312-fs pulse generation from a passive C-band InAs/InP quantum dot mode-locked laser

Lü, Zhenguo; Liu, J. R.; Raymond, S.; Poole, Philip J.; Barrios, Pedro; Poitras, Daniel

doi:10.1364/oe.16.010835

Cited by 128 publications

(37 citation statements)

References 11 publications

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“…An important feature of SS-MLLs is that flattop power spectra are usually obtained, facilitating their use for WDM communication systems for which a minimum optical power level per channel has to be guaranteed. Mode locking in SS-MLLs is generally assumed to occur via third-order nonlinear effects [7,8,54,55], and can, e.g., also be seen in frequency combs generated via nonlinear effects in microcavities in which octave-spanning spectra have been demonstrated [56]. In SS-MLLs, compensation of the linear dispersion is attributed to counteracting nonlinear dispersion arising from the gain medium and results in the phase offset of comb lines evolving with a parabolic dependency as a function of comb line wavelength [7,8,57].…”

Section: Single Section Mode-locked Lasersmentioning

confidence: 99%

Silicon photonics WDM transmitter with single section semiconductor mode-locked laser

Müller

Hauck

Shen

et al. 2015

Advanced Optical Technologies

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Abstract:We demonstrate a wavelength domain-multiplexed (WDM) optical link relying on a single section semiconductor mode-locked laser (SS-MLL) with quantum dash (Q-Dash) gain material to generate 25 optical carriers spaced by 60.8 GHz, as well as silicon photonics (SiP) resonant ring modulators (RRMs) to modulate individual optical channels. The link requires optical reamplification provided by an erbium-doped fiber amplifier (EDFA) in the system experiments reported here. Open eye diagrams with signal quality factors (Q-factors) above 7 are measured with a commercial receiver (Rx). For higher compactness and cost effectiveness, reamplification of the modulated channels with a semiconductor optical amplifier (SOA) operated in the linear regime is highly desirable. System and device characterization indicate compatibility with the latter. While we expect channel counts to be primarily limited by the saturation output power level of the SOA, we estimate a single SOA to support more than eight channels. Prior to describing the system experiments, component design and detailed characterization results are reported including design and characterization of RRMs, ring-based resonant optical add-drop multiplexers (RROADMs) and thermal tuners, S-parameters resulting from the interoperation of RRMs and RR-OADMs, and characterization of Q-Dash SS-MLLs reamplified with a commercial SOA. Particular emphasis is placed on peaking effects in the transfer functions of RRMs and RR-OADMs resulting from transient effects in the optical domain, as well as on the characterization of SS-MLLs in regard to relative intensity noise (RIN), stability of the modes of operation, and excess noise after reamplification.

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Section: Single Section Mode-locked Lasersmentioning

confidence: 99%

Silicon photonics WDM transmitter with single section semiconductor mode-locked laser

Müller

Hauck

Shen

et al. 2015

Advanced Optical Technologies

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“…Due to the broadband gain [5] and fast carrier dynamics [6] of QDs, the resulting lasers are excellent candidates for mode-locking, capable of generating optical pulses with pulse durations down to 312 fs [7] and high repetition rates up to 346 GHz [8]. In order to scale the repetition rate up to the THz range using conventional cavity geometries, the length of the optical cavity must be shrunk to less than 50 μm.…”

Section: Introductionmentioning

confidence: 99%

THz optical pulses from a coupled-cavity quantum-dot laser

Liu

Lü

Poole

et al. 2012

Optics Communications

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Optical pulses are generated from a coupled-cavity quantum-dot (QD) laser consisting of a short QD-waveguide Fabry-Perot (F-P) cavity and three long external fiber Bragg grating (FBG) cavities. When the laser is biased at low operation current, the feedback from the external cavities dominates and laser pulses have a 1.01 THz repetition rate, determined by the equal frequency difference of the three FBGs. We are thus able to decouple the repetition rate of a mode-locked laser from the cavity length. With much higher bias current, the QD F-P cavity dominates and the repetition rate is switched to 43.8 GHz, defined by the length of the F-Pcavity.Crown

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“…The shortest pulses ever demonstrated from an on-chip laser diode came from quantum dot lasers showing 390 fs pulses at 1.31 µm 91 and 312 fs pulses at 1.55 µm. 92 Quantum dot lasers also show reduced amplified spontaneous emission relative to QWs which leads to reduced jitter in MLLs 93 and has allowed for error free transmission at 10 Gb/s from several comb lines in a heterogeneously integrated device. 94 Furthermore, there have been multiple reports of spontaneous mode locking without separate active or passive mode locking sections 95,96 in QD lasers with relatively short pulses (490 fs) and stable mode locking occurring in Fabry-Pérot cavities.…”

Section: Mode-locked Lasersmentioning

confidence: 99%

Perspective: The future of quantum dot photonic integrated circuits

et al. 2018

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Direct epitaxial integration of III-V materials on Si offers substantial manufacturing cost and scalability advantages over heterogeneous integration. The challenge is that epitaxial growth introduces high densities of crystalline defects that limit device performance and lifetime. Quantum dot lasers, amplifiers, modulators, and photodetectors epitaxially grown on Si are showing promise for achieving low-cost, scalable integration with silicon photonics. The unique electrical confinement properties of quantum dots provide reduced sensitivity to the crystalline defects that result from III-V/Si growth, while their unique gain dynamics show promise for improved performance and new functionalities relative to their quantum well counterparts in many devices. Clear advantages for using quantum dot active layers for lasers and amplifiers on and off Si have already been demonstrated, and results for quantum dot based photodetectors and modulators look promising. Laser performance on Si is improving rapidly with continuous-wave threshold currents below 1 mA, injection efficiencies of 87%, and output powers of 175 mW at 20 °C. 1500-h reliability tests at 35 °C showed an extrapolated mean-time-to-failure of more than ten million hours. This represents a significant stride toward efficient, scalable, and reliable III-V lasers on on-axis Si substrates for photonic integrate circuits that are fully compatible with complementary metal-oxide-semiconductor (CMOS) foundries.

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312-fs pulse generation from a passive C-band InAs/InP quantum dot mode-locked laser

Cited by 128 publications

References 11 publications

Silicon photonics WDM transmitter with single section semiconductor mode-locked laser

Silicon photonics WDM transmitter with single section semiconductor mode-locked laser

THz optical pulses from a coupled-cavity quantum-dot laser

Perspective: The future of quantum dot photonic integrated circuits

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