30GHz Amplifiers with 0.25¿m SiGe BiCMOS

Abstract

In this paper the possibility of using a low cost SiGe:C BiCMOS technology dedicated to few GHz applications up to 30GHz is discussed. Spiral inductors with SRF higher than 30GHz, are not available at the foundry library. Accordingly, inductors with a SRF higher than 45GHz were obtained, however their Q is only 5 at 30GHz. The test and modeling technique is presented. The design, implementation and test of a two stages common emitter amplifier without inductors are also presented. It has a 8dB gain at 28GHz and 1 dB bandwidth from 5 to 10GHz with a maximum gain of 23dB (best frequency range for this technology). The return losses are better then 10dB from 10 to 35GHz.