3-D Thermal Component Model for Electrothermal Analysis of Multichip Power Modules With Experimental Validation

Reichl, J.; Ortiz-Rodríguez, J.M.; Hefner, Allen R.; Lai, Jih-Sheng

doi:10.1109/tpel.2014.2338278

Cited by 66 publications

(42 citation statements)

References 23 publications

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“…Some other methods for junction temperature estimation have been reported.The temperature field distribution of the chip is calculated by the finite element modeling method [79]; in [80], the transient junction temperature is calculated by Fourier series; literature [81] uses finite difference method to solve the 3-D heat distribution of devices etc. The above three methods are only suitable for simulations and are not suitable for the online calculation.…”

Section: A Junction Temperature Evaluationmentioning

confidence: 99%

Review of Power Semiconductor Device Reliability for Power Converters

et al. 2017

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Section: A Junction Temperature Evaluationmentioning

confidence: 99%

Review of Power Semiconductor Device Reliability for Power Converters

et al. 2017

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“…There has been a wealth of work in the thermal models for electro-thermal analysis of power modules [3][4][5][6][7][8][9][10][11][12][13][14][15]. Finite element method (FEM) and finite difference method (FDM) were commonly employed for the detailed three-dimensional (3D) modeling and accurate simulations of the power packages and/or modules.…”

Section: Introductionmentioning

confidence: 99%

“…Fourier series based thermal models were also used for 3D transient thermal simulation of power modules, with the assumptions of perfect cuboid for each layer in the packaged structures and temperature independent material properties [7][8][9]. All these mentioned thermal models were developed to solve the 3D heat diffusion equation subjected to the boundary conditions of either fixed temperatures [13][14][15] or heat exchanges with the ambient/coolants [7][8][9][10][11][12]. However, the power modules are rarely encountered with a fixed temperature boundary condition in realistic applications.…”

Section: Introductionmentioning

confidence: 99%

“…In comparison with the previous detailed 3D models [10][11][12][13][14][15], the present FE model has taken into account of thermal capacitance contributions from the heat sink and the voids/defects in the solder joints to attach the SiC MOSFETs. The improved accuracy of the FE simulation results was evaluated with experimentally measured junction temperatures of the MOSFETs.…”

Section: Introductionmentioning

confidence: 99%

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A Physical RC Network Model for Electrothermal Analysis of a Multichip SiC Power Module

Castellazzi

Eleffendi

et al. 2018

IEEE Trans. Power Electron.

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AbstractThis paper is concerned with the thermal models which can physically reflect the heat-flow paths in a lightweight three-phase half bridge, two-level SiC power module with 6 MOSFETs and can be used for coupled electro-thermal simulation. The finite element (FE) model was first evaluated and calibrated to provide the raw data for establishing the physical RC network model. It was experimentally verified that the cooling condition of the module mounted on a water cooler can be satisfactorily described by assuming the water cooler as a heat exchange boundary in the FE model. The compact RC network consisting of 115 R and C parameters to predict the transient junction temperatures of the 6 MOSFETS was constructed, where cross-heating effects between the MOSFETs are represented with lateral thermal resistors. A three-step curve fitting method was especially developed to overcome the challenge for extracting the R and C values of the RC network from the selected FE simulation results. The established compact RC network model can physically be correlated with the structure and heat-flow paths in the power module, and was evaluated using the FE simulation results from the power module under realistic switching conditions. It was also integrated into the LTspice model to perform the coupled electrothermal simulation to predict the power losses and junction temperatures of the 6 MOSFETs under switching frequencies from 5 kHz to 100 kHz which demonstrate the good electrothermal performance of the designed power module.Index TermsMOSFETs, SiC power module, finite element methods, RC network, curve fitting, three-phase inverters.

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“…To overcome these drawbacks 3D finite difference method (FDM) simulations are a promising alternative. They have been successfully applied for the thermal simulation of multichip power module [10], electrical machines [11] and battery storage systems [12]. In these research approaches the FDM simulations have been mainly used to obtain a time efficient 3D simulation.…”

Section: Introductionmentioning

confidence: 99%