2022
DOI: 10.1002/admi.202101643
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3‐D Nanofabrication of Silicon and Nanostructure Fine‐Tuning via Helium Ion Implantation

Abstract: Despite the continued scaling down of semiconductor manufacturing, traditional lithography‐based nanofabrication only produces thin film structures, not 3‐D shapes. 3‐D nanofabrication remains a major challenge, especially for semiconductor materials. Most 3‐D nanofabrication techniques, such as two‐photon printing and stereolithography, mostly work for polymer materials, not solid‐state semiconductor materials. Here, a method capable of fabricating sophisticated 3‐D nanostructures of silicon based on the subs… Show more

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Cited by 11 publications
(6 citation statements)
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“…3(c). Practically, the new nano-spherical probe is well suited for contact mode AFM operation since it is ultra-smooth (B0.1 nm roughness) 55 and does not wear easily, whereas it is very difficult to complete a contact mode full scan using the sharp probe (without replacement) because it can easily wear off.…”
Section: Resultsmentioning
confidence: 99%
“…3(c). Practically, the new nano-spherical probe is well suited for contact mode AFM operation since it is ultra-smooth (B0.1 nm roughness) 55 and does not wear easily, whereas it is very difficult to complete a contact mode full scan using the sharp probe (without replacement) because it can easily wear off.…”
Section: Resultsmentioning
confidence: 99%
“…If we simplify the structure, it consists of a central semicylinder and 6 nanocylinders on top of the central semicylinder. A silicon semicylinder can be fabricated using the technique mentioned by M. N et al 47 The top nanocylinders (nanopillars) can be fabricated and suspended following the approach mentioned by Li et al 48 The next step is to transfer the cylinders to a silicon chip�this can be done using a focused ion beam tungsten probe using a method similar to the method mentioned in the work by Kim et al 49 Another method that can be used is the 3D nanofabrication using the high-energy focused helium ion beam technique mentioned by Wen et al 50 3.3. Current−Voltage Characteristics of the Optimized Photonic Structure.…”
Section: Analysis Of Oblique Incidence and Polarizationmentioning
confidence: 99%
“…Subsequently, we will increase the ZT of AGNRs by introducing heterojunction structures [88,95]. The size of the optimal AGNR structure is 25.56 nm × 1.48 nm, and the nanopore diameter is 0.57 nm, whilst the state-of-the-art helium ion microscope has a super small beam spot as small as 0.5 nm [96]. Thus, the aperiodic isotopic superlattice preparation may be achieved via chemical vapor deposition technology by controlling pulsed signals to allow different isotopic carbon source gases into the reaction chamber.…”
Section: 𝑑[𝑙𝑛 𝜎(𝜇)] 𝑑[𝜇]mentioning
confidence: 99%