Thermal performance investigation of DQW GaInNAs laser diodes

Lim, J.J.; MacKenzie, Roderick C. I.; Sujecki, S.; Sadeghi, Mahdad; Wang, S. M.; Adolfsson, Göran; Wei, Yongqiang; Larsson, Anders; Melanen, P.; Uusimaa, P.; George, A.A.; Smowton, Peter M.; Larkins, E.C.

doi:10.1007/s11082-008-9226-5

Cited by 6 publications

(5 citation statements)

References 7 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Full 2D electro-opto-thermal simulations of the RW lasers with the improved structure were performed using the calibrated material parameters previously determined for the reference structure (Lim et al 2007(Lim et al , 2008. Figure 4 plots the power-current characteristic and Fig.…”

Section: Resultsmentioning

confidence: 99%

“…In this work, we investigate the parameters affecting the design of the LI layer structure and demonstrate that this approach improves the dynamic performance of EELs, especially at high temperatures. The details of our in-house 2D steady-state electro-opto-thermal laser simulator have been described in previous publications (Lim et al 2007(Lim et al , 2008. The present work extends the laser simulator to model the small-signal characteristics of the laser.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Static and dynamic performance optimisation of a 1.3 μm GaInNAs ridge waveguide laser

et al. 2008

Self Cite

View full text Add to dashboard Cite

In this work, we perform a multi-parameter design study to improve the performance of an uncooled directly modulated 1.3 µm GaInNAs ridge waveguide laser for high speed operation especially at high temperature. The static and dynamic performance of the improved design is analyzed using an accurate in-house 2D electro-opto-thermal laser simulator. The improved structure is shown to have a lower threshold current, higher thermal roll-over limit and higher modulation bandwidth-especially under high temperature operation. The improved structure also has a lower vertical beam divergence compared to a reference structure with a conventional design.

show abstract

Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Static and dynamic performance optimisation of a 1.3 μm GaInNAs ridge waveguide laser

et al. 2008

Self Cite

View full text Add to dashboard Cite

show abstract

“…where S 0 is the energy difference between the band edge of valence and spin-orbit bands. While a sech function offers sometimes advantages for comparison with experiments [21],…”

Section: Gain Modelmentioning

confidence: 99%

A nonlinear gain model for multiple quantum well transistor lasers

Taghavi

Kaatuzian

Leburton

2013

Semicond. Sci. Technol.

View full text Add to dashboard Cite

The gain spectra of single quantum well (SQW) heterojunction bipolar transistor laser (HBTL) is calculated with the gain coefficients and transparency carrier density as a function of the device structure factors by taking into account intraband relaxation. Inter-well coupling effects in a multiple quantum well (MQW) structure are considered as a correction factor in our approach. We introduce a six-order polynomial expression for a nonlinear carrier-dependent gain of MQW-HBTL considering ground, first excited and second excited states. We show that our gain model is notably more accurate than usual logarithmic equations, particularly in a large signal regime. Using computationally efficient numerical methods with a comprehensive rate-equation-based model, we obtain good agreement with experimental results for small signal, large signal and switching analysis of the SQW and MQW structures. We discuss the influence of different structure factors on the switching behaviour as well as on the optical bandwidth of the HBTL. Specifically, turn-on times (τ on ) of 160 and 540 ps are obtained for SQW and 4 QW structures, while τ on considerably decreases below 100 ps for 6 QWs due to competing effects between tunneling and thermionic emission followed by carrier diffusion over the barriers. Finally, τ on can be minimized independently of the QW number when a barrier width of ≈7 nm is used in the HBTL structure.

show abstract

“…3(a). The intraband relaxation lifetime was taken to vary as a function of carrier density and temperature [40]. Next, the gain spectra were obtained by transforming the spontaneous emission spectra using Einstein's relation.…”

Section: A Descriptionmentioning

confidence: 99%

Design and Simulation of Next-Generation High-Power, High-Brightness Laser Diodes

Lim

Sujecki

Lang

et al. 2009

IEEE J. Select. Topics Quantum Electron.

Self Cite

View full text Add to dashboard Cite

Abstract-High-brightness laser diode technology is progressing rapidly in response to competitive and evolving markets. The large volume resonators required for high-power, high-brightness operation makes their beam parameters and brightness sensitive to thermal-and carrier-induced lensing and also to multimode operation. Power and beam quality are no longer the only concerns for the design of high-brightness lasers. The increased demand for these technologies is accompanied by new performance requirements, including a wider range of wavelengths, direct electrical modulation, spectral purity and stability, and phase-locking techniques for coherent beam combining. This paper explores some of the next-generation technologies being pursued, while illustrating the growing importance of simulation and design tools. The paper begins by investigating the brightness limitations of broadarea laser diodes, including the use of asymmetric feedback to improve the modal discrimination. Next, tapered lasers are considered, with an emphasis on emerging device technologies for applications requiring electrical modulation and high spectral brightness.

show abstract

Thermal performance investigation of DQW GaInNAs laser diodes

Cited by 6 publications

References 7 publications

Static and dynamic performance optimisation of a 1.3 μm GaInNAs ridge waveguide laser

Static and dynamic performance optimisation of a 1.3 μm GaInNAs ridge waveguide laser

A nonlinear gain model for multiple quantum well transistor lasers

Design and Simulation of Next-Generation High-Power, High-Brightness Laser Diodes

Contact Info

Product

Resources

About