2004
DOI: 10.1889/1.1821318
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33.1: Invited Paper: P‐type Low‐Power Low‐Temperature TFT‐LCDs

Abstract: We have developed small‐sized low‐temperature p‐Si TFT‐LCDs. Gate and data driving circuits have been integrated by p‐type LTPS TFTs. The driving scheme is similar to conventional CMOS driver circuits. Low power consumption has been achieved by integrating level shifters on glass substrates. The panels have high pixel density, compactness, and high picture performance and the power consumption is acceptable for commercial products.

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Cited by 14 publications
(14 citation statements)
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“…However, high voltage level-shifter from 5V to 10V was not reported yet. The previously reported p-type level-shifters [3,6,8] uses 10V input clocks. It means that the external high voltage (10V) level-shifter by high voltage IC process is required to p-type gate driver.…”
Section: Low Voltage Level-shiftermentioning
confidence: 99%
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“…However, high voltage level-shifter from 5V to 10V was not reported yet. The previously reported p-type level-shifters [3,6,8] uses 10V input clocks. It means that the external high voltage (10V) level-shifter by high voltage IC process is required to p-type gate driver.…”
Section: Low Voltage Level-shiftermentioning
confidence: 99%
“…Recently, low temperature poly-Si (LTPS) integration of the pixel elements and peripheral driver in the active matrix displays such as AMLCD and AMOLED has attracted a considerable attention [1]. P-type low temperature poly-Si TFT circuits are widely considered for panel integration because a PMOS process is less expensive than a CMOS process [2][3]. The p-type process reduces many process steps compared with CMOS process.…”
Section: Introductionmentioning
confidence: 99%
“…To integrate p-type low temperature poly-silicon (LTPS) driving circuits on glass has been paid more and more efforts in order to combine the merits of cost competitiveness of p-type processes and circuitry integration ability of LTPS technology [1][2][3][4][5].…”
Section: Introductionmentioning
confidence: 99%
“…On the other hand, one merit of LTPS thin film transistor (TFT) is the ability to integrate the peripheral circuits on the panel due to its high current driving capability [1] [2]. Therefore, some studies start to focus on P-type circuit integration try to merge these two merits [3]- [7]. However, to adopt P-type process will affect the integration degree of peripheral circuits because of the power consumption issue.…”
Section: Introductionmentioning
confidence: 99%
“…However, to adopt P-type process will affect the integration degree of peripheral circuits because of the power consumption issue. Otherwise, the additional clock signals in different phases [3] [5] or redundant voltage source [4] has to be provided from the system to suppress the steady current. However, the fore-mentioned methods will increase the design complexity and power consumption of the external IC, which will limit the application of P-type panels in mobile field.…”
Section: Introductionmentioning
confidence: 99%