375-GHz-bandwidth photoconductive detector

Chen, Yi; Williamson, S.; Brock, T.; Smith, F. W.; Calawa, A. R.

doi:10.1063/1.106157

Cited by 142 publications

(42 citation statements)

References 11 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…9 The use of new light absorbing materials and improved fabrication methods has resulted in photodetectors with electrical bandwidths approaching 1 THz. [10][11][12] Devices with 60 GHz bandwidths and high quantum efficiencies at visible and near infrared wavelengths ͑400-1700 nm͒ are now available commercially. 13,14 Of equal importance, since these detectors contain little or no built-in amplification, has been the development of solid state microwave ͑1-90 GHz͒ amplifiers with excess noise comparable to or less than room temperature thermal noise.…”

Section: Introductionmentioning

confidence: 99%

The design and sensitivity of microwave frequency optical heterodyne receivers

Bingham

Börger

Suter

et al. 1998

Review of Scientific Instruments

View full text Add to dashboard Cite

Recent advances in high speed photodetector and microwave receiver technology make microwave frequency optical heterodyning an attractive approach for the detection of a number of coherent Raman and Brillouin scattering experiments. We have therefore analyzed the sensitivity of microwave frequency optical heterodyne receivers. Experimental tests on a visible wavelength receiver operating at 13.5 GHz confirm the expectation of shot noise limited sensitivity. The relative merits of microwave frequency optical heterodyne detection and the alternative FabryPérot interferometry approach are discussed.

show abstract

Section: Introductionmentioning

confidence: 99%

The design and sensitivity of microwave frequency optical heterodyne receivers

Bingham

Börger

Suter

et al. 1998

Review of Scientific Instruments

View full text Add to dashboard Cite

show abstract

“…As with the simple detector gaps, it is defined between two coplanar metal lines. With an incident optical energy of 0.04 pJ pulse-~, this LT-GaAs detector has demonstrated a 3 dB bandwidth of 375 GHz with a responsivity of 0.1 A W-~, making it the fastest high-sensitivity detector reported [29]. The dark current at a 1 V bias is 100 pA, and for a higher optical fluence of 22 pJ pulse-~ the on-state resistance of the detector is as low as 30 ~2…”

Section: Lt-gaas Photodetectors and Photoswitchesmentioning

confidence: 89%

Optoelectronic applications of LTMBE III–V materials

Whitaker

1993

Materials Science and Engineering: B

View full text Add to dashboard Cite

A review of the application of semiconductor layers grown at low substrate temperatures to ultrafast optoelectronics is presented. The films, grown by molecular beam epitaxy primarily around 200 °C and subsequently annealed, are demonstrated to have high resistivity, high mobility, an ultrashort carrier lifetime, and a high dielectric breakdown. This combination of properties makes the low-temperature-grown materials perfectly suited for use in high-speed optoelectronic devices. A number of issues which influence the application of these materials, such as growth temperature, use of an annealing process, layer thickness, and optical wavelength, are considered. Examples of low-temperature-grown semiconductor optoelectronic devices, including ultra-high-bandwidth photoconductive detectors, high-sensitivity, highbandwidth MSM photodetectors, and optical temporal analyzers are demonstrated. While the discussion concentrates on low-temperature-grown GaAs, the lattice-mismatched ternary compound InxGa ~ _xAs/GaAs is also considered in the context of detection of the longer wavelengths used in optical communications.

show abstract

“…This contains both terahertz (ac) and Joule heating (dc) components (7) The mean power of the terahertz component may be found by disregarding the constant offset and averaging the sinusoidal terms, to give an expression consistent with that derived by Brown et al [15] (8) The Joule heating may be found by solving (2) for the steady state solution (using a constant, time averaged value of ). Thus the energy dissipated in the photoconductor resistance is given by (9) In practice, the applied bias is governed by the current threshold at which the power dissipated as heat in (9) causes damage to the device. Thus, back substituting from (9) for the bias in (8) gives the maximum emitted terahertz power at the dc power limit for the photoconductor.…”

Section: Photomixing Mechanismmentioning

confidence: 99%