2D Ultrathin p‐type ZnTe with High Environmental Stability

Abstract

The poor air stability hinders the practical application of most 2D materials. P‐type 2D ZnTe has drawn widespread attention, thanks to its wide direct bandgap and outstanding environmental stability. However, the controllable synthesis of ultrathin 2D ZnTe remains a huge challenge due to the intrinsic unlayered crystal structure. Here, p‐type 2D ultrathin ZnTe flakes are controllably synthesized by using space‐confined physical vapor deposition. In situ temperature‐dependent Raman and electronical measurements show the thermal stability up to 420 K and outstanding air stability even under humidity of 95%. The ZnTe flakes‐based photodetector demonstrates the broadband response varying from the visible to near infrared region, responsivity of 18.3 A W‐1 and detectivity (D*) of 2.89 × 109 Jones under 405 nm illumination, implying promising potential application in electronics and optoelectronics worked in harsh environment.

A zincophilic ion-conductive layer with the desolvation effect and oriented deposition behavior achieving superior reversibility of Zn metal anodes

“…1(e), the four Raman peaks located at 202, 407, 611, and 814 cm −1 correspond to the four vibration modes 1LO, 2LO, 3LO, and 4LO of the cubic phase ZnTe. 36 Relatively high Raman peaks indicate the great crystallization quality of ZnTe. These results confirm the zinc foil is covered with the cubic phase ZnTe layer.…”

Wearable Sensors Based on Atomically Thin P‐Type Semiconductors

“…[29] One major issue with the p-type conduction of 2D materials is the fermi level pinning at the metal/2D materials interface, typically prohibiting the injection of holes. [15,16,30] Moreover, only a few intrinsic p-type 2D semiconductors have been reported, [17,[33][34][35][36][37][38][39][40][41][42][43][44][45][46][47] such as WSe 2 , [31] black phosphorus, [32] tellurene, [33] MnS, [17] and Ga 2 S 3 , [18] etc., where many of them (e.g., black phosphorus) suffer from ambient stability, which hinders their applications on wearables. To meet these demands and address related issues, intensive efforts have been devoted to realizing p-and n-type 2D semiconductors, with even more attention on p-type 2D semiconductors than their n-type counterparts (Figure 1b).…”

“…[17,18,33] The timeline of experimentally prepared intrinsic p-type 2D semiconductors has been summarized as a chronicle in Figure 1c. [17,[33][34][35][36][37][38][39][40][41][42][43][44][45][46][47] Despite the increasing interest and effort in p-type 2D semiconductors and their potential for wearable devices, there are no thorough reviews of the current state and prospects for 2D p-type semiconductor-based wearables. While previous reviews have discussed materials, manufacturing, and device-level research for 2D material-based wearables, few have focused on 2D p-type semiconductors, and those that have often relate to materials [15] or general electronic applications.…”

“…c) Historical timeline of experimental realization of p‐ type 2D materials after the discovery of graphene. [ 17,33–47 ]…”

“…Search index: TOPIC: 2D materials and TOPIC: n-type (p-type). c) Historical timeline of experimental realization of p-type 2D materials after the discovery of graphene [17,[33][34][35][36][37][38][39][40][41][42][43][44][45][46][47].…”