2D semiconducting α-In2Se3 single crystals: Growth and huge anisotropy during transport

Nguyen, Thi Huong; Nguyễn, Văn Quảng; Duong, Anh-Tuan; Cho, Sunglae

doi:10.1016/j.jallcom.2019.151968

Cited by 7 publications

(7 citation statements)

References 25 publications

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“…[42] The bismuth-based chalcogenides Bi 2 X 3 (X = S, Se, Te) possesses an orthorhombic structure with strong optical anisotropy. [49] Main-group element trichalcogenides, such as As 2 S 3 , [50,97] 𝛼-In 2 Se 3 , [51] Si 2 Te 3 , [52] and 𝛽-In 2 S 3 , [53] also arise for potential application in polarized photodetectors.…”

Section: Trichalcogenidesmentioning

confidence: 99%

Review of Anisotropic 2D Materials: Controlled Growth, Optical Anisotropy Modulation, and Photonic Applications

Liu

et al. 2021

Laser & Photonics Reviews

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Anisotropic 2D materials are promising building blocks for future photonic and optoelectronic devices due to their low structural symmetry and in-plane optical anisotropy. This review systematically summarizes the crystalline structure, growth dynamics, optical anisotropy and their modulation strategies, and the corresponding photonic applications for emerging anisotropic 2D materials. First, the physical properties and crystalline structures of typical anisotropic 2D materials are briefly introduced. After that, special attention is paid to the growth mechanism of low-symmetry lattices, where the competition between different growth modes determines the crystal morphologies. Then, the physical principles of anisotropic optical absorption, photoluminescence, Raman scattering, photodetection, and nonlinear response are discussed based on recent scientific advances. The discussion on the techniques to modify the intrinsic in-plane anisotropy, along with the possibility of introducing optical anisotropy to the isotropic materials, add a new degree of freedom to the control over their optical properties. The review of application prospects also helps bridge the gap between the scientific exploration of novel anisotropic materials and the development of polarization-sensitive photonic devices. The discussions in this review will push forward the scientific frontier in the crystalline growth and anisotropy control of anisotropic 2D materials.

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Section: Trichalcogenidesmentioning

confidence: 99%

Review of Anisotropic 2D Materials: Controlled Growth, Optical Anisotropy Modulation, and Photonic Applications

Liu

et al. 2021

Laser & Photonics Reviews

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“…[59,88] This identification peak corresponding to the A 1 [LO (longitudinal optical) + TO (transverse optical)] mode is the sum of the two E-modes (19 and 84 cm À 1 ) and attributed to shear vibrations of one layer against others along the c-axis. [114] In addition, two peaks close to 180 � 3 cm À 1 and 195 � 3 cm À 1 are attributed to the A 1 (LO) and A 1 (TO) modes, respectively, are assigned to intra-layer vibrations. [66,114] This LO-TO splitting confirmed the lack of inversion symmetry in the R3m asymmetric structure, consistent with the STEM and SHG study.…”

Section: Optical Characteristicsmentioning

confidence: 99%

“…[114] In addition, two peaks close to 180 � 3 cm À 1 and 195 � 3 cm À 1 are attributed to the A 1 (LO) and A 1 (TO) modes, respectively, are assigned to intra-layer vibrations. [66,114] This LO-TO splitting confirmed the lack of inversion symmetry in the R3m asymmetric structure, consistent with the STEM and SHG study. [59] In particular, a small but distinct Raman feature at 266 cm À 1 , which could be regarded as the determinant evidence for the crystal structure of ferroelectric α-In 2 Se 3 .…”

Section: Optical Characteristicsmentioning

confidence: 99%

“…The room temperature photoluminescence (PL) spectra of single-crystalline α-In 2 Se 3 revealed a direct bandgap of ~1.39 � 0.02 eV. [96,[114][115][116] For both 2H and 3R crystal structures, similar PL emissions were observed. [117] Similarly, the PL emission for β-In 2 Se 3 was observed at around 1.43 � 0.02 eV with much lower intensity.…”

Section: Optical Characteristicsmentioning

confidence: 99%

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Indium Selenide (In₂Se₃) – An Emerging Van‐der‐Waals Material for Photodetection and Non‐Volatile Memory Applications

Mukherjee

Koren

2022

Israel Journal of Chemistry

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The search for ultrathin and robust ferroelectrics leads to few promising two-dimensional (2D) materials. In 2 Se 3 has drawn special attention owing to the existence of intercoupled in-plane (IP) and out-of-plane (OOP) ferroelectricity in monolayer form, which makes it a potential candidate for emerging artificial intelligence, information processing and memory applications. In addition, the high optical absorption and phase-dependent visible to infrared bandgap become advantageous from optoelectronics point-of-view. This unique ferroelectric and optoelectronic coupling further leads to explore atomic-scale multifunctional devices. In this review, we summarized the progress of non-volatile memory (NVM) and photodetector devices, and their intercoupled applications using 2D In 2 Se 3 . We expect that this review will provide an insight towards the promising future of 2D ferroelectric-(opto)electronics and motivate researchers for further development towards industrial scale.

