3–10 GHz low-power, low-noise CMOS distributed amplifier using splitting-load inductive peaking and noise-suppression techniques

Chang, Jin-Fa; Lin, Yo‐Sheng

doi:10.1049/el.2009.1895

Cited by 21 publications

(12 citation statements)

References 6 publications

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“…In the RF power amplifier (PA) applications, transistors are usually biased in the saturation region [4,5] to prevent from avalanche effects influenced. Nevertheless, avalanche operation of transistors is found to be beneficial to improvement of power performance, and this concept is applied for PA designs [6,7]. When transistors operate in the avalanche region, generated electron-hole pairs can contribute to increased DC current [8].…”

Section: Resultsmentioning

confidence: 99%

Compact MM‐wave CMOS distributed amplifier using series‐peaking line and M‐derived section

Lee

Yoon

Rieh

et al. 2015

Micro & Optical Tech Letters

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An mm‐wave distributed amplifier (DA) with high gain‐bandwidth (GBW) product and small chip area is implemented in a 65‐nm CMOS process. The DA consists of five cascode unit cells for high gain and isolation. To achieve a wide bandwidth, a series‐peaking line and an m‐derived section are inserted at the interstage and output networks, respectively, of each cascode unit cell. The transistor size is optimized for compromising the tradeoff between gain and bandwidth. For compact layout, all matching sections and lines are implemented using the microstrip structure. The DA exhibits a measured gain of 8.2 dB and a 3‐dB bandwidth of 65 GHz, thus reaching a GBW of 163 GHz. The return loss at the input and output are both more than 13 dB over the entire bandwidth. Due to compact layout, the chip occupies only 0.5 mm2. © 2015 Wiley Periodicals, Inc. Microwave Opt Technol Lett 57:814–817, 2015

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Section: Resultsmentioning

confidence: 99%

Compact MM‐wave CMOS distributed amplifier using series‐peaking line and M‐derived section

Lee

Yoon

Rieh

et al. 2015

Micro & Optical Tech Letters

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“…The low pass filter at the receiver end is provides a cut off at the bandwidth of the baseband signal. At the receiver side, we used a wideband amplifier, reported previously for optical communication applications . The specified noise figure of 5 dB is chosen using the these references.…”

Section: Link Budget Analysis At 350 Ghzmentioning

confidence: 99%

All electronic propagation loss measurement and link budget analysis for 350 GHz communication link

Bhardwaj

Nahar

Volakis

2016

Micro & Optical Tech Letters

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In this work, we measure the propagation losses for estimating the performance of a communication link in the frequency band of 350 GHz. The losses are measured by having a transmitter and receiver at varying distances upto 8.5 m. Due to limited ability to move the transmitter and receiver, reflection methods are employed. Using this simple method, we show the presence of water absorption lines in the spectra at 380 and 448 GHz. We also study the data‐rate enhancement using dielectric lenses. Finally, using the measured data, we estimate that data‐ rates of 1 Gbps for 8.5 m and 100 Gbps for 1 m distance are possible via a communication link at 350 GHz. © 2016 Wiley Periodicals, Inc. Microwave Opt Technol Lett 59:415–423, 2017

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“…Thus, improving important figure-of-merits (FOMs), such as, gain and NF under low supply voltage are continuous challenges in the design of UWB LNA circuit. For example, many topologies have been explored in UWB LNA design, such as, resistive feedback [4], distributed amplifiers [5] and cascode topology with current reuse technique [6,8,9]. Resistive feedback has various advantages for wideband amplification including input matching, gain and stability.…”

Section: Introductionmentioning

confidence: 99%

“…However, more number of inductors can increase overall Si chip area, which can lead to a higher fabrication cost. In various LNA topologies [1][2][3][4][5][6][7][8][9][10][11][12][13], most UWB LNAs have achieved <15 dB of S 21 and an average NF of 5 dB [5,8]. Since, an RF mixer in a directconversion receiver has a high value of NF at low frequencies and the receiver NF is approximately degraded by 3.6 dB because of flicker noise [9].…”

Section: Introductionmentioning

confidence: 99%

A 0.6 V, low‐power and high‐gain ultra‐wideband low‐noise amplifier with forward‐body‐bias technique for low‐voltage operations

Pandey

Singh

2015

IET Microwaves, Antennas & Propagation

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A two-stage common-source (CS) low-noise amplifier (LNA) that uses a forward-body-bias technique in N-type metal-oxide semiconductor devices and intended to achieve a high gain and low power consumption is proposed in this study for ultra-wideband (UWB) applications. Its first stage yields an exceptionally high gain because of high transconductance (g m1 = 16 mS) of the input device. It also shows simultaneous wideband input matching and lownoise figure (NF) characteristics with the aid of source degenerated inductors. A simple source degenerated CS topology with the shunt-peaking inductor L d2 is designed as the second stage to enhance the gain response at high frequencies. Using a standard 90 nm complementary metal-oxide semiconductor process, the proposed UWB LNA achieves a gain S 21 ≥ 20 dB in the frequency range of 3.1-10.6 GHz, while consuming only 12.6 mW power from a 0.6 V supply voltage. The simulation results show a minimum NF (NF min ) below 1.7 dB in the frequency range of 3.1-10.6 GHz and input return loss S 11 < −10 dB in the frequency range of 3.5-10 GHz. When a two tone test is performed with a frequency spacing of 2 MHz, a high value of third-order input intercept point of −8 dBm is also achieved.

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3–10 GHz low-power, low-noise CMOS distributed amplifier using splitting-load inductive peaking and noise-suppression techniques

Cited by 21 publications

References 6 publications

Compact MM‐wave CMOS distributed amplifier using series‐peaking line and M‐derived section

Compact MM‐wave CMOS distributed amplifier using series‐peaking line and M‐derived section

All electronic propagation loss measurement and link budget analysis for 350 GHz communication link

A 0.6 V, low‐power and high‐gain ultra‐wideband low‐noise amplifier with forward‐body‐bias technique for low‐voltage operations

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