2D semiconductors towards high-performance ultraviolet photodetection

Abstract

The emergence of two-dimensional (2D) materials has enriched building blocks for next-generation optoelectronic or electronic systems, with great concern on their utilization in various photodetection devices. Particularly, the continuous exhibition of appealing physical properties for this growing material system firmly supports their application in ultrasensitive and ultrafast detection of light extending to the ultraviolet (UV) wavelengths. Moreover, these light sensors enable the further integration with other optoelectronic materials, by taking advantage of the available silicon electronic or optoelectronic technique methodology. Here, we discuss the recent progress in the field of ultraviolet light sensors that are established on 2D semiconductors, including the potential materials, synthesis, device fabrication and several representative 2D UV photodetectors. Finally, we take a look at the challenges to be overcome and the future developments of this research field.

Recent Progress of Heterojunction Ultraviolet Photodetectors: Materials, Integrations, and Applications

“…The commonly investigated 2D materials such as MoS 2 , WS 2 , and MoSe 2 always exhibit broadband photoresponse (especially visible‐light response) because of their narrow bandgaps. Limited by the availability of wide‐bandgap 2D semiconductors, the progress of UV photodetectors based on 2D materials is restricted 69,70. However, the newly investigated 2D materials of GeSe 2 ,71 Sr 2 Nb 3 O 10 ,11 and GeS 2 72 have shown bandgap of about 3 eV, and they have been fabricated into UV photodetectors showing competitive photoresponse with state‐of‐the‐art UV detectors.…”

High-performance ultra-violet phototransistors based on CVT-grown high quality SnS2flakes

“…20,21 In addition, recent evidence has already pointed out the fascinating progress in applying 2D SnS 2 structures in lithium ion batteries, 22 eld-effect devices 23 and photodetectors, 24 benetting from the simple exfoliation from bulk crystals and the controlled bottom-up synthesis. 25,26 In particular, due to a considerable absorption coefficient (10 6 cm À1 ), 27 light sensors using 2D SnS 2 structures (most are obtained by CVD) exhibit superior UV-vis sensing performance such as high responsivity and good stability. [28][29][30] Note that, however, the thickness dependent responsivity of 2D material (including SnS 2 akes) based photodetectors (i.e.…”

Recent advances in low‐dimensional semiconductor nanomaterials and their applications in high‐performance photodetectors

“…Two‐dimensional materials enable wide‐spectrum detection from UV to visible to IR with excellent detection performance. There have been many reports on the application of 2D materials in the field of photodetection; for example, a summary of the work of Group IV metal chalcogen compounds and their alloys and heterojunctions in the field of light detection; a summary and discussion of 2D semiconductors in UV detection . There is no doubt that 2D materials have become increasingly important in the field of light detection.…”

“…There have been many reports on the application of 2D materials in the field of photodetection 6,[174][175][176] ; for example, a summary of the work of Group IV metal chalcogen compounds and their alloys and heterojunctions in the field of light detection 175 ; a summary and discussion of 2D semiconductors in UV detection. 176 There is no doubt that 2D materials have become increasingly important in the field of light detection. From UV to visible, then to IR, a wide variety of high-performance 2D semiconductor materials have taken up a wider spectrum of spectrum.…”