3-D Integrated Inductor on Silicon Backend using Compliant Interconnect Process for 10GHz Low Jitter VCO Application

Hsu, Rockwell; Muthukumar, Sriram; Zheng, Guoxing; He, Jiangqi

doi:10.1109/ectc.2006.1645701

Cited by 1 publication

(1 citation statement)

References 14 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…These technologies provide high-Q passive devices but fail to meet low-cost requirements and often need extra packaging steps for use. Silicon etching [5], ground shield patterning [6] [7], spacers [8] and micromachining for suspended planar or 3D structures [9]- [12] are other technologies that enable direct above-IC integration of high-Q inductors. However, these approaches are either complex and expensive or incompatible with standard silicon technologies which use low resistivity substrate.…”

Section: Introductionmentioning

confidence: 99%

3-D Multilayer Copper Interconnects for High-Performance Monolithic Devices and Passives

Ghannam

Bourrier

Ourak³

et al. 2013

IEEE Trans. Compon., Packag. Manufact. Technol.

View full text Add to dashboard Cite

International audienceThis paper presents a new and efficient low-cost multi-layer 3D copper interconnect process for monolithic devices and passives. It relies on the BPN and SU-8 photoresists, associated with an optimized electroplating process to form multi-level 3D interconnects in a single metallization step. The SU-8 is used as a permanent thick dielectric layer which is patterned underneath specific locations to create the desired 3D interconnect shape. A 3D seed layer is deposited above the SU-8 and the substrate to insure 3D electroplating current flow. The BPN is used as a thick mold for copper electroplating with an aspect ratio as high as 16:1. An optimized 3D copper electroplating process is later used to grow 3D interconnects, insuring transition between all metallic layers. Finally, high-Q (55 @ 5 GHz) power inductors have been designed and integrated above a 50 W RF power LDMOS device, using this process

show abstract

Section: Introductionmentioning

confidence: 99%