Simulation of double quantum well GaInNAs laser diodes

Lim, J.J.; MacKenzie, Roderick C. I.; Sujecki, S.; Sadeghi, Mahdad; Wang, S.M.; Wei, Yang; Gustavsson, Johan S.; Larsson, Anders; Melanen, P.; Sipilä, Pekko; Uusimaa, P.; George, A.A.; Smowton, Peter M.; Larkins, E.C.

doi:10.1049/iet-opt:20070036

Cited by 25 publications

(11 citation statements)

References 19 publications

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“…The thermal model is able to simulate regions far outside of the electrically active device region to achieve a more complete representation of the thermal environment. The device simulator shows good agreement with experiment for the devices considered [14].…”

Section: Tbr Theorymentioning

confidence: 60%

An investigation of thermal boundary resistance in 1.3 µm edge‐emitting dilute nitride quantum well laser diodes

MacKenzie

Lim

Bull

et al. 2008

Phys. Status Solidi (c)

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A theoretical investigation into the impact of the thermal boundary resistance on the performance of uncooled edge‐emitting 1.3μm InGaAsN/GaAs quantum well lasers has been performed. A state‐of‐the‐art 2D laser diode simulation tool has been extended to accurately model the thermal resistance due to the acoustic material mismatch and defect scattering at epitaxial interfaces. A small, but noticeable, increase in quantum well temperature is observed. The results clearly highlight the need for the inclusion of thermal boundary resistance in device simulation tools. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Section: Tbr Theorymentioning

confidence: 60%

An investigation of thermal boundary resistance in 1.3 µm edge‐emitting dilute nitride quantum well laser diodes

MacKenzie

Lim

Bull

et al. 2008

Phys. Status Solidi (c)

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“…We have previously performed full 2D isothermal (without self-heating) simulations on DQW GaInNAs ridge waveguide (RW) lasers and demonstrated good agreement with experiment in terms of variation of threshold current with temperature and cavity length (Lim et al 2007). Details of the device structure can be found in Wei et al (2006).…”

Section: Resultsmentioning

confidence: 79%

“…The basic semiconductor device equations solved by the semiconductor laser simulator have been described in a previous publication (Lim et al 2005(Lim et al , 2007. The laser simulator is extended in this work to include self-heating effects by solving the lattice heat flux equation and accounting for all the important heat sources (i.e.…”

Section: Laser Simulatormentioning

confidence: 99%

Thermal performance investigation of DQW GaInNAs laser diodes

et al. 2008

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In this work, we optimize the thermal performance of a double quantum well GaInNAs ridge waveguide laser using an accurate in-house 2D electro-opto-thermal laser simulator. The simulator has shown good agreement with experiments after a detailed calibration procedure. Using calibrated material parameters, we investigate the influence of the cladding doping level on the heat generation within the laser. It is found that due to the competition between Joule heating and free carrier absorption, an optimum cladding doping level exists.

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“…Full 2D electro-opto-thermal simulations of the RW lasers with the improved structure were performed using the calibrated material parameters previously determined for the reference structure (Lim et al 2007(Lim et al , 2008. Figure 4 plots the power-current characteristic and Fig.…”

Section: Resultsmentioning

confidence: 99%

“…In this work, we investigate the parameters affecting the design of the LI layer structure and demonstrate that this approach improves the dynamic performance of EELs, especially at high temperatures. The details of our in-house 2D steady-state electro-opto-thermal laser simulator have been described in previous publications (Lim et al 2007(Lim et al , 2008. The present work extends the laser simulator to model the small-signal characteristics of the laser.…”

Section: Introductionmentioning

confidence: 99%

Static and dynamic performance optimisation of a 1.3 μm GaInNAs ridge waveguide laser

et al. 2008

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In this work, we perform a multi-parameter design study to improve the performance of an uncooled directly modulated 1.3 µm GaInNAs ridge waveguide laser for high speed operation especially at high temperature. The static and dynamic performance of the improved design is analyzed using an accurate in-house 2D electro-opto-thermal laser simulator. The improved structure is shown to have a lower threshold current, higher thermal roll-over limit and higher modulation bandwidth-especially under high temperature operation. The improved structure also has a lower vertical beam divergence compared to a reference structure with a conventional design.

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Simulation of double quantum well GaInNAs laser diodes

Cited by 25 publications

References 19 publications

An investigation of thermal boundary resistance in 1.3 µm edge‐emitting dilute nitride quantum well laser diodes

An investigation of thermal boundary resistance in 1.3 µm edge‐emitting dilute nitride quantum well laser diodes

Thermal performance investigation of DQW GaInNAs laser diodes

Static and dynamic performance optimisation of a 1.3 μm GaInNAs ridge waveguide laser

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