Flexible broadband photodetectors based on 2D MoS 2 have gained significant attention due to their superior light absorption and increased light sensitivity. However, pristine MoS 2 has absorption only in visible and near IR spectrum. This paper reports a paper-based broadband photodetector having ZnS-MoS 2 hybrids as active sensing material fabricated using a simple, cost effective two-step hydrothermal method wherein trilayer MoS 2 is grown on cellulose paper followed by the growth of ZnS on MoS 2 . Optimization in terms of process parameters is done to yield uniform trilayer MoS 2 on cellulose paper. UV sensing property of ZnS and broadband absorption of MoS 2 in visible and IR, broadens the range from UV to near IR. ZnS plays the dual role for absorption in UV and in the generation of local electric fields, thereby increasing the sensitivity of the sensor. The fabricated photodetector exhibits a higher responsivity toward the visible light when compared to UV and IR light. Detailed studies in terms of energy band diagram are presented to understand the charge transport mechanism. This represents the first demonstration of a paper-based flexible broadband photodetector with excellent photoresponsivity and high bending capability that can be used for wearable electronics, flexible security, and surveillance systems, etc.

Graphene is a one atom thick carbon allotrope with all surface atoms that has attracted significant attention as a promising material as the conduction channel of a field-effect transistor and chemical field-effect transistor sensors. However, the zero bandgap of semimetal graphene still limits its application for these devices. In this work, ethanol-chemical vapor deposition (CVD) grown p-type semiconducting large-area monolayer graphene film was patterned into nanomesh by the combination of nanosphere lithography and reactive ion etching and evaluated as field-effect transistor and chemiresistor gas sensors. The resulting neck-width of the synthesized nanomesh was about ~20 nm comprised of the gap between polystyrene spheres that was formed during the reactive ion etching process. The neck-width and the periodicities of the graphene nanomesh could be easily controlled depending the duration/power of RIE and the size of PS nanospheres. The fabricated GNM transistor device exhibited promising electronic properties featuring high drive current and ION/IOFF ratio of about 6, significantly higher than its film counterpart. Similarly, when applied as chemiresistor gas sensor at room temperature, the graphene nanomesh sensor showed excellent sensitivity towards NO2 and NH3, significantly higher than their film counterparts. The ethanol-based graphene nanomesh sensors exhibited sensitivities of about 4.32%/ppm in NO2 and 0.71%/ppm in NH3 with limit of detections of 15 ppb and 160 ppb, respectively. Our demonstrated studies on controlling the neck width of the nanomesh would lead to further improvement of graphene-based transistors and sensors.

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