2D MoS2–carbon quantum dot hybrid based large area, flexible UV–vis–NIR photodetector on paper substrate

Sahatiya, Parikshit; Jones, Stephen T.; Badhulika, Sushmee

doi:10.1016/j.apmt.2017.12.013

Cited by 110 publications

(60 citation statements)

References 57 publications

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“…So far most of the devices reported have implemented MoS 2, which has an indirect bandgap of 1.2–1.8 eV (direct bandgap in a monolayer), carrier mobility up to 480 cm 2 V −1 s −1 and an on–off ratio up too (10 6 ) . Ma et al fabricated others where a MoS 2 flexible photodetector on a PAR substrate, fully encapsulated by a PVP layer ( Figure a) .…”

Section: Progress Of 2d Materials Flexible Photodetectors Architecturesmentioning

confidence: 99%

Flexible Photodetector Based on 2D Materials: Processing, Architectures, and Applications

Dong

Simões

Yang

2020

Adv Materials Inter

148

111

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Flexible photodetectors have emerged during the past few years for applications in healthcare, security, and environmental monitoring. Recently, 2D materials have started being implemented as functional layers in flexible photodetector due to their outstanding optoelectronic characteristics paired with high mechanical flexibility. In this work, the authors analyze the progress of 2D material‐based flexible photodetectors architectures, with a focus on graphene family, (Di)chalcogenides and van der Waals heterostructures. The optical and mechanical characteristics of 2D materials flexible photodetectors are systematically analyzed. Furthermore, the processing techniques compatible with flexible substrates and proof‐of‐concept sensors integrating 2D material flexible photodetectors are also reviewed. In the last section, the remaining challenges and future perspectives are discussed, envisioning to support future developments in the field.

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Section: Progress Of 2d Materials Flexible Photodetectors Architecturesmentioning

confidence: 99%

Flexible Photodetector Based on 2D Materials: Processing, Architectures, and Applications

Dong

Simões

Yang

2020

Adv Materials Inter

148

111

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“…Besides, the Fermi level of the graphene can be tuned by coupling some semiconductor QDs with graphene . For 2D MoS 2 , building a 2D/0D heterostructure is a good way to improve light detection . For example, Figure E is a comparison of PL spectra of single‐layer WSe 2 and WSe 2 /N‐GQDs heterostructures.…”

Section: Low‐dimensional Semiconductor Nanomaterialsmentioning

confidence: 99%

“…124 For 2D MoS 2 , building a 2D/0D heterostructure is a good way to improve light detection. 125,126,[141][142][143][144] For example, Figure 5E is a comparison of PL spectra of single-layer WSe 2 and WSe 2 /N-GQDs heterostructures. The charge transfer between the single layer of WSe 2 and N-GQDs has a great influence on the properties of the material, which in turn affects the performance of the corresponding device.…”

Section: D Materialsmentioning

confidence: 99%

Recent advances in low‐dimensional semiconductor nanomaterials and their applications in high‐performance photodetectors

Fang

Zhou

Xiao

et al. 2019

InfoMat

130

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Low‐dimensional (including two‐dimensional [2D], one‐dimensional [1D], and zero‐dimensional [0D]) semiconductor materials have great potential in electronic/optoelectronic applications due to their unique structure and characteristics. Many 2D (such as transition metal dichalcogenides and black phosphorus) and 1D (such as NWs) materials have demonstrated superior performance in field effect transistors, photodetectors (PDs), and some flexible devices. And in some hybrid structures of 0D materials and 1D or 2D materials, the modification of 1D and 2D devices by 0D materials is embodied. This type of hybrid heterostructure has a larger performance optimization compared with the original. In the application of PDs, the variety of low‐dimensional materials and properties enable wide‐spectrum detection from ultraviolet UV to infrared, which provide a potential option for PDs under various conditions. For flexible electronic devices, high performance and mechanical stability are two important features. Low‐dimensional materials offer unparalleled advantages in flexible devices. In this review, we will focus on the various low‐dimensional materials that have been extensively studied and their applications in the electronics/optoelectronic and flexible electronics. From the composition and lattice structure of materials (including alloys) to the construction of various devices and heterostructures, we will introduce their application and recent development under various conditions. These works can provide valuable guidance for the construction and application of more high‐performance and multifunctional devices.

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“…Moreover, a photodetector using heterostructures consisting of multilayer MoS 2 and PbS QDs was fabricated and operated in the broad spectral range from visible to infrared wavelengths (i.e., 400–1500 nm), demonstrating much higher photoresponsivity than those of photodetectors solely employing MoS 2 or PbS QDs . Furthermore, by taking the advantages of the different absorption features of the two materials, an ultraviolet to near‐infrared photoresponse was achieved in a flexible photodetector employing a hybrid of 2D MoS 2 nanosheets and carbon QDs, where the typical responsivities in the ultraviolet, visible, and near‐infrared ranges were 8.4, 18.12, and 2.62 mA W −1 , respectively . By vertically stacking n‐type 1L MoS 2 and p‐type single‐walled carbon nanotubes (SWCNTs), a gate‐tunable phototransistor based on such 2D–1D heterojunctions was demonstrated, exhibiting a fast photoresponse (<15 µs) together with an external quantum efficiency of 25% .…”

Section: D Semiconductor–based Photodetectorsmentioning

confidence: 99%

Light Sources and Photodetectors Enabled by 2D Semiconductors

Shang

Cong

et al. 2018

Small Methods

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The emerging 2D semiconductors have aroused increasing attention due to their fascinating fundamental properties and application prospects. Technical investigation of 2D semiconductor–based electronics and optoelectronics is paving the way to realizing practical applications, which opens up new opportunities to reshape the current semiconductor industry. Particularly, 2D semiconductor–based optoelectronics can be extensively utilized in the promising semiconductor and information industries, such as solid‐state lighting, on‐chip optical interconnects, quantum computing, and communication. Here, the research progress regarding the fabrication and characterization of rapidly growing light‐emitting devices and photodetectors enabled by 2D semiconductors is reviewed. According to different emission mechanisms, 2D semiconductor–activated light sources are classified into four types: excitonic light‐emitting diodes (LEDs), quantum LEDs, valley LEDs, and lasers. Moreover, photodetecting devices based on atomically thin MoS2, other 2D semiconductors, and van der Waals heterostructures are discussed, where diverse device structures, performance parameters, and working principles are compared. Furthermore, the remaining challenges in the realization of practical devices with desirable features are outlined and new research opportunities for 2D semiconductor optoelectronics are proposed.

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2D MoS2–carbon quantum dot hybrid based large area, flexible UV–vis–NIR photodetector on paper substrate

Cited by 110 publications

References 57 publications

Flexible Photodetector Based on 2D Materials: Processing, Architectures, and Applications

Flexible Photodetector Based on 2D Materials: Processing, Architectures, and Applications

Recent advances in low‐dimensional semiconductor nanomaterials and their applications in high‐performance photodetectors

Light Sources and Photodetectors Enabled by 2D Semiconductors

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