33.01% (31.06%)- Limiting Highest Efficiencies obtained in \\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\mathbf{n}^+(\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\mathbf{p}^+)-\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\mathbf{p}(\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\mathbf{n})\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\ Crystalline Silicon Junction Solar Cells at T=300 K, Due to The Effects of Heavy (Low)

Abstract

In our recent two works [1,2], by basing on: (1) the effects of heavy(light) doping and donor (acceptor), d(a), size , which affect the total carrier-minority saturation current density J oI(II) ≡being injected respectively into the heavily doped donor (acceptor)-Si emitter-lightly doped acceptor (donor)-Si base regions, HD[d(a)-Si]ER-LD[a(d)-Si]BR, of n + (p + ) − p(n) junction solar cells, respectively, (2) an effective Gaussian donordensity profile to determine J En(p)o , and (3) the use of two experimental points, we investigated the photovoltaic conversion factor n I(II) , short circuit current density J scI(II) , fill factor F I(II) , and finally efficiency η I(II) . Further, we obtained the highest maximal values of η I(II) ,