Recent Progress of Heterojunction Ultraviolet Photodetectors: Materials, Integrations, and Applications

Chen, Jiaxin; Ouyang, Weixin; Yang, Wei; He, Jr‐Hau; Fang, Xiaosheng

doi:10.1002/adfm.201909909

Cited by 342 publications

(223 citation statements)

References 182 publications

(215 reference statements)

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“…Many groups have tried to apply 0D perovskites for photodetection in different spectral ranges from UV to NIR. [85,[199][200][201][202][203] Among them, most of the MHP PDs mainly focus on I-or Br-based materials due to their easy preparation techniques, which limits their photodetection capacity in the shorter wavelength region due to their low bandgaps <2.5 eV. By contrast, Cl-based perovskites have wider bandgap, such as CsPbCl 3 (bandgap = 2.5 eV).…”

Section: Pds Based On 0d Perovskitesmentioning

confidence: 99%

Low‐Dimensional Metal Halide Perovskite Photodetectors

et al. 2020

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Metal halide perovskites (MHPs) have been a hot research topic due to their facile synthesis, excellent optical and optoelectronic properties, and record‐breaking efficiency of corresponding optoelectronic devices. Nowadays, the development of miniaturized high‐performance photodetectors (PDs) has been fueling the demand for novel photoactive materials, among which low‐dimensional MHPs have attracted burgeoning research interest. In this report, the synthesis, properties, photodetection performance, and stability of low‐dimensional MHPs, including 0D, 1D, 2D layered and nonlayered nanostructures, as well as their heterostructures are reviewed. Recent advances in the synthesis approaches of low‐dimensional MHPs are summarized and the key concepts for understanding the optical and optoelectronic properties related to the PD applications of low‐dimensional MHPs are introduced. More importantly, recent progress in novel PDs based on low‐dimensional MHPs is presented, and strategies for improving the performance and stability of perovskite PDs are highlighted. By discussing recent advances, strategies, and existing challenges, this progress report provides perspectives on low‐dimensional MHP‐based PDs in the future.

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Section: Pds Based On 0d Perovskitesmentioning

confidence: 99%

Low‐Dimensional Metal Halide Perovskite Photodetectors

et al. 2020

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“…Our findings enable the deterministic optical control of phases and corresponding ferroic orders in multiferroic thin films on ultrafast timescale, which would be promising for the development of novel high speed photonic‐based devices. [ 19–22 ]…”

Section: Figurementioning

confidence: 99%

Extremely Fast Optical and Nonvolatile Control of Mixed‐Phase Multiferroic BiFeO₃ via Instantaneous Strain Perturbation

Liou

Tzeng

et al. 2020

Advanced Materials

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Multiferroics—materials that exhibit coupled ferroic orders—are considered to be one of the most promising candidate material systems for next‐generation spintronics, memory, low‐power nanoelectronics and so on. To advance potential applications, approaches that lead to persistent and extremely fast functional property changes are in demand. Herein, it is revealed that the phase transition and the correlated ferroic orders in multiferroic BiFeO3 (BFO) can be modulated via illumination of single short/ultrashort light pulses. Heat transport simulations and ultrafast optical pump‐probe spectroscopy reveal that the transient strain induced by light pulses plays a key role in determining the persistent final states. Having identified the diffusionless phase transformation features via scanning transmission electron microscopy, sequential laser pulse illumination is further demonstrated to perform large‐area phase and domain manipulation in a deterministic way. The work contributes to all‐optical and rapid nonvolatile control of multiferroicity, offering different routes while designing novel optoelectronics.

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“…Figure S4 illustrates the wavelength-dependent photovoltaic behavior under irradiation of light with wavelength (λ) of 220 nm, 530 nm, and 850 nm at zero voltage bias in p-GeSe Schottky diode, as illumination wavelength decreased, the reverse and forward bias currents drastically increased. This implies that photoexcited electron-hole pairs significantly increases with greater photon energy [55][56][57] . Figure S4a shows the output characteristics of the device under the illumination of light having wavelengths (λ) 220 nm, 530 nm and 850 nm, respectively, and Fig.…”

Section: Resultsmentioning

confidence: 99%

Asymmetric electrode incorporated 2D GeSe for self-biased and efficient photodetection

