2D Re‐Based Transition Metal Chalcogenides: Progress, Challenges, and Opportunities

Abstract

The rise of 2D transition-metal dichalcogenides (TMDs) materials has enormous implications for the scientific community and beyond. Among TMDs, ReX 2 (X = S, Se) has attracted significant interest regarding its unusual 1T′ structure and extraordinary properties in various fields during the past 7 years. For instance, ReX 2 possesses large bandgaps (ReSe 2 : 1.3 eV, ReS 2 : 1.6 eV), distinctive interlayer decoupling, and strong anisotropic properties, which endow more degree of freedom for constructing novel optoelectronic, logic circuit, and sensor devices. Moreover, facile ion intercalation, abundant active sites, together with stable 1T′ structure enable them great perspective to fabricate high-performance catalysts and advanced energy storage devices. In this review, the structural features, fundamental physicochemical properties, as well as all existing applications of Re-based TMDs materials are comprehensively introduced. Especially, the emerging synthesis strategies are critically analyzed and pay particular attention is paid to its growth mechanism with probing the assembly process of domain architectures. Finally, current challenges and future opportunities regarding the controlled preparation methods, property, and application exploration of Re-based TMDs are discussed.

Controllable growth of type‐II Dirac semimetal PtTe2 atomic layer on Au substrate for sensitive room temperature terahertz photodetection

“…Atomically thin 2D transition metal dichalcogenides (TMDs) have drawn tremendous attention owing to their remarkable optical and electrical properties such as tunable bandgap and high carrier mobility for next-generation device applications. [1][2][3][4][5][6][7] Beyond the widely studied semiconducting TMDs (e.g., MoS 2 and WS 2 ), metallic TMDs (e.g., 1T 0 MoTe 2 /WTe 2 , PtTe 2 , and PdTe 2 ) with exotic properties offer a new platform for investigating newfangled F I G U R E 1 (A) Top view of PtTe 2 with 1T phase structure, and schematic band structure of type-I and type-II Dirac cones. (B) Schematic diagram of the controlled synthesis of atomic layer PtTe 2 via CVD method on solid and molten Au substrates.…”

A Review on Rhenium Disulfide: Synthesis Approaches, Optical Properties, and Applications in Pulsed Lasers

“…First part highlights the top-down synthesis approach which comprises of mechanical and liquid phase exfoliations. Subsequent part discusses bottom-up techniques which includes the physical vapor deposition (PVD), chemical vapor transport (CVT) and chemical vapor deposition (CVD) techniques [ 52 ]. Depending on the applications’ need, various characterizations can be performed for the 2D TMD ReS 2 films.…”

“…A clean and flat substrate, usually SiO 2 /Si (300 nm) is then used to affix the freshly sliced thin flake from the scotch tape. Similarly, mono or few layers can be obtained and transferred to the targeted substrate [ 52 ]. A highly responsive phototransistors using few layers of ReS 2 is demonstrated by Liu et al [ 87 ] using mechanical exfoliation approach.…”

“…Recently, Rhenium disulfide (ReS 2 ) in group 7 has been drawing the highest attention recently due to its uncommon electro-optical, structural and chemical attributes [ 52 ]. Contrasting to group 6 TMDs which steadied in extremely symmetric 2H structures, ReS 2 possesses a distinctive distorted 1T structure that renders an in-plane anisotropy to its physical attributes [ 53 ].…”

Realizing the Intrinsic Anisotropic Growth of 1T′ ReS2 on Selected Au(101) Substrate toward Large‐Scale Single Crystal Fabrication

“…Take ReS 2 as an example, its monoclinic distorted octahedral (1T′) structure renders it optically and electrically biaxial, and thus endows it strong 2D in‐plane anisotropic properties and the accompanied brand new applications. [ 16–24 ] However, several recent studies have revealed that Re4‐chain reconstruction occurs easily with diverse manners during ReS 2 growth process, which brings plenty of sub‐domains and GBs in each ReS 2 domain, [ 25–29 ] as schematically shown in the top row of Figure . Accordingly, these sub‐domains with different lattice orientations lead to the optical and electrical properties varying dramatically in each ReS 2 domain, and the GBs seriously degrade its electrical transport properties.…”