We present the phase locking of an array of index-guided tapered laser diodes. An external cavity based on the self-imaging Talbot effect has been built. A volume Bragg grating is used as the output coupler to stabilize and narrow the spectrum at 976 nm. A power of 1.7 W is achieved in the in-phase single main lobe mode with a high visibility. We have checked that each emitter is locked to the Bragg wavelength with a 100 pm spectrum linewidth. The experimental results compare well with numerical simulations performed with two-dimensional wide-angle finite difference beam propagation method

In this work, the use of an asymmetric feedback technique for improving the beam quality of a broad-area diode laser is investigated using numerical simulations. A mirror stripe is placed in the external cavity to select lateral mode and provide asymmetric feedback. The width and the position of the mirror stripe are optimized to improve the beam quality. The simulation results show a good beam quality of 0.7 • FWHM and M 2 value of 2.69.

Abstract-High-brightness laser diode technology is progressing rapidly in response to competitive and evolving markets. The large volume resonators required for high-power, high-brightness operation makes their beam parameters and brightness sensitive to thermal-and carrier-induced lensing and also to multimode operation. Power and beam quality are no longer the only concerns for the design of high-brightness lasers. The increased demand for these technologies is accompanied by new performance requirements, including a wider range of wavelengths, direct electrical modulation, spectral purity and stability, and phase-locking techniques for coherent beam combining. This paper explores some of the next-generation technologies being pursued, while illustrating the growing importance of simulation and design tools. The paper begins by investigating the brightness limitations of broadarea laser diodes, including the use of asymmetric feedback to improve the modal discrimination. Next, tapered lasers are considered, with an emphasis on emerging device technologies for applications requiring electrical modulation and high spectral brightness.

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