2D Ruddlesden–Popper perovskite sensitized SnP₂S₆ ultraviolet photodetector enabling high responsivity and fast speed

Abstract

As the newly developed wide-bandgap semiconductors, two-dimensional layered metal phosphorus chalcogenides (2D LMPCs) exhibit enormous potential applications in ultraviolet (UV) photodetection due to their superior optoelectronic performance. However, 2D LMPCs-based...

Quantum tailoring for polarization-discriminating Bi2S3 nanowire photodetectors and their multiplexing optical communication and imaging applications

“…As a consequence, the conduction band minimum of Bi 2 S 3 and the Fermi level of the Au electrodes become closer after equilibrium, which is conducive to the carrier transport. 49 Therefore, the dark current, photocurrent, responsivity, and EQE increase, whereas the on/off ratio decreases. Conversely, the use of a negative gate bias will shift the Fermi level of Bi 2 S 3 to the valence band side.…”

A high-performance self-powered photodetector based on SnP2S6 in the visible light region

“…S3 (ESI †), which are consistent with the reported values. 30,59 Once in contact with the Au electrodes with a work function of À5.1 eV, 43 electrons would flow from the SnP 2 S 6 side to the metal side, and then an energy barrier will be established due to the depletion region of SnP 2 S 6 at the interface to prevent further diffusion, 60 as shown in Fig. 7a.…”

Promoting 2D Material Photodetectors by Optical Antennas beyond Noble Metals

“…[ 4–8 ] They have manifested a series of advantages including naturally‐passivated surface, thickness/strain/torsion‐regulated bandgap, excellent in‐plane carrier mobility, Si‐complementary metal‐oxide–semiconductor processing compatibility, outstanding flexibility, etc. Thus far, hundreds of 2DLMs have been explored including elemental semiconductors and their derivatives, [ 9–13 ] nitrides, [ 14 ] phosphides, [ 15,16 ] transition metal dichalcogenides, [ 17–28 ] post transition metal chalcogenides, [ 29–35 ] transition metal halides, [ 36–38 ] solid solutions, [ 39 ] multi‐element compounds, [ 40–56 ] topological insulators, [ 57,58 ] alloys, [ 59 ] etc. Their bandgap values range from 0 up to 6 eV, theoretically enabling them to meet the diverse practical applications in various wavebands.…”

“…[4][5][6][7][8] They have manifested a series of advantages including naturally-passivated surface, thickness/strain/torsion-regulated bandgap, excellent in-plane carrier mobility, Si-complementary metal-oxidesemiconductor processing compatibility, outstanding flexibility, etc. Thus far, hundreds of 2DLMs have been explored including elemental semiconductors and their derivatives, [9][10][11][12][13] nitrides, [14] phosphides, [15,16] transition metal dichalcogenides, [17][18][19][20][21][22][23][24][25][26][27][28] post transition metal chalcogenides, [29][30][31][32][33][34][35] transition metal halides, [36][37][38] solid solutions, [39] multi-element compounds, [40][41][42][43][44][45][46][47][48][49][50]…”