In our recent works [1,2], by basing on: (1) the effects of heavy(light) doping and donor (acceptor), d(a), size , which affect the total carrier-minority saturation current density J oI(II) ≡being injected respectively into the heavily doped donor (acceptor)-GaAs emitter-lightly doped acceptor (donor)-Si base regions, HD[d(a)-Si]ER-LD[a(d)-Si]BR, of n + (p + ) − p(n) junction solar cells, respectively, (2) an effective Gaussian donor-density profile to determine J En(p)o , and (3) the use of two experimental points, we investigated the photovoltaic conversion factor n I(II) , short circuit current density J scI(II) , fill factor F I(II) , and finally efficiency η I(II) . Then, the limiting highest efficiencies, 31% (30.65%), were obtained in n + (p + ) − p(n) junction solar cells at 300K.In the present work, by basing on such a treatment method, and using the physical conditions such as: W = 15 μm, N Sb(In) = 10 19 (10 20 ) cm −3 and S = 100 (cm/s ) , according to the highly transparent HD[Sb(In)-GaAs]ER, and then N In(Sb) = 10 18 (10 17 )cm −3 for LD[In(Sb)-

In the n + (p + ) − p(n) crystalline Si-junction solar cells, by basing on a same treatment method, and for a same heavy (low) doping effect, as those given in our recent paper (RP) [1], but using now a new expression, obtained for the relative dielectric constant ε r d a , determined exactly in the effective Bohr model, as that given in Eq. (1c), representing the donor (acceptor) d(a)-radius r d a − effect or the ε r d a − effect, suggesting further that, for an increasing r d a , ε r d a decreases, as showed in Table 1, according to the increase in photovoltaic efficiency η, as observed in Tables 2 and 3, we finally get in our present paper, for highest values of r d a , the new limiting highest efficiencies, η=28.68% (29.87%)< η RP = 31% (30.65%), being due to r d a [8] < r d a , , according to: ε r d a > ε RP (r d(a) ), ε RP (r d(a) ) being our inaccurate and simple formula, proposed in RP, and also reported in Eq. (1d), for a comparison. Finally, our new limiting highest efficiencies, η=28.68% (29.87%), can also be compared with other limiting η -results, such as: 29.43% [26],

In our recent two works [1,2], by basing on: (1) the effects of heavy(light) doping and donor (acceptor), d(a), size , which affect the total carrier-minority saturation current density J oI(II) ≡being injected respectively into the heavily doped donor (acceptor)-Si emitter-lightly doped acceptor (donor)-Si base regions, HD[d(a)-Si]ER-LD[a(d)-Si]BR, of n + (p + ) − p(n) junction solar cells, respectively, (2) an effective Gaussian donordensity profile to determine J En(p)o , and (3) the use of two experimental points, we investigated the photovoltaic conversion factor n I(II) , short circuit current density J scI(II) , fill factor F I(II) , and finally efficiency η I(II) . Further, we obtained the highest maximal values of η I(II) ,