3-D TCAD Assessment of Fin-Based Hybrid Devices Under Heavy Ion Irradiation in 20-nm Technology

Abstract

In this paper, the single event transient response in nanometer hybrid FinFETs like Wavy and Symmetric Dual-k Spacer (SDS) Wavy FinFETs are systematically investigated. The novel SDS Wavy FinFETs consist of an ultra-thin body (UTB), FinFET, and spacer engineering on a single silicon-on-insulator (SOI) platform. Three-dimensional quantum simulations are used to study the heavy ion irradiation on 20 nm n-type hybrid devices. The physical insight on the post ion irradiation of the devices are carefully observed and compared with the conventional FinFETs. The effects of heavy ion irradiation on various parameters including current density, ion generation, transient current, and bipolar amplification are estimated. Furthermore, the post-ion irradiation is also examined as a function of ion characteristic time and ion-track radius.

Improved post-radiation behavior of FinFET based CMOS with workfunction modulated gate

“…The TID mostly affects insulating layers and causes relatively stable long-term changes in device and circuit properties that could lead to parametric degradation or functional failure [2,13,14]. The impact of the TID on the plannar CMOS device is reported by many research groups [13][14][15][16][17][18][19]. The introduction of FinFET to the CMOS family improves the post radiation behavior due to its 3-D structure and ease of fabrication [17,20].…”

A New Type of Si-Based MOSFET for Radiation Reinforcement

“…The second approach aims to improve the gate control capability by utilising a multi-gate Finned Field Effect Transistor (FinFETs), which has a smaller sensitive area. This reduces the probability of charge collection [20,[22][23][24]. Additionally, structures such as the derived Gate-All-Around (GAA) [21,25] also exhibit excellent radiation resistance.…”