Effects of Lateral Diffusion on the Temperature Sensitivity of the Threshold Current for 1.3-$\mu{\hbox {m}}$ Double Quantum-Well GaInNAs–GaAs Lasers

Adolfsson, Göran; Wang, Shumin; Sadeghi, Mahdad; Bengtsson, Joergen; Larsson, Anders; Lim, J.J.; Vilokkinen, V.; Melanen, P.

doi:10.1109/jqe.2008.920331

Cited by 25 publications

(10 citation statements)

References 47 publications

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“…1,2 The material systems based on InP substrate, InGaAsP/InP in particular, 3,4 are still dominant in present backbone networks, but their higher cost hinders deployment in metropolitan and local area networks with much higher device density. 5,6 Among other disadvantages, a low electron conduction band (CB) confinement of around 100 meV 4,7,8 and poor thermal conductivity of InP alloy both result in the need for active cooling. 7 Poor integration with other optical elements and low refractive index contrast in a Distributed Bragg reflector (DBR) lasers are additional drawbacks.…”

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confidence: 99%

Electro-optic properties of GaInAsSb/GaAs quantum well for high-speed integrated optoelectronic devices

et al. 2013

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The electro-optic properties of strained GaInAsSb/GaAs quantum wells (QWs) are investigated. A single QW p-i-n sample was grown by molecular beam epitaxy with antimony (Sb) pre-deposition technique. We numerically predict and experimentally verify a strong quantum confined Stark shift of 40 nm. We also predict a fast absorption recovery times crucial of high-speed optoelectronic devices mainly due to strong electron tunneling and thermionic emission. Predicted recovery times are corroborated by bias and temperature dependent time-resolved photoluminescence measurements indicating (<= 30 ps) recovery times. This makes GaInAsSb QW an attractive material particularly for electroabsorption modulators and saturable absorbers. (C) 2013 American Institute of Physics. (http://dx.doi.org/10.1063/1.4775371

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confidence: 99%

Electro-optic properties of GaInAsSb/GaAs quantum well for high-speed integrated optoelectronic devices

et al. 2013

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“…In such situations, a change in G with ridge width is the result of changes in both the optical mode and material gain profile. 26,32 In Fig. 5, comparison of the peak modal gain behavior with intrinsic carrier injection-level shows a negligible difference between the different ridge widths.…”

Section: Resultsmentioning

confidence: 95%

The measured dependence of the lateral ambipolar diffusion length on carrier injection-level in Stranski-Krastanov quantum dot devices

Naidu

Smowton

Summers

2010

Journal of Applied Physics

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Using the segmented contact method we separate and numerically evaluate the components making up the threshold current density dependence of quantum dot ridge waveguide lasers. An increasing internal optical mode loss and an increasing lateral out-diffusion current are the significant processes in ridges of widths between 4 and 10 μm, with no significant contribution from a deteriorating gain-mode overlap. By fitting a diffusion length model to the lateral out-diffusion process, we extract the ambipolar diffusion length, Ld, as a function of intrinsic carrier injection-level which covers carrier densities appropriate for functioning light-emitting diode and laser devices. The measured dependence fits a diffusion mechanism involving the thermal redistribution of carriers via the wetting-layer and most significantly leads to two regimes where Ld can be reduced in self-assembled quantum-dot systems. Only one of these is shown to be beneficial to the overall efficiency of the device, while the other is at the expense of undesired high-order nonradiative recombination processes at high injection-levels. Covering a peak modal gain range of approximately 5 to 11 cm−1 over injection-levels of 65 to 122 meV at 350 K, this dependence caused Ld to change from 0.75 to 1.50 μm, with the maximum occurring at 84 meV where the peak modal gain is 6 cm−1. Decreasing the temperature to 300 K reduced Ld to <0.75 μm over approximately the same injection-level range.

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“…In this experiment, we fabricated narrow ridge waveguide MQW lasers for high-speed operation. These lasers might exhibit large T 0 value compared with the intrinsic T 0 because of lateral current leakage [19]. In our previous work for narrow RWG metamorphic LDs with the same MQW structure, we demonstrated the maximum operation temperature of 200°C [15].…”

Section: Introductionmentioning

confidence: 88%

1.3-μm InGaAs MQW Metamorphic Laser Diode Fabricated With Lattice Relaxation Control Based on In Situ Curvature Measurement

Arai

Kobayashi

Yamamoto

et al. 2015

IEEE J. Select. Topics Quantum Electron.

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We demonstrate a lattice relaxation control by in situ curvature measurement for a metamorphic buffer. Using this relaxation control, we investigated a thin (240 nm) In 0 .15 Ga 0 .85 As metamorphic buffer for fabricating an unstrained In 0 .10 Ga 0 .90 As quasi-substrate on a GaAs substrate and succeeded in fabricating a 1.3-μm metamorphic InGaAs multiplequantum well laser diode (LD) on the metamorphic buffer. We confirmed that the LD was directly modulated at 25 Gb/s with a high-characteristic temperature (T 0 = 187 K).Index Terms-Diode lasers, metamorphic, quantum well lasers, semiconductor growth.

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Effects of Lateral Diffusion on the Temperature Sensitivity of the Threshold Current for 1.3-$\mu{\hbox {m}}$ Double Quantum-Well GaInNAs–GaAs Lasers

Cited by 25 publications

References 47 publications

Electro-optic properties of GaInAsSb/GaAs quantum well for high-speed integrated optoelectronic devices

Electro-optic properties of GaInAsSb/GaAs quantum well for high-speed integrated optoelectronic devices

The measured dependence of the lateral ambipolar diffusion length on carrier injection-level in Stranski-Krastanov quantum dot devices

1.3-μm InGaAs MQW Metamorphic Laser Diode Fabricated With Lattice Relaxation Control Based on In Situ Curvature Measurement

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