The weak interlayer binding in two-dimensional layered materials such as graphite gives rise to poorly understood low-friction characteristics. Accurate measurements of the adhesion forces governing the overall mechanical stability have also remained elusive. We report on the direct mechanical measurement of line tension and friction forces acting in sheared mesoscale graphite structures. We show that the friction is fundamentally stochastic in nature and is attributable to the interaction between the incommensurate interface lattices. We also measured an adhesion energy of 0.227 ± 0.005 joules per square meter, in excellent agreement with theoretical models. In addition, bistable all-mechanical memory cell structures and rotational bearings have been realized by exploiting position locking, which is provided solely by the adhesion energy.

We have measured the radial distribution and diffusion of active dopant atoms in individual silicon nanowires grown by the vapor-liquid-solid (VLS) method. Our method is based on successive surface etching of a portion of a contacted nanowire, followed by measurement of the potential difference between the etched and unetched areas using Kelvin probe force microscopy (KPFM). The radial dopant distribution is obtained by fitting the measured potentials with a three-dimensional solution of Poisson equation. We find that the radial active dopant distribution decreases by almost 2 orders of magnitude from the wire surface to its core even when there is no indication for tapering. In addition, the dopant profile is consistent with a very large diffusion coefficient of D ∼ 1 × 10 -19 m 2 s -1 . This implies that phosphorus (P) diffusion during the VLS growth is remarkably high and subsequent thermal annealing must be used when a homogeneous dopant distribution is required.

Graphene and layered materials in general exhibit rich physics and application potential owing to their exceptional electronic properties, which arise from the intricate π-orbital coupling and the symmetry breaking in twisted bilayer systems. Here, we report room-temperature experiments to study electrical transport across a bilayer graphene interface with a well-defined rotation angle between the layers that is controllable in situ. This twisted interface is artificially created in mesoscopic pillars made of highly oriented pyrolytic graphite by mechanical actuation. The overall measured angular dependence of the conductivity is consistent with a phonon-assisted transport mechanism that preserves the electron momentum of conduction electrons passing the interface. The most intriguing observations are sharp conductivity peaks at interlayer rotation angles of 21.8° and 38.2°. These angles correspond to a commensurate crystalline superstructure leading to a coherent two-dimensional (2D) electronic interface state. Such states, predicted by theory, form the basis for a new class of 2D weakly coupled bilayer systems with hitherto unexplored properties and applications.

Semiconducting nanowires grown by the vapor-liquid-solid method commonly develop nonuniform doping profiles both along the growth axis and radially due to unintentional surface doping and diffusion of the dopants from the nanowire surface to core during synthesis. We demonstrate two approaches to mitigate nonuniform doping in phosphorus-doped Si nanowires grown by the vapor-liquid-solid process. First, the growth conditions can be modified to suppress active surface doping. Second, thermal annealing following growth can be used to produce more uniform doping profiles. Kelvin probe force microscopy and scanning photocurrent microscopy were used to measure the radial and the longitudinal active dopant distribution, respectively. Doping concentration variations were reduced by 2 orders of magnitude in both annealed nanowires and those for which surface doping was suppressed.

We use Kelvin probe force microscopy and scanning photocurrent microscopy to measure the doping distribution along single phosphorous-doped silicon nanowire grown by the vapor-liquid-solid method. A nonlinear potential drop along biased silicon nanowires is detected both by measuring the surface potential directly via Kelvin probe force microscopy and by integrating the photocurrent measured by scanning photocurrent microscopy. These variations in the potential and field are further analyzed to extract the longitudinal dopant distribution along an individual silicon nanowire. The results show a very good agreement between the two methods to quantitatively detect potential, field, and doping variations within doped silicon nanowires.