S Band Hybrid Power Amplifier in GaN Technology with Input/Output Multi Harmonic Tuned Terminations

Ghisotti, Sandro; Pisa, Stefano; Colantonio, Paolo

doi:10.3390/electronics10182318

Cited by 9 publications

(6 citation statements)

References 30 publications

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“…The IMDs are occurred due to the amplifier nonlinearities. Phase distortion is a suitable specification for considering this effect [46]. Herein, Figure 13 presents the phase distortion before and after modeling at various frequencies.…”

Section: Simulation Results Of the Optimized System With A Combinatio...mentioning

confidence: 99%

Directly Matching an MMIC Amplifier Integrated with MIMO Antenna through DNNs for Future Networks

Kouhalvandi

2022

Sensors

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Due to the exponential growth of data communications, linearity specification is deteriorating and, in high frequency systems, impedance transformation leading to power delivering from power amplifiers (PAs) to antennas is becoming an increasingly important concept. Intelligent-based optimization methods can be a suitable solution for enhancing this characteristic in the transceiver systems. Herein, to tackle the problems of linearity and impedance transformations, deep neural network (DNN)-based optimizations are employed. In the first phase, the antenna is modeled through the DNN with using the long short-term memory (LSTM) leading to forecast the load impedances in the a wide frequency band. Afterwards, the PA is modeled and optimized through another LSTM-based DNN using Multivariate Newton’s Method where the optimal drain impedances are predicted from the first DNN (i.e., modeled antenna). The whole optimization methodology is executed automatically leading to enhance linearity specification of the whole system. For proving the novelty of the proposed method, monolithic microwave integrated circuit (MMIC) along with the multiple-input multiple-output (MIMO) antenna is designed, modeled, and optimized concurrently in the frequency band from 7.49 GHz to 12.44 GHz. The proposed method leads to enhancing the linearity of the transceiver in an effective way where DNN-based PA model gives rise to a solution for achieving the most optimal drain impedance through the modeled DNN-based antenna.

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Section: Simulation Results Of the Optimized System With A Combinatio...mentioning

confidence: 99%

Directly Matching an MMIC Amplifier Integrated with MIMO Antenna through DNNs for Future Networks

Kouhalvandi

2022

Sensors

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“…Additionally, in the case of passive Device Under Test (DUT) on GaN, capable of high-power handling, very high input power levels are required to drive the device into its non-linear region. Most literature has focused on AM/AM and AM/PM characterization of power amplifiers (PAs), as discussed in [28,29,[31][32][33][34][35][36][37][38]. However, only a few articles deal with AM/AM characterization, and even fewer deal with AM/PM characterization of passive circuits.…”

Section: Introductionmentioning

confidence: 99%

AM/AM and AM/PM Characterization of a GaN Phase and Amplitude Setting Circuit

Colangeli,

Das,

Longhi

et al. 2023

Electronics

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This contribution presents the AM/AM and AM/PM characteristics of a 6-bit Phase and Amplitude Setting Circuit realized in Gallium Nitride technology and operating at the Ku band. A test bench, based on three vector receivers and an absolute power reference, has been purposely devised to capture the deviation with respect to the linear behavior (known by the S-parameters) for both the magnitude and the phase of the vector response. The complete 64-state constellation is reported up to a 37 dBm of input power level, at which the effects of the static AM/AM and AM/PM distortion become evident, with about 3 dB of gain compression and 2.7 deg of phase conversion. The key figure of merit of the proposed test bench is the capability of operating with very high driving power levels (potentially up to 41 dBm), with possible applications in phased arrays, AESAs, and other signal conditioning systems.

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“…The use of discrete GaN HEMT components can achieve high performance and cost effectiveness [7][8][9]. However, for size-sensitive microcells, monolithic microwave integrated circuits (MMICs) and quasi-MMIC PAs are preferred.…”

Section: Introductionmentioning

confidence: 99%

High-Efficiency and Cost-Effective 10 W Broadband Continuous Class-J Mode Quasi-MMIC Power Amplifier Design Utilizing 0.25 μm GaN/SiC and GaAs IPD Technology for 5G NR n77 and n78 Bands

Chiou,

Lin,

Chang

2023

Electronics

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This paper presents two power amplifiers designed for 5G NR n77 and n78 bands. These power amplifiers were fabricated using WINTM Semiconductors’ 0.25 μm GaN/SiC technology and GaAs IPD technology. To achieve a reduction in costs, GaAs IPD technology was incorporated in the design, leading to the realization of a quasi-monolithic microwave integrated circuit design. To ensure high power, high efficiency, and broadband operation, a continuous Class-J mode output matching network was utilized. The power amplifier with split chip-on-board wire-bond assembly had a power gain of 21.7 dB, a 3 dB power bandwidth ranging from 2.85 GHz to 4.48 GHz, a saturation power of 40.3 dBm, and a peak power-added efficiency of 39.5%. On the other hand, the power amplifier with stack chip-on-board wire-bond assembly had a power gain of 21.7 dB, a 3 dB power bandwidth ranging from 2.84 GHz to 4.47 GHz, a saturation power of 40 dBm, and a peak power-added efficiency of 36.5%. For a 5G NR FR1 256-QAM 100-MHz bandwidth modulated signal with a frequency range of 3.3 GHz to 4.2 GHz, both the split and stack chip-on-board wire-bond assembly power amplifiers achieved average output powers of 29.6 dBm and 28.3 dBm, respectively. These output powers were measured under an error vector magnitude requirement of 3.5%.

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S Band Hybrid Power Amplifier in GaN Technology with Input/Output Multi Harmonic Tuned Terminations

Cited by 9 publications

References 30 publications

Directly Matching an MMIC Amplifier Integrated with MIMO Antenna through DNNs for Future Networks

Directly Matching an MMIC Amplifier Integrated with MIMO Antenna through DNNs for Future Networks

AM/AM and AM/PM Characterization of a GaN Phase and Amplitude Setting Circuit

High-Efficiency and Cost-Effective 10 W Broadband Continuous Class-J Mode Quasi-MMIC Power Amplifier Design Utilizing 0.25 μm GaN/SiC and GaAs IPD Technology for 5G NR n77 and n78 Bands

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