Hussain

Aftab

Jaffery

et al. 2020

Sci Rep

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2D layered germanium selenide (GeSe) with p-type conductivity is incorporated with asymmetric contact electrode of chromium/Gold (Cr/Au) and Palladium/Gold (Pd/Au) to design a self-biased, high speed and an efficient photodetector. The photoresponse under photovoltaic effect is investigated for the wavelengths of light (i.e. ~220, ~530 and ~850 nm). The device exhibited promising figures of merit required for efficient photodetection, specifically the Schottky barrier diode is highly sensitive to NIR light irradiation at zero voltage with good reproducibility, which is promising for the emergency application of fire detection and night vision. The high responsivity, detectivity, normalized photocurrent to dark current ratio (NPDR), noise equivalent power (NEP) and response time for illumination of light (~850 nm) are calculated to be 280 mA/W, 4.1 × 10 9 Jones, 3 × 10 7 W −1 , 9.1 × 10 −12 WHz −1/2 and 69 ms respectively. The obtained results suggested that p-GeSe is a novel candidate for SBD optoelectronics-based technologies. Two-dimensional (2D) materials have chronically been the most widely studied materials, particularly after the successful scotch tape test to exfoliate graphene by Andre Geim and Kostya Novoselov in 2004 1. 2D materials possess excellent electrical and mechanical properties toward diverse electronic device applications. Graphene, being the prototype of 2D materials 2,3 , has been studied broadly for its exotic electrical, optical, and mechanical properties 3,4. Besides, the group-IV transition metal dichalcogenides (TMDs) having a bandgap of around 1 to 2 eV 5-7 have attracted increasing interest because of their promising electronic and optoelectronic device applications 3,8-21. Graphene possesses extremely high carrier mobility (>10 5 cm 2 V −1 s −1), but the absence of band gap limits its electronic and optoelectronic applications 22. Therefore, TMDs with the properties of graphene-like stature, bandgap tunability, weak van der Waals-like forces and stability have intrigued the interest of the scientific community. TMDs are the family of 2D materials having the chemical composition of MX 2 , where M stands for the transition metal elements (M = Mo, W, Ta, Ge…etc) and X for the chalcogen elements (X = Se, S and Te). Among TMDs, Ge-based materials are preferred for applications due to their abundance on earth and environmentally friendly nature 23. With Se, the p-type Germanium from a narrow bandgap semiconductor material as p-GeSe having exciting application in near-infrared (NIR) photodetectors and electron tunnelling devices. p-GeSe has an indirect bandgap of 1.08 eV in the bulk 24,25 , and a direct bandgap of ~1.7 eV in monolayers 24,26,27. Few layers of p-GeSe can be obtained from bulk by mechanical exfoliation method 28. Among the many applications, p-GeSe shows tremendous capability in the realm of photovoltaics, because of its excellent optical, material and electrical properties. Therefore, it is well known as substitution of phosphorene 29. Moreover, GeSe is considered as an amb...

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Recent Progress of Heterojunction Ultraviolet Photodetectors: Materials, Integrations, and Applications

Cited by 342 publications

References 182 publications

Low‐Dimensional Metal Halide Perovskite Photodetectors

Low‐Dimensional Metal Halide Perovskite Photodetectors

Extremely Fast Optical and Nonvolatile Control of Mixed‐Phase Multiferroic BiFeO₃ via Instantaneous Strain Perturbation

Asymmetric electrode incorporated 2D GeSe for self-biased and efficient photodetection

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Recent Progress of Heterojunction Ultraviolet Photodetectors: Materials, Integrations, and Applications

Cited by 342 publications

References 182 publications

Low‐Dimensional Metal Halide Perovskite Photodetectors

Low‐Dimensional Metal Halide Perovskite Photodetectors

Extremely Fast Optical and Nonvolatile Control of Mixed‐Phase Multiferroic BiFeO3 via Instantaneous Strain Perturbation

Asymmetric electrode incorporated 2D GeSe for self-biased and efficient photodetection

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Extremely Fast Optical and Nonvolatile Control of Mixed‐Phase Multiferroic BiFeO₃ via Instantaneous Strain Perturbation