Measurement of Active Dopant Distribution and Diffusion in Individual Silicon Nanowires

Koren, Elad; Berkovitch, Noel; Rosenwaks, Y.

doi:10.1021/nl9033158

Cited by 132 publications

(152 citation statements)

References 27 publications

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“…The radial dopant distribution was then obtained by fitting the measured potentials with a 3D solution of the Poisson equation as described previously. 21 Figure 1a shows a schematic illustration of an etched device following 4 etching steps. The nanowire selective etching was carried out by coating the sample with a thick layer of PMMA and defining windows by electron-beam lithography in the center of the contacted wire device as reported earlier.…”

mentioning

confidence: 99%

Obtaining Uniform Dopant Distributions in VLS-Grown Si Nanowires

Koren¹,

Hyun

Givan³

et al. 2010

Nano Lett.

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Semiconducting nanowires grown by the vapor-liquid-solid method commonly develop nonuniform doping profiles both along the growth axis and radially due to unintentional surface doping and diffusion of the dopants from the nanowire surface to core during synthesis. We demonstrate two approaches to mitigate nonuniform doping in phosphorus-doped Si nanowires grown by the vapor-liquid-solid process. First, the growth conditions can be modified to suppress active surface doping. Second, thermal annealing following growth can be used to produce more uniform doping profiles. Kelvin probe force microscopy and scanning photocurrent microscopy were used to measure the radial and the longitudinal active dopant distribution, respectively. Doping concentration variations were reduced by 2 orders of magnitude in both annealed nanowires and those for which surface doping was suppressed.

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mentioning

confidence: 99%

Obtaining Uniform Dopant Distributions in VLS-Grown Si Nanowires

Koren¹,

Hyun

Givan³

et al. 2010

Nano Lett.

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“…The doping of Si NW was quantitatively studied by Allen et al with scanning photocurrent microscopy (SPCM) [77]. Koren et al used Kelvin probe force microscopy (KPFM) and successive etching steps to obtain the radial distribution of dopants in Si NWs [144], and they also combined KPFM with SPCM to investigate the axial doping profile of Si NWs [145]. Scanning spreading resistance microscopy (SSRM) has also been used to measure the conductivity of NWs standing as-grown [146] as well as in cross-section [147].…”

Section: Scanning Probe Methodsmentioning

confidence: 99%

Doping of semiconductor nanowires

2011

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9Populärvetenskaplig sammanfattning 11List of papers 15 AbstractIn this thesis, in situ doping during growth of III-V semiconductor nanowires, primarily for photovoltaic applications, is investigated. The nanowires were grown by metalorganic vapor phase epitaxy (MOVPE), with gold seed particles. After growth the nanowires were characterized using various techniques, including photoluminescence, transmission electron microscopy and electrical measurements of contacted nanowires. Different III-V materials were studed, both binary materials such as InP and GaAs, and ternary materials such as Ga x In 1-x P. To achieve p-and n-doping, different precursors were employed.The results show that successful p-and n-doping can be achieved in many materials. The in situ doping is shown to affect the nanowire growth strongly, but differently depending on the combination of material and dopant. The main effects are related to the growth rate and the crystal structure. It is shown that the ndopant H 2 S increases the growth rate and induces wurtzite crystal structure in InP nanowires, while the p-dopant DEZn gives an unchanged growth rate with zinc blende crystal structure. En solcells förmåga att omvandla solljus till elektricitet kallas för verkningsgrad. Idag baseras de flesta solceller på grundämnet kisel, vilket är samma material som är basen för elektroniken i alla datorer. Detta material ger en medelmåttig verkningsgrad för ett medelmåttigt pris. För att göra solceller ännu mer användningsbara utvecklar många forskare och företag nya sorters solceller, som är billigare eller bättre än kiselceller. De mest effektiva solcellerna görs av så kallade III-V ("tre-fem") material, som kan ge ungefär dubbelt så mycket eleffekt som kiselceller. Tyvärr är III-V material dyra, vilket gör dessa solceller olönsamma för de flesta tillämpningar.Ett möjligt sätt att sänka kostnaderna är att göra III-V materialet i form av små, avlånga kristaller som kallas nanotrådar. Dessa nanotrådar är ungefär en tusendel så tjocka som ett hårstrå, vilket betyder att deras diameter är ungefär samma som ljusets våglängd. Mängden III-V material som används kan då minskas på två sätt. Dels kan man använda ett annat, billigare material som bärande substrat, dels behöver man bara täcka ungefär en tiondel av ytan. Nanotrådarna fungerar som små antenner som effektivt fångar in solljuset. I en solcell absorberas ljusenergin av elektroner, som tvingas i en bestämd riktning vilket skapar en elektrisk ström. För att göra detta används så kallad dopning, 13 vilket innebär att man stoppar in kontrollerade mängder av speciella föroreningar i den annars mycket rena kristallen. Med n-dopning skapar man ett överskott av elektroner, och med p-dopning skapar man ett underskott. Kombinerar man ett pdopat och ett n-dopat område får man en p-n övergång, som också kallas en diod. Det är i övergången mellan p-dopning och n-dopning som elektronerna tvingas i en speciell riktning, nämligen mot den n-dopade sidan. För att nanotrådarna ska fungera som solceller måste dä...

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“…1,4 A typical diameters of the NWs are in the range of 20 6 5 nm and the axial orientation NWs are in the [110] direction. During the growth, the NWs were doped with boron with a ratio of Si:B 8000:1.…”

Section: Sample Processing and Measurementsmentioning

confidence: 99%

“…[1][2][3][4][5][6][7][8][9][10] Unlike carbon nanotubes, Si based NWs can be synthesized with controlled diameters and doping levels for rational device design. Thermal and thermoelectric transport properties of these NWs are also of interest for potential use in thermoelectric power conversion applications.…”

Section: Introductionmentioning

confidence: 99%

Electric field effect thermoelectric transport in individual silicon and germanium/silicon nanowires

Brovman

Small

et al. 2016

Journal of Applied Physics

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We have simultaneously measured conductance and thermoelectric power (TEP) of individual silicon and germanium/silicon core/shell nanowires in the field effect transistor device configuration. As the applied gate voltage changes, the TEP shows distinctly different behaviors while the electrical conductance exhibits the turn-off, subthreshold, and saturation regimes, respectively. At room temperature, peak TEP value of $300 lV/K is observed in the subthreshold regime of the Si devices. The temperature dependence of the saturated TEP values is used to estimate the carrier doping of Si nanowires. Published by AIP Publishing.

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Measurement of Active Dopant Distribution and Diffusion in Individual Silicon Nanowires

Cited by 132 publications

References 27 publications

Obtaining Uniform Dopant Distributions in VLS-Grown Si Nanowires

Obtaining Uniform Dopant Distributions in VLS-Grown Si Nanowires

Doping of semiconductor nanowires

Electric field effect thermoelectric transport in individual silicon and germanium/silicon nanowires

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