2D GeP-based photonic device for near-infrared and mid-infrared ultrafast photonics

Abstract

Germanium phosphide (GeP), a rising star of novel two-dimensional (2D) material composed of Group IV–V elements, has been extensively studied and applied in photonics thanks to its broadband optical absorption, strong light–matter interaction and flexible bandgap structure. Here, we show the strong nonlinear optical (NLO) properties of 2D GeP nanoflakes in the broadband range with open-aperture Z-scan technique to explore the performance of 2D GeP microfiber photonic devices (GMPDs) in near-infrared (near-IR) and mid-infrared (mid-IR) ultrafast photonics. Our results suggest that employing the GMPD as an optical device in an erbium-doped fiber laser (EDFL) system results in ultrashort pulses and rogue waves (RWs) at 1.55 μm. Likewise, by the incorporation of GMPD into a thulium-doped fiber laser (TDFL) system, stable ultrashort pulse operation is also achieved at 2.0 μm. We expect these findings to be an excellent GMPD that can be applied in mode-locked fiber lasers to open up new avenues for its development and application in ultrafast photonics.

Spin–orbit splitting and piezoelectric properties of Janus Ge2XY (X ≠ Y = P, As, Sb and Bi)

“…8 Kim et al have fabricated high ultraviolet and visible light sensitive photodetectors using single layer m-SiAs. 9 2D m-GeP and m-GeAs have been synthesized and characterized with tunable band gaps, highly anisotropic electronic transport properties and photoresponsivity, and strong nonlinear optical properties, 10–13 and have promising potential for applications in photonic integrated circuits and quantum chips, 8 field effect transistors, 14 infrared photodetectors, 15 polarized photodetection, 16 and infrared phototransistors. 17…”

“…8 Kim et al have fabricated high ultraviolet and visible light sensitive photodetectors using single layer m-SiAs. 9 2D m-GeP and m-GeAs have been synthesized and characterized with tunable band gaps, highly anisotropic electronic transport properties and photoresponsivity, and strong nonlinear optical properties, [10][11][12][13] and have promising potential for applications in photonic integrated circuits and quantum chips, 8 field effect transistors, 14 infrared photodetectors, 15 polarized photodetection, 16 and infrared phototransistors. 17 Recent studies show that the monolayer group IV-V compounds AB also possess a stable hexagonal crystal structure with a P% 6m2 or P% 3m1 symmetry (h-AB), as isoelectronic counterparts to group-III monochalcogenides MX (M = B, Al, Ga, In, and Tl; X = S, Se, and Te).…”

Electrochemical Behavior of Reduced Graphene Oxide Supported Germanium Oxide, Germanium Nitride, and Germanium Phosphide as Lithium-Ion Battery Anodes Obtained from Highly Soluble Germanium Oxide

“…The applications of germanium dioxide are determined by its optical and electrical properties [ 2 ] and are characterized by a wide band gap (more than 5 eV), high transparency in the visible and infrared regions, and a high refractive index (1.6–1.7) [ 3 , 4 ]. Germanium phosphide has emerged as an attractive candidate for broad-band and mid-infrared photonics [ 5 ]. Germanium nitride has attracted interest due to its unique properties [ 6 , 7 , 8 ].…”

Anisotropic Van Der Waals 2D GeAs Integrated on Silicon Four-Waveguide Crossing

“…The recently rediscovered germanium-based 2D materials such as GeP, and GeAs, distinguished themselves from the other candidates with their superior optoelectronic features [37], [38], [39], [40]. For instance, they possess broadband detection due to the narrow and wide tunable bandgap energies (0.51-1.68 eV) [38], [41], [42], their integration capabilities on various substrate materials, and they exhibit sensitivity to the light polarization.…”