3-D Multilayer Copper Interconnects for High-Performance Monolithic Devices and Passives

Ghannam, Ayad; Bourrier, David; Ourak, Lamine; Viallon, Christophe; Parra, T.

doi:10.1109/tcpmt.2013.2258073

Cited by 7 publications

(6 citation statements)

References 24 publications

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“…• C) are taken into consideration, it can be highlighted that this process is compatible with above-IC integration [8].…”

Section: Fabrication Processmentioning

confidence: 94%

“…This step is crucial since the thickness and aspect ratio of this mold determines the minimum lateral conductors width and spacing. Then, both side and top parts of the solenoid coil are formed in a single 3-D copper electroplating step (f), as reported in [8]. Finally, thick photoresist mold is removed and the second seed layer is etched (g).…”

Section: Fabrication Processmentioning

confidence: 99%

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High-Performance Compact 3-D Solenoids for RF Applications

Cayron

Viallon

Bushueva

et al. 2018

IEEE Microw. Wireless Compon. Lett.

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Abstract-A cost-effective technology is proposed for the integration of very compact and high-performance 3-D solenoid inductors. Based on a two metal level process, it involves a 3-D copper electroplating step for simultaneous integration of vertical and upper sections of coils. Several solenoids fabricated on a glass substrate and ranging from 2.3 nH to 9.5 nH are presented. The best performance is experimentally achieved by a 3-turn 3 nH inductor showing a maximum Q-factor of 58 at 5.6 GHz and a self-resonant frequency of 19 GHz. The best inductance density of 63 nH/mm 2 is reached by an 8-turn 9.5 nH solenoid.

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“…• C) are taken into consideration, it can be highlighted that this process is compatible with above-IC integration [8].…”

Section: Fabrication Processmentioning

confidence: 94%

Section: Fabrication Processmentioning

confidence: 99%

High-Performance Compact 3-D Solenoids for RF Applications

Cayron

Viallon

Bushueva

et al. 2018

IEEE Microw. Wireless Compon. Lett.

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“…1). It has been fabricated either on HR-Si (4.5 kΩ cm) or on glass substrate using a low-cost single-step 3-D copper electroplating process [7] marketed by 3DiS Technologies company. Metal conductor is 13 µm-thick and 30 µm-wide.…”

Section: Illustration Of Disagreements Between Simulation and Meamentioning

confidence: 99%

“…where the Q-factors Q diss and Q rad are defined relatively to each contribution using (7) and 8, respectively.…”

Section: Modeling With Q-factorsmentioning

confidence: 99%

On-Wafer Measurement Errors Due to Unwanted Radiations on High-Q Inductors

Bushueva

Viallon

Ghannam³

et al. 2016

IEEE Trans. Microwave Theory Techn.

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This paper investigates the disagreements that may occur between on-wafer measurements and electromagnetic (EM) simulations of high-Q inductive devices. Such disagreements are highlighted on a planar spiral inductor and a 3-D solenoid which exhibit measured maximum Q-factors of 27 and 35 respectively, while 42 and 45 were expected from EM simulations. Both devices are fabricated on high-resistivity substrates. A radiative interaction is identified between RF probe and inductive device under test. By using EM simulations, extra-losses associated with this parasitic effect are fully modeled through the calculation of radiation and dissipation related Q-factors. Adjustments of onwafer probe setup are proposed to reduce this parasitic effect. Finally, the 3-D solenoid inductor is characterized using a new experimental fixture, and the maximum Q of 45 predicted by EM simulation is retrieved.

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“…The approach to implement SU-8 core allows for relatively simple formation of extremely high aspect ratio columns in the side wall of 3D solenoid inductors. Ghannam et al 89 presented a low-cost multilayer 3D copper interconnect process for high Q inductor fabrication. In the process, two kinds of photoresists, BPN and SU-8, were used to form multilevel 3D interconnects in a single metallization step.…”

Section: Inductorsmentioning

confidence: 99%

SU-8 for Microsystem Fabrication

Chiu

Cheng

2014

Photocured Materials

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SU-8 is a negative-tone photoresist that can be used to fabricate thick, high aspect ratio structures. The thickness of SU-8 structures ranges from several micrometers to several hundred micrometers or up to millimeters by direct spin coating or stacking of multiple layers of dry films. Being a negative resist, SU-8 can be used to fabricate complex three-dimensional structures such as sealed microchannels or tilted optical surfaces by multiple exposures. Another feature of SU-8 is that its properties can be controlled and modified during processes by the exposure doses, baking temperature, or even additives. This provides possibilities for novel device design and fabrication without complex fabrication processes. SU-8 has relatively low loss and absorption in the RF and visible spectral ranges, therefore, it has been used to fabricate various sensing, optical, and RF components and systems. This chapter summarizes the basic material properties and fundamental fabrication processes of SU-8. Examples of various structures, actuators, sensors, and fluidic/optical/RF components are presented to demonstrate the wide possibility of devices that can be implemented in SU-8.

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3-D Multilayer Copper Interconnects for High-Performance Monolithic Devices and Passives

Cited by 7 publications

References 24 publications

High-Performance Compact 3-D Solenoids for RF Applications

High-Performance Compact 3-D Solenoids for RF Applications

On-Wafer Measurement Errors Due to Unwanted Radiations on High-Q Inductors

SU-8 for Microsystem Fabrication

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