50 nm MHEMT Technology for G- and H-Band MMICs

Leuther, A.; Tessmann, A.; Dammann, M.; Schworer, C.; Schlechtweg, M.; Mikulla, M.; Lösch, R.; Weimann, G.

doi:10.1109/iciprm.2007.380680

Cited by 57 publications

(27 citation statements)

References 3 publications

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“…The results presented in this paper are based on mHEMT technologies with 50 nm and 100 nm gate length developed at the IAF [1,2]. The mHEMT layers are grown on 4" semiinsulating GaAs wafers by molecular beam epitaxy (MBE).…”

Section: Technologymentioning

confidence: 99%

Metamorphic HEMT technology for low-noise applications

Leuther

Tessmann

Kallfass

et al. 2009

2009 IEEE International Conference on Indium Phosphide &Amp; Related Materials

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Different noise sources in HEMTs are discussed, and state-of-the-art low-noise amplifiers based on the Fraunhofer IAF 100 nm and 50 nm gate length metamorphic HEMT (mHEMT) process are presented. These mHEMT technology feature an extrinsic fT of 220 / 375 GHz and an extrinsic transconduction gm, max of 1300 / 1800 mS/mm. By using the 50 nm technology several low-noise amplifier MMICs were realized. A small signal gain of 21 dB and a noise figure of 1.9 dB was measured in the frequency range between 80 and 100 GHz at ambient temperature. To investigate the low temperature behaviour of the 100 nm technology, single 4 * 40 ?m mHEMTs were integrated in hybrid 4 - 8 GHz (Chalmers) and 16 - 26 GHz (Yebes) amplifiers. At cryogenic temperatures noise temperatures of 3 K at 5 GHz and 12 K at 22 GHz were achieved

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Section: Technologymentioning

confidence: 99%

Metamorphic HEMT technology for low-noise applications

Leuther

Tessmann

Kallfass

et al. 2009

2009 IEEE International Conference on Indium Phosphide &Amp; Related Materials

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“…In recent years, there has been an increasing demand for MMICs beyond 100 GHz [1,2]. Due to the excellent high frequency and low noise performance, InP-based PHEMT is considered to be a unique candidate for applications beyond 100 GHz.…”

Section: Introductionmentioning

confidence: 99%

“…Due to the excellent high frequency and low noise performance, InP-based PHEMT is considered to be a unique candidate for applications beyond 100 GHz. Many high performance InP-based PHEMTs have been reported [1,2,3,4,5].…”

Section: Introductionmentioning

confidence: 99%

Realization of 70-nm T-gate InP-based PHEMT for MMW low noise applications

Wang

et al. 2015

IEICE Electron. Express

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70-nm T-gate InP-based low noise In 0.52 Al 0.48 As/In 0.65 Ga 0.35 As pseudomorphic high electron mobility transistor (PHEMT) with well-balanced cutoff frequency f t and maximum oscillation frequency f max were designed and fabricated. DC, RF, and noise characterizations are demonstrated. The maximum saturation current density I dss and maximum extrinsic transconductance g m,max are measured to be 894 mA/mm and 1640 mS/mm, respectively. And the extrapolated f t and f max based on inflection point were 247 GHz and 392 GHz, respectively. Due to the disadvantages of traditionally used Y-factor method, the new cold-source method was adopted to measure the noise parameters. The minimum noise figure (NF min ) is 1 dB at 30 GHz associated with a gain of 15 dB at V ds of 0.8 V and I ds of 17 mA. These excellent results make this InP-based PHEMT one of the most suitable devices for millimeter wave low noise applications.

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“…They are of great interest for high-resolution imaging, environmental sensor, security detection, broadband satellite communication applications [3]. InP-based PHEMTs have shown more excellent performance of high-gain, wide-band, and low noise than the GaAs-based beyond 100 GHz, thus MMICs based on InP PHEMTs have been reported over the world [1,3,4,5,6,7,8].…”

Section: Introductionmentioning

confidence: 99%

“…In recent years, there has been an increasing demand for MMICs beyond 100 GHz [1,2]. They are of great interest for high-resolution imaging, environmental sensor, security detection, broadband satellite communication applications [3].…”

Section: Introductionmentioning

confidence: 99%

A novel large-signal model for InP MMIC applications at 110 GHz

Wang

Luo

Zhuo-Bin

et al. 2015

IEICE Electron. Express

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This paper presented the development of a novel large-signal equivalent circuit model for InP-based pseudomorphic high electron mobility transistor (PHEMT) MMIC applications beyond 100 GHz. A new set of I-V functions was built in the large-signal model to depict accurately the measured I-V results of this device. The convergence of the model was good during the HB (harmonic balance) simulation. To verify the feasibility of the large-signal model, a 110 GHz MMIC amplifier based on this large-signal model was designed and fabricated, the on-wafer measured large-signal results, which include Pout, Gain and PAE (Power Add Efficiency), were consistent with the simulated ones at 110 GHz. Thus, this new large-signal model has a great potential for InP MMIC applications beyond 100 GHz.

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50 nm MHEMT Technology for G- and H-Band MMICs

Cited by 57 publications

References 3 publications

Metamorphic HEMT technology for low-noise applications

Metamorphic HEMT technology for low-noise applications

Realization of 70-nm T-gate InP-based PHEMT for MMW low noise applications

A novel large-signal model for InP MMIC applications at 110 GHz

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