3-D Full-Band Monte Carlo Simulation of Hot-Electron Energy Distributions in Gate-All-Around Si Nanowire MOSFETs

Reaz, Mahmud; Tonigan, Andrew M.; Li, Kan; Smith, M. Brandon; Rony, M. W.; Gorchichko, Mariia; O’Hara, Andrew; Linten, Dimitri; Mitard, J.; Fang, Jingtian; Zhang, En Xia; Alles, Michael L.; Weller, Robert A.; Fleetwood, D.M.; Reed, Robert A.; Fischetti, Massimo V.; Pantelides, Sokrates T.; Weeden-Wright, Stephanie L.; Schrimpf, Ronald D.

doi:10.1109/ted.2021.3068328

Cited by 12 publications

(1 citation statement)

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“…In recent years, many works have been focusing on device-to-device variability showing how variations in the manufacturing process could cause significant effects on the performance of virtually identical transistors [2,3]. The increase in variability in as-processed devices is primarily caused by minor variations in the production process, such as random dopant fluctuations [4], oxide thickness variations [3] and hydrogen concentration variations [5]. In recent studies, it has been shown how the random statistical fluctuations in manufacturing processes impact the radiation response of a given technology [6][7][8][9] increasing costs and complexity of the radiation qualification process [10].…”

Section: Introductionmentioning

confidence: 99%

Fab-to-fab and run-to-run variability in 130 nm and 65 nm CMOS technologies exposed to ultra-high TID

et al. 2023

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The discovery of a large fab-to-fab variability in the TID response of the CMOS technologies used in the design of ASICs for the particle detectors of the HL-LHC triggered a monitoring effort to verify the consistency of the CMOS production process over time. As of 2014, 22 chips from 3 different fabs in 130 nm CMOS technology and 11 chips from 2 different fabs in 65 nm CMOS technology have been irradiated to ultra-high doses, ranging from 100 Mrad(SiO2) to 1 Grad(SiO2). This unprecedented monitoring effort revealed significant fab-to-fab and run-to-run variability, both dependent on the characteristics of the MOS transistors.

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