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“…The study of these systems in the regime of monolayer offers a basic representation of more complex processes such as adsorption of proteins on solid surfaces [7][8][9], particles on a biological membrane [33], latex spheres on a silica surface [34,35], etc. Nevertheless, by looking closely at processes such as the adsorption of hydrocarbon chains [36], the crystals growth [37], and the evolution of the surface morphology of pyrolytic graphite [38], the experimental reality suggests the multilayer formation.…”

Section: Introductionmentioning

confidence: 99%

Irreversible bilayer adsorption of straight semirigid rods on two-dimensional square lattices: Jamming and percolation properties

2020

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Numerical simulations and finite-size scaling analysis have been performed to study the jamming and percolation behavior of straight semirigid rods adsorbed on two-dimensional square lattices. The depositing objects can be adsorbed on the surface forming two layers. The filling of the lattice is carried out following a generalized random sequential adsorption (RSA) mechanism. In each elementary step, (i) a set of k consecutive nearest-neighbor sites (aligned along one of two lattice axes) is randomly chosen and (ii) if each selected site is either empty or occupied by a k-mer unit in the first layer, then a new k-mer is then deposited onto the lattice. Otherwise, the attempt is rejected. The process starts with an initially empty lattice and continues until the jamming state is reached and no more objects can be deposited due to the absence of empty site clusters of appropriate size and shape. A wide range of values of k (2 k 64) is investigated. The study of the kinetic properties of the system shows that (1) the jamming coverage θ j,k is a decreasing function with increasing k, with θ j,k→∞ = 0.7299(21) the limit value for infinitely long k-mers and (2) the jamming exponent ν j remains close to 1, regardless of the size k considered. These findings are discussed in terms of the lattice dimensionality and number of sites available for adsorption. The dependence of the percolation threshold θ c,k as a function of k is also determined, with θ c,k = A + B exp(−k/C), where A = θ c,k→∞ = 0.0457(68) is the value of the percolation threshold by infinitely long k-mers, B = 0.276(25), and C = 14(2). This monotonic decreasing behavior is completely different from that observed for the standard problem of straight rods on square lattices, where the percolation threshold shows a nonmonotonic k-mer size dependence. The differences between the results obtained from bilayer and monolayer phases are explained on the basis of the transversal overlaps between rods occurring in the bilayer problem. This effect (which we call a "cross-linking effect"), its consequences on the filling kinetics, and its implications in the field of conductivity of composites filled with elongated particles (or fibers) are discussed in detail. Finally, the precise determination of the critical exponents ν, β, and γ indicates that, although the increasing in the width of the deposited layer drastically affects the behavior of the percolation threshold with k and other critical properties (such as the crossing points of the percolation probability functions), it does not alter the nature of the percolation transition occurring in the system. Accordingly, the bilayer model belongs to the same universality class as two-dimensional standard percolation model.

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2D semiconducting α-In2Se3 single crystals: Growth and huge anisotropy during transport

Cited by 7 publications

References 25 publications

Review of Anisotropic 2D Materials: Controlled Growth, Optical Anisotropy Modulation, and Photonic Applications

Review of Anisotropic 2D Materials: Controlled Growth, Optical Anisotropy Modulation, and Photonic Applications

Indium Selenide (In₂Se₃) – An Emerging Van‐der‐Waals Material for Photodetection and Non‐Volatile Memory Applications

Irreversible bilayer adsorption of straight semirigid rods on two-dimensional square lattices: Jamming and percolation properties

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2D semiconducting α-In2Se3 single crystals: Growth and huge anisotropy during transport

Cited by 7 publications

References 25 publications

Review of Anisotropic 2D Materials: Controlled Growth, Optical Anisotropy Modulation, and Photonic Applications

Review of Anisotropic 2D Materials: Controlled Growth, Optical Anisotropy Modulation, and Photonic Applications

Indium Selenide (In2Se3) – An Emerging Van‐der‐Waals Material for Photodetection and Non‐Volatile Memory Applications

Irreversible bilayer adsorption of straight semirigid rods on two-dimensional square lattices: Jamming and percolation properties

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Resources

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Indium Selenide (In₂Se₃) – An Emerging Van‐der‐Waals Material for Photodetection and Non‐Volatile Memory Applications