3-W Broad Area Lasers and 12-W Bars With Conversion Efficiencies up to 40% at 650 nm

Abstract

Highly efficient 650-nm high-power broad-area laser diodes and laser bars with single quantum well InGaP quantum wells embedded in AlGaInP waveguide layers, and n-AlInP and p-AlGaAs cladding layers are presented. Broad-area lasers that are 100-µm wide reach output powers of 3 W and conversion efficiencies of about 40% at 15 • C. For 5-mm wide laser bars (filling factor of 20%), maximum output powers of 12 W in continuouswave (CW) operation and 55 W in quasi-CW mode were obtained. Reliable operation of 5000 h at 800 mW for single emitters and at 5 W for laser bars will be reported.

The impact of temperature and strain-induced band gap variations on current competition and emitter power in laser bars

“…The 650 nm bars were 6 mm wide, 1.5 mm long, and consisted of 12 broad area emitters with a width of 60 m and a pitch of 500 m. These devices were mounted on CuW submounts with AuSn solder, which in turn were mounted on a standard conduction-cooled package. 12 The 980 nm bars were 6.4 mm wide, 2.4 mm long, and consisted of 64 narrow-angle tapered emitters, arranged as 16 miniarrays of 4 emitters each with a pitch of 400 m between each emitter group. 13 These devices were mounted with In solder on water cooled Cu microchannel heatsinks.…”

The Effect of Facet Heating and the Evolution with Aging

“…It must be noted though, that the different material systems used in the laser fabrication and packaging also play a role in the emitter degradation profiles achieved. The 650 nm emitting were mounted on CuW passively cooled heat sinks with AuSn solder (i.e., laser diode bar and CuW submount) is mounted on a standard conduction cooled package with a footprint of 25×25 mm 2 (Sumpf et al, 2007). However, the 980 nm tapered laser bars were mounted with In solder on Cu heat sinks with active cooling (Stiers and Kanskar, 2005).…”

Emulation of the operation and degradation of high-power laser bars using simulation tools

“…These bars had 12 60 μm wide broad-area emitters with a pitch of 500 μm. The devices were mounted on CuW submounts with AuSn solder, which in turn were mounted on standard conductioncooled packages [13]. These bars were measured before and after a 700 h ageing test performed at a constant power of P BAR = 7 W. The second set of bars comprised two 975 nm bars, which were 6.4 mm wide and 2.4 mm long.…”