2018
DOI: 10.1002/mop.31155
|View full text |Cite
|
Sign up to set email alerts
|

30–512 MHz power amplifier design using GaN transistor

Abstract: In this article a class AB single‐ended power amplifier with 30‐512 MHz frequency band and 100 W saturated output power has been designed and implemented using a GaN transistor. The measured compressed gain is 19 ± 1 dB, the average PAE is 61% and the return loss is always better than −7.5 dB.

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
1
1

Citation Types

0
2
0

Year Published

2020
2020
2023
2023

Publication Types

Select...
3
2

Relationship

1
4

Authors

Journals

citations
Cited by 5 publications
(2 citation statements)
references
References 12 publications
0
2
0
Order By: Relevance
“…The Gallium Nitride (GaN) technology shows attractive features due to its high breakdown voltage, high temperature stability, and high power density [21,22]. Moreover, the swing of a GaN device output voltage is mostly limited by its ohmic region rather than its gate-drain breakdown.…”
Section: Active Device Technologymentioning
confidence: 99%
“…The Gallium Nitride (GaN) technology shows attractive features due to its high breakdown voltage, high temperature stability, and high power density [21,22]. Moreover, the swing of a GaN device output voltage is mostly limited by its ohmic region rather than its gate-drain breakdown.…”
Section: Active Device Technologymentioning
confidence: 99%
“…Therefore, the upcoming RF transmitter architecture must offer wide bandwidth with operating range, even extending to multi-octave frequencies. In addition, the tactical radios operating in VHF/UHF band also require multi-octave RF transmitters [2]- [5]. The key problem in such multi-octave transmitters is to handle harmonics generated within the band of operation.…”
Section: Introductionmentioning
confidence: 99%