In communications, the frequency range 0.1-30 THz is essentially terra incognita. Recently, research has focused on this terahertz gap, because the high carrier frequencies promise unprecedented channel capacities. Indeed, data rates of 100 Gbit s(-1) were predicted for 2015. Here, we present, for the first time, a single-input and single-output wireless communication system at 237.5 GHz for transmitting data over 20 m at a data rate of 100 Gbit s(-1). This breakthrough results from combining terahertz photonics and electronics, whereby a narrow-band terahertz carrier is photonically generated by mixing comb lines of a mode-locked laser in a uni-travellingcarrier photodiode. The uni-travelling-carrier photodiode output is then radiated over a beam-focusing antenna. The signal is received by a millimetre-wave monolithic integrated circuit comprising novel terahertz mixers and amplifiers. We believe that this approach provides a path to scale wireless communications to Tbit s(-1) rates over distances of >1 km

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A metamorphic HEMT (MHEMT) MMIC technology including circuit applications is presented. The MHEMT layers are MBE grown on 4-inch GaAs wafers. The technology is based on a 50 nm gate length MHEMT and includes a 50 pm substrate backside process with dry etched through-substrate vias. For the electron confinement an InO8GaO2As/lnO53Ga047As composite channel was used. The devices are passivated with BCB and SiN to achieve a median time-to-failure of 2.7 x 1 06 h in air.Cut-off frequencies f, and fmax of 375 GHz were extrapolated for a 2 x 15 pm gate width device.Low-noise amplifiers with more than 1 5 dB gain in the frequency range from 192 GHz to 235 GHz were realized.