35 nm mHEMT Technology for THz and ultra low noise applications

Leuther, A.; Tessmann, A.; Dammann, M.; Maßler, H.; Schlechtweg, M.; Ambacher, O.

doi:10.1109/iciprm.2013.6562647

Cited by 63 publications

(22 citation statements)

References 4 publications

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“…The chip set is realized in a GaAs-based 35 nm mHEMT technology and associated MMIC process [11]. The transistors achieve cutoff frequencies f T and f max of more than 500 GHz and 1000 GHz, respectively.…”

Section: Introductionmentioning

confidence: 99%

Towards MMIC-Based 300GHz Indoor Wireless Communication Systems

Kallfass

Dan

Rey

et al. 2015

IEICE Trans. Electron.

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125

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SUMMARYThis contribution presents a full MMIC chip set, transmit and receive RF frontend and data transmission experiments at a carrier frequency of 300 GHz and with data rates of up to 64 Gbit/s. The radio is dedicated to future high data rate indoor wireless communication, serving application scenarios such as smart offices, data centers and home theaters. The paper reviews the underlying high speed transistor and MMIC process, the performance of the quadrature transmitter and receiver, as well as the local oscillator generation by means of frequency multiplication. Initial transmission experiments in a single-input single-output setup and zero-IF transmit and receive scheme achieve up to 64 Gbit/s data rates with QPSK modulation. The paper discusses the current performance limitations of the RF frontend and will outline paths for improvements in view of achieving 100 Gbit/s capability.

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Section: Introductionmentioning

confidence: 99%

Towards MMIC-Based 300GHz Indoor Wireless Communication Systems

Kallfass

Dan

Rey

et al. 2015

IEICE Trans. Electron.

Self Cite

125

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“…The RF frontend proposed by [18], operates at 300 GHz and is able to transfer up to 64 Gbps using QPSK modulation on a distance of 1 m. The chipset is expected to operate at higher data rates or longer distances as well, but the setup is limited by practical constraints of employed instruments [18]. The design uses horn antennas with 24.2 dBi gain and the chip is realized in 35 nm GaAs mHEMT technology [19] with f T and f max of more than 500 and 1000 GHz, respectively [18], [19].…”

Section: A 300 Ghz Rf Frontendmentioning

confidence: 99%

Data Link Layer Processor for 100 Gbps Terahertz Wireless Communications in 28 nm CMOS Technology

et al. 2019

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In this paper, we show our 165 Gbps data link layer processor for wireless communication in the terahertz band. The design utilizes interleaved Reed-Solomon codes with dedicated link adaptation, fragmentation, aggregation, and hybrid-automatic-repeat-request. The main advantage is the low-chip area required to fabricate the processor, which is at least two times lower than the area of low-density paritycheck decoders. Surprisingly, our solution loses only ∼1 dB gain when compared to high-speed low-density parity-check decoders. Moreover, with only 2.38 pJ/bit of energy consumption at 0.8 V, one of the best results in the class of comparable implementations has been achieved. Alongside, we show our vision of a complete 100 Gbps wireless transceiver, including radio frequency frontend and baseband processing. For the baseband realization, we propose a parallel sequence spread spectrum and channel combining at the baseband level. Challenges to high-speed wireless transmission at the terahertz band are addressed as well. To the authors' best knowledge, it is one of the first data link layer implementations that deal with a data rate of ≥ 100 Gbps. INDEX TERMS 100 Gbps wireless, terahertz communication, Reed-Solomon coding, data link layer. The associate editor coordinating the review of this manuscript and approving it for publication was Khursheed Aurangzeb. FIGURE 1. Discussed wireless radio-transceiver system. and baseband implementations. Fig. 1 depicts the architecture of the discussed wireless radio-transceiver. A. CHALLENGES TO HIGH-SPEED WIRELESS COMMUNICATIONS Ultra-high speed wireless systems require either very high bandwidth or very high bandwidth efficiency. In cellular architectures like LTE or 5G high bandwidth efficiency is in the focus. This is due to the limited bandwidth in the available radio bands. Increasing the bandwidth efficiency requires a corresponding increase in signal processing power

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“…The technology is based on a 50 nm or 35 nm gate-length InAlAs/InGaAs mHEMT [9]. A metamorphic buffer is used for a lattice-matched growth of the HEMT layers on 100 µm semi-insulating GaAs wafers.…”

Section: Iaf Fraunhofer Institute For Applied Solid State Physicsmentioning

confidence: 99%

Technologies, Design, and Applications of Low-Noise Amplifiers at Millimetre-Wave: State-of-the-Art and Perspectives

et al. 2019

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An overview of applicable technologies and design solutions for monolithic microwave integrated circuit (MMIC) low-noise amplifiers (LNAs) operating at millimeter-wave are provided in this paper. The review starts with a brief description of the targeted applications and corresponding systems. Advanced technologies are presented highlighting potentials and drawbacks related to the considered possibilities. Design techniques, applicable to different requirements, are presented and analyzed. An LNA operating at V-band (59-66 GHz) is designed and tested following the presented guidelines, demonstrating state-of-the-art results in terms of noise figure (average NF < 2 dB). A state-of-the-art table, reporting recent results available in open literature on this topic, is provided and examined, focusing on room temperature operation and performance in cryogenic environment. Finally, trends versus frequency and perspectives are outlined.2 of 18 performance at least up to 300 GHz. Few technologies are capable of fulfilling such requirement and even less are industrial-grade ones. Most are available in research labs, and some, typically the ones originating in the USA, may be subject to export restriction or end user certification.Current state-of-the-art mmw-LNA are realized either in indium phosphide (InP) high electron mobility transistor (HEMT) or gallium arsenide (GaAs) metamorphic HEMT (mHEMT) with gate lengths shorter than 100 nm. The latter parameter represents, nowadays, a "threshold" value for millimeter-wave operation. In fact, the great majority of mmw-LNAs analyzed in this review are realized featuring a gate length equal or shorter than 100 nm.HEMT is in hetero-structure transistor where a two-dimensional electron gas (2DEG) is created at the interface of two different contacting material due to their different energy bandgaps. Such 2DEG present very high electron saturation velocity and is well suited for high-frequency and low-noise applications.In the following, the main features of each technology and how each one can be gainfully employed to achieve low-noise performance are briefly described. Akgiray et al. provide a recent and detailed analysis of technologies for ultra-low-noise applications for operation at millimeter-wave and the relative transistor noise model in [3]. Indium PhosphideInP HEMT transistors have long been the semiconductor of choice for extremely low-noise amplifiers operating in RF, microwave, and millimeter-wave bands due to their superior noise and gain performance up to 300 GHz and even above. Significantly developed in the 1990s, InP HEMT monolithic microwave integrated circuits (MMICs) can be found in both defense applications (such as secure communications) and scientific applications, which typically consist of some form of very high-frequency radiometry, capable of detecting the vanishing small signals travelling from outer space. On the other hand, among all semiconductors, InP experiences slow development due to its niche market and, consequently, tends to be one of the mos...

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35 nm mHEMT Technology for THz and ultra low noise applications

Cited by 63 publications

References 4 publications

Towards MMIC-Based 300GHz Indoor Wireless Communication Systems

Towards MMIC-Based 300GHz Indoor Wireless Communication Systems

Data Link Layer Processor for 100 Gbps Terahertz Wireless Communications in 28 nm CMOS Technology

Technologies, Design, and Applications of Low-Noise Amplifiers at Millimetre-Wave: State-of-the-Art and Perspectives

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