An Analytical Model for Deposited Charge of Single Event Transient (SET) in FinFET

Liu, Baojun; Cai, Li; Li, Chuang

doi:10.1007/s10836-024-06109-7

J Electron Test

2024

DOI: 10.1007/s10836-024-06109-7

|View full text |Cite

An Analytical Model for Deposited Charge of Single Event Transient (SET) in FinFET

Baojun Liu,

Li Cai,

Chuang Li

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...

Citation Types

Supporting

Mentioning

Contrasting

Year Published

2024

Publication Types

Select...

Article2

Relationship

Self Cite0

Independent2

Authors

Journals

Cited by 2 publications

References 23 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

A Comprehensive Review of Single Event Transients on Various MOS Devices

Rajakumar,

Satheesh Kumar

2024

IEEE Access

View full text Add to dashboard Cite

A Comprehensive Review of Single Event Transients on Various MOS Devices

Rajakumar,

Satheesh Kumar

2024

IEEE Access

View full text Add to dashboard Cite

Efficient Modeling of Single Event Transient Effect with Limited Peak Current: Implications for Logic Circuits

Wang,

Lu,

Yang

et al. 2024

Micromachines

View full text Add to dashboard Cite

The problem that the conventional double-exponential transient current model (DE model) can overdrive the circuit, which leads to the overestimation of the soft error rate of the logic cell, is solved. Our work uses a new and accurate model for predicting the soft error rate that brings the soft error rate closer to the actual. The piecewise double-exponential transient current model (PDE model) is chosen, and the accuracy of the model is reflected using the Layout Awareness Single Event Multi Transients Soft Error Rate Calculation tool (LA-SEMT-SER tool). The model can characterize transient current pulses piecewise and limit the peak current magnitude to not exceed the conduction current. TCAD models are constructed from 28 nm process library and cell layouts. The transfer characteristic curves of devices are calibrated, and functional timing verification is performed to ensure the accuracy of the TCAD model. The experimental results show that the PDE model is not only more consistent with TCAD simulation than the DE model in modeling the single event transient currents of the device, but also that the SER calculated by the LA-SEMT-SER tool based on the PDE model has a smaller error than the SER calculated by the LA-SEMT-SER tool based on the DE model.

show abstract

scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.

Contact Info

customersupport@researchsolutions.com

10624 S. Eastern Ave., Ste. A-614

Henderson, NV 89052, USA

This site is protected by reCAPTCHA and the Google Privacy Policy and Terms of Service apply.

Blog Terms and Conditions API Terms Privacy Policy Contact Cookie Preferences Do Not Sell or Share My Personal Information

Made with 💙 for researchers

Part of the Research Solutions Family.

An Analytical Model for Deposited Charge of Single Event Transient (SET) in FinFET

Cited by 2 publications

References 23 publications

A Comprehensive Review of Single Event Transients on Various MOS Devices

A Comprehensive Review of Single Event Transients on Various MOS Devices

Efficient Modeling of Single Event Transient Effect with Limited Peak Current: Implications for Logic Circuits

Contact Info

Product

Resources

About