3.1–10.6 GHz UWB low-power CMOS power amplifier

Feng, Wu‐Shiung; Yeh, Chin-I; Zhou, Min-Zhi

doi:10.1080/21681724.2013.817021

Cited by 5 publications

(9 citation statements)

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“…In this configuration, a common source stage amplifier is followed by a common gate stage to form the cascode topology [23]- [27], [34], [35], [38], [40], [49], [53] as shown in Figure 3. Mostly the cascode power amplifier topology is employed to enhance the performance of the power amplifier.…”

Section: Cascode Power Amplifier Topologymentioning

confidence: 99%

“…Mostly the cascode power amplifier topology is employed to enhance the performance of the power amplifier. There are several advantages of this configuration including high bandwidth, boost gain, less slew rate, high stability and reducing miller capacitances [23]- [27], [34], [35], [38], [40], [49], [53]. Also, better isolation between the input and output ports is attained by the cascode scheme.…”

Section: Cascode Power Amplifier Topologymentioning

confidence: 99%

“…As well the cascode power amplifier configuration has great output impedance which makes it difficult to match this major impedance with a 50 ohm load antenna. The cascode CMOS power amplifier scheme is utilized in prior work to produce higher power-added-efficiency PAE and boost the gain [23]- [27], [34], [35], [38], [40], [49], [53].…”

Section: Cascode Power Amplifier Topologymentioning

confidence: 99%

“…The wideband CMOS cascode power amplifier [23]- [27], [34], [35], [38], [40], [49], [53] review is presented in this subsection. A summary of the published wideband cascode power amplifiers is listed in Table 2.…”

Section: Summary Of the Published Wideband Cascode Power Amplifiersmentioning

confidence: 99%

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Ultra-wideband CMOS power amplifier for wireless body area network applications: a review

El-Feky

Ellaithy

Fedawy

2023

IJECE

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<span lang="EN-US">A survey on ultra-wideband complementary metal-oxide semiconductor (CMOS) power amplifiers for wireless body area network (WBAN) applications is presented in this paper. Formidable growth in the CMOS integrated circuits technology enhances the development in biomedical manufacture. WBAN is a promising mechanism that collects essential data from wearable sensors connected to the network and transmitted it wirelessly to a central patient monitoring station. The ultra-wideband (UWB) technology exploits the frequency band from 3.1 to 10.6 GHz and provides no interference to other communication systems, low power consumption, low-radiated power, and high data rate. These features permit it to be compatible with medical applications. The demand target is to have one transceiver integrated circuit (IC) for WBAN applications, consequently, UWB is utilized to decrease the hardware complexity. The power amplifier (PA) is the common electronic device that employing in the UWB transmitter to boost the input power to the desired output power and then feed it to the antenna of the transmitter. The advance in the design and implementation of ultra-wideband CMOS power amplifiers enhances the performance of the UWB-transceivers for WBAN applications. A review of recently published CMOS PA designs is reported in this paper with comparison tables listing wideband power amplifiers' performance.</span>

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Section: Cascode Power Amplifier Topologymentioning

confidence: 99%

Section: Cascode Power Amplifier Topologymentioning

confidence: 99%

Section: Cascode Power Amplifier Topologymentioning

confidence: 99%

Section: Summary Of the Published Wideband Cascode Power Amplifiersmentioning

confidence: 99%

See 2 more Smart Citations

Ultra-wideband CMOS power amplifier for wireless body area network applications: a review

El-Feky

Ellaithy

Fedawy

2023

IJECE

View full text Add to dashboard Cite

show abstract

“…All the Si CMOS power amplifiers proposed in [25] and [26] are operating in more than 100 GHz, which predicts that on chip transceivers could be widely used in near future. In [27], a Si CMOS power amplifier with 21 mW power consumption is introduced. Comparing with other processes power amplifier, Si CMOS power amplifier has the lowest power consumption, highest integration level, and lowest fabrication cost.…”

Section: A Full Cmos Power Amplifiermentioning

confidence: 99%