3-Dimensional SOI/CMOS IC's fabricated by beam recrystallization

Kawamura, S; Sasaki, N.; Iwai, Tsuruji; Mukai, R.; Nakano, M.; Takagi, Mikio

doi:10.1109/iedm.1983.190517

Cited by 6 publications

(3 citation statements)

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“…[3,23,[28][29][30][31]. In addition, SOI structures are used to realize new types of devices, namely: threedimensional (3D) ICs [2,3,32,33], new memory cells based on floating-body effects [34][35], novel quantumeffect devices, for instance, single-electron SOI transistor, quantum-wire SOI transistor, etc. [36][37][38].…”

Section: Introductionmentioning

confidence: 99%

The advancement of silicon-on-insulator (SOI) devices and their basic properties

Rudenko¹,

Nazarov²,

Lysenko³

2020

SPQEO

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Silicon-on-insulator (SOI) is most promising present-day silicon technology. The use of SOI provides significant benefits over traditional bulk silicon technology in fabrication of many integrated circuits (ICs), and in particular, complementary metal-oxidesemiconductor (CMOS) ICs. It also allows extending the miniaturization of CMOS devices into the nanometer region. In this review paper, we briefly describe evolution of SOI technology and its main areas of application. The basic technological methods for fabrication of SOI wafers are presented. The principal advantages of SOI devices over bulk silicon devices are described. The types of SOI metal-oxide-semiconductor field-effect transistors (MOSFETs) and their basic electrical properties are considered.

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Section: Introductionmentioning

confidence: 99%

The advancement of silicon-on-insulator (SOI) devices and their basic properties

Rudenko¹,

Nazarov²,

Lysenko³

2020

SPQEO

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“…Moreover, recent development of threedimensional (3-D) devices, such as stacked CMOS [ 2 ] , has required a low-temperature process, because device performance degradation on the first layer must be avoided when the subsequent layers are formed.…”

Section: Introductionmentioning

confidence: 99%

Low-temperature fabrication of MOSFET's Utilizing a microwave-excited plasma oxidation technique

Kimura

Murakami

Warabisako

et al. 1986

IEEE Electron Device Lett.

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“…Over the past few years, substantial efforts have been concentrated on the development of beam recrystallization processing for SOI technology (1)(2)(3)(4)(5). Currently, various applications, such as medium scale CMOS gate arrays (6,7) and three-dimensional integrated circuits (3d-IC) multilayered active devices (8)(9)(10)(11) have been competitively demonstrated using SOI films recrystallized by scanning CW Ar laser technique. However, major drawbacks of the laser technique are poor throughput and high density of grain boundaries, which limit the potential for application.…”

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confidence: 99%

Focused Lamp Zone Melting Recrystallization of Silicon on Insulating Substrates

Sakurai

1986

J. Electrochem. Soc.

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Zone melting recrystallization (ZMR) of silicon‐on‐insulator (SOI) has been performed by a pair of focused lamps. Distinction from conventional ZMR's is local instantaneous heating with focused beams on front and back surfaces of SOI wafers, instead of keeping the entire wafer uniformly at the high temperature. 0.4 μm thick poly‐Si films over 2 μm thick insulating layer on the Si substrate are recrystallized without an appreciable redistribution of arsenic atoms implanted, 2×1015 normalions/cm2 , 150 keV through 50 μm thick Si3N4 films on the Si substrate, which suggests that the focused lamp ZMR can be compatible with the three‐dimensional devices. The unseeded Si film recrystallization on grooved quartz wafers is crack‐free, large‐grained with (100) texture across several chips. For seeded samples, the lateral epitaxy takes place completely over the SiO2 islands of 100×180 μm2 in size without any subgrain boundaries, in which displacement of the SiO2 island during ZMR can be avoided by connecting the island to each other with narrow SiO2 bridges. Major remaining problems for SOI are the warpage of Si wafers and the subgrain boundaries.

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3-Dimensional SOI/CMOS IC's fabricated by beam recrystallization

Cited by 6 publications

References 0 publications

The advancement of silicon-on-insulator (SOI) devices and their basic properties

The advancement of silicon-on-insulator (SOI) devices and their basic properties

Low-temperature fabrication of MOSFET's Utilizing a microwave-excited plasma oxidation technique

Focused Lamp Zone Melting Recrystallization of Silicon on Insulating Substrates

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