360 GHz f<sub>MAX</sub> Graded-Channel AlGaN/GaN HEMTs for mmW Low-Noise Applications

Moon, Junghwan; Wong, Joel; Grabar, Bob; Antcliffe, M.; Chen, Peter; Arkun, Erdem; Khalaf, Isaac; Corrion, A.; Chappell, James M.; Venkatesan, Nivedhita; Fay, Patrick

doi:10.1109/led.2020.3005337

Cited by 58 publications

(16 citation statements)

References 20 publications

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“…Fang et al [110] proposed an AlGaN/GaN HEMT with a step-graded layer that exhibits better linearity due to the individual optimization for each layer. Sohel et al [111] reported an AlGaN/GaN HEMT with composite 2D and 3D electron channel (see Fig. 19(a)).…”

Section: Graded Channelmentioning

confidence: 99%

A review on GaN HEMTs: nonlinear mechanisms and improvement methods

Du,

Ye,

Cai

et al. 2023

J. Semicond.

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The GaN HEMT is a potential candidate for RF applications due to the high frequency and large power handling capability. To ensure the quality of the communication signal, linearity is a key parameter during the system design. However, the GaN HEMT usually suffers from the nonlinearity problems induced by the nonlinear parasitic capacitance, transconductance, channel transconductance etc. Among them, the transconductance reduction is the main contributor for the nonlinearity and is mostly attributed to the scattering effect, the increasing resistance of access region, the self-heating effect and the trapping effects. Based on the mechanisms, device-level improvement methods of transconductance including the trapping suppression, the nanowire channel, the graded channel, the double channel, the transconductance compensation and the new material structures have been proposed recently. The features of each method are reviewed and compared to provide an overview perspective on the linearity of the GaN HEMT at the device level.

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Section: Graded Channelmentioning

confidence: 99%

A review on GaN HEMTs: nonlinear mechanisms and improvement methods

Du,

Ye,

Cai

et al. 2023

J. Semicond.

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“…Furthermore, piezoelectric and spontaneous polarization effects within AlGaN/GaN heterojunction induce a high two-dimensional electron gas (2DEG) density, which brings in the extra benefits of high electron mobility and saturation velocity. Due to integrating the excellent features of GaN material and 2DEG, a high electron mobility transistor (HEMT) attracts more attention on high-power and high-frequency applications [3]- [5]. As the large-scale deployment of the fifth generation (5G) mobile communication, sub-6GHz and millimeter wave (mmWave) frequency ranges are introduced to allocate wider bandwidth.…”

Section: Introductionmentioning

confidence: 99%

An Overview on Analyses and Suppression Methods of Trapping Effects in AlGaN/GaN HEMTs

et al. 2022

IEEE Access

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Due to the excellent material characteristics, AlGaN/GaN HEMTs are widely used in high power and high frequency applications. However, the existence of damages, defects and dislocations still degrade the device features because of trapping effects. In this paper, investigations of trapping effects are summarized and discussed to understand the inner mechanism, including the gate-lag and drain-lag transient responses, the current collapse of pulsed I DS -V DS , the dependence of frequency dispersion, the transient current reduction with pulsed-RF excitation and the kink effect. In addition, recent methods of suppressing trapping effects are reviewed, including surface passivation, GaN cap layer, gate/source field plate, buffer engineering and structure modification. The profits and shortages of each method are compared and discussed.INDEX TERMS GaN HEMT, trapping effects, current collapse, suppression methods.

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“…Recently, different techniques have been proposed in the literature for attaining low NF for the GaN HEMT. Graded channel AlGaN/GaN HEMT is reported in [7] to improve its NF as compared to the conventional AlGaN/GaN HEMT. A 50-nm T-gate graded channel HEMT is used to achieve a NF of 0.5 dB at 30 GHz.…”

Section: Introductionmentioning

confidence: 99%

Impact of AlGaN Barrier Thickness and Substrate Material on the Noise Characteristics of GaN HEMT

Jarndal

Arivazhagan

Almajali

et al. 2022

IEEE J. Electron Devices Soc.

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In this paper, the impact of AlGaN barrier thickness (tAlGaN) and substrate leakage on the noise conductance and noise figure in GaN High Electron Mobility Transistor (HEMT) is investigated. The investigation and analysis in this paper are targeting the Low Noise Amplifier (LNA) applications. The noise analysis is carried out using Technology Computer-Aided Design (TCAD) physical simulator. Initially, the DC, RF, and noise simulations are validated against measurements of a GaN device. AlGaN barrier thickness (tAlGaN) is varied and its impact on the minimum noise figure (NFmin) is analyzed. It is observed that the NFmin decreases with tAlGaN reduction at the typical bias conditions of LNA. This observation on the impact of tAlGaN on the NFmin follows Fukui's model, which states that the NFmin decreases with the increase in transconductance. In addition, the impact of the substrate material on noise performance is analyzed. The substrates used for the investigation are Silicon (Si) and Silicon Carbide (SiC). At 40 GHz, it is found that the noise conductance and the NFmin of GaN HEMT on SiC substrate is reduced by 13% and 12%, respectively, in comparison with GaN HEMT on Si substrate. This could be attributed to the lower gate-tosubstrate capacitance of the GaN HEMT on SiC substrate.

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360 GHz f_MAX Graded-Channel AlGaN/GaN HEMTs for mmW Low-Noise Applications

Cited by 58 publications

References 20 publications

A review on GaN HEMTs: nonlinear mechanisms and improvement methods

A review on GaN HEMTs: nonlinear mechanisms and improvement methods

An Overview on Analyses and Suppression Methods of Trapping Effects in AlGaN/GaN HEMTs

Impact of AlGaN Barrier Thickness and Substrate Material on the Noise Characteristics of GaN HEMT

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360 GHz fMAX Graded-Channel AlGaN/GaN HEMTs for mmW Low-Noise Applications

Cited by 58 publications

References 20 publications

A review on GaN HEMTs: nonlinear mechanisms and improvement methods

A review on GaN HEMTs: nonlinear mechanisms and improvement methods

An Overview on Analyses and Suppression Methods of Trapping Effects in AlGaN/GaN HEMTs

Impact of AlGaN Barrier Thickness and Substrate Material on the Noise Characteristics of GaN HEMT

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360 GHz f_MAX Graded-Channel AlGaN/GaN HEMTs for mmW Low-Noise Applications