most investigated materials for resistive switching memory devices. However, 3D-based memory devices display ON/OFF ratios comparable to those of oxide or chalcogenide ReRAM devices. In addition, perovskite materials are susceptible to exposure to air. Herein, we compare the resistive switching characteristics of ReRAM devices based on a quasi-two-dimensional (2D) halide perovskite, (PEA) 2 Cs 3 Pb 4 I 13 , to those based on 3D CsPbI 3. Astonishingly, the ON/OFF ratio of the (PEA) 2 Cs 3 Pb 4 I 13-based memory devices (10 9) is three orders of magnitude higher than that of the CsPbI 3 device, which is attributed to a decrease in the high-resistance state (HRS) current of the former. This device also retained a high ON/OFF current ratio for 2 weeks under ambient conditions, whereas the CsPbI 3 device degraded rapidly and showed unreliable memory properties after 5 days. These results strongly suggest that quasi-2D halide perovskites have potential in resistive switching memory based on their desirable ON/OFF ratio and long-term stability.

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2D and Quasi‐2D Halide Perovskites: Applications and Progress

Cited by 44 publications

References 133 publications

Van der Waals Epitaxy of Horizontally Orientated Bismuth Iodide/Silicon Heterostructure for Nonvolatile Resistive‐Switching Memory with Multistate Data Storage

Van der Waals Epitaxy of Horizontally Orientated Bismuth Iodide/Silicon Heterostructure for Nonvolatile Resistive‐Switching Memory with Multistate Data Storage

Electric modulation of conduction in MAPbBr3 single crystals

Quasi-2D halide perovskites for resistive switching devices with ON/OFF ratios above 109

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