2020 IEEE International Solid- State Circuits Conference - (ISSCC) 2020
DOI: 10.1109/isscc19947.2020.9063064
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3.6 A CMOS Resistor-Based Temperature Sensor with a 10fJ·K2 Resolution FoM and 0.4°C (30) Inaccuracy From −55°C to 125°C After a 1-point Trim

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Cited by 11 publications
(17 citation statements)
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“…In previous work [23], the sensor's bitstream average was expressed as a number varying between −1 and 1. Denoting this as μADC, its relationship with μ is then given by:…”
Section: B 1-point Trimmentioning
confidence: 99%
See 1 more Smart Citation
“…In previous work [23], the sensor's bitstream average was expressed as a number varying between −1 and 1. Denoting this as μADC, its relationship with μ is then given by:…”
Section: B 1-point Trimmentioning
confidence: 99%
“…The sensor's resolution is derived via differential measurements, i.e., by calculating the standard deviation of the difference in the output of two identical sensors on the same die [23]. As shown in Fig.…”
Section: Resolution and Fommentioning
confidence: 99%
“…BJT-or MOS-based temperature sensors are often used in biomedical applications due to their low power dissipation (< 2μW) and high resolution [2][3][4]. Wheatstone bridge sensors achieve state-of-the-art energy efficiency [5][6], but typically dissipate more power (> 50μW) and are quite non-linear, requiring a complex digital backend to perform polynomial linearization. Some resistor-based sensors [7][8] dissipate much less power (< 0.1μW), however, they are much less energy efficient, and their limited resolution (> 300mK) makes them unsuitable for use in biomedical applications.…”
Section: Introductionmentioning
confidence: 99%
“…This is particularly true to modern ICs in advanced technologies, such as FD-SOI and FinFET, where the aggressively scaled feature sizes and higher integration density, in combination of rapidly increased chip complexity, clock frequency and data rate and power density, as well as deterioration in thermal conduction due to insulating dielectrics, together nonlinearly accelerates the self-heating induced thermal problems at chip level. Over years, significant efforts have been devoted to develop various on-chip thermal sensing and management techniques [1][2][3][4][5][6][7][8][9][10][11][12][13][14][15][16]. Many thermal sensors have been reported including thermistor, thermocouple, BJT and diode, as well as CMOS circuit blocks [4][5][6][7][8][9][10][11][12][13][14][15][16].…”
Section: Introductionmentioning
confidence: 99%
“…Over years, significant efforts have been devoted to develop various on-chip thermal sensing and management techniques [1][2][3][4][5][6][7][8][9][10][11][12][13][14][15][16]. Many thermal sensors have been reported including thermistor, thermocouple, BJT and diode, as well as CMOS circuit blocks [4][5][6][7][8][9][10][11][12][13][14][15][16]. While various new sensors were reported to improve thermal sensitivity itself, one critical challenge remains, which is how to realize fine spatial temperature sensing resolution down to single transistor level on a large and complex IC chip that is essential to pin-pointing the self-heating sources (hot spots), in-operando, within a transistor, and hence being able to practically achieve run-time full-chip smart thermal management in real-world applications.…”
Section: Introductionmentioning
confidence: 